NGB8245N
Ignition IGBT
20 A, 450 V, N−Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
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•
•
•
•
•
•
•
•
Ideal for Coil−on−Plug and Driver−on−Coil Applications
D
2
PAK Package Offers Smaller Footprint for Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
This is a Pb−Free Device
20 A, 450 V
V
CE(on)
3
1.24 V @
I
C
= 15 A, V
GE
.
4.0 V
C
G
RG
R
GE
E
Applications
•
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C
−
Pulsed
Continuous Gate Current
Transient Gate Current
(t
≤
2 ms, f
≤
100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500
W,
C = 100 pF
ESD (Machine Model) R = 0
W,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating & Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
I
G
I
G
ESD
ESD
ESD
P
D
T
J
, T
stg
Value
500
500
"15
20
50
1.0
20
2.0
8.0
500
150
1.0
−55
to +175
Unit
V
V
V
A
DC
A
AC
mA
mA
kV
kV
V
W
W/°C
°C
1
D
2
PAK
CASE 418B
STYLE 4
MARKING DIAGRAM
4 Collector
NGB
8245NG
AYWW
1
Gate
3
Emitter
2
Collector
NGB8245N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGB8245NT4G
Package
D
2
PAK
(Pb−Free)
Shipping
†
800 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 2
1
Publication Order Number:
NGB8245N/D
NGB8245N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
Characteristic
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 9.5 A, R
G
= 1 kW, L = 3.5 mH, Starting T
C
= 150°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 1)
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
R
qJC
R
qJA
T
L
1.0
62.5
275
°C/W
°C/W
°C
Symbol
E
AS
Value
158
Unit
mJ
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
(Note 3)
Collector−Emitter Clamp Voltage
BV
CES
I
C
= 2.0 mA
I
C
= 10 mA
I
C
= 12 A, L = 3.5 mH,
R
G
= 1 kW (Note 4)
Collector−Emitter Leakage Current
I
CES
B
VCES(R)
I
C
=
−75
mA
I
CES(R)
V
CE
=
−24
V
BV
GES
I
GES
R
G
R
GE
V
GE(th)
I
C
= 1.0 mA, V
GE
= V
CE
Threshold Temperature Coefficient
(Negative)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 10 A, V
GE
= 3.7 V
I
C
= 10 A, V
GE
= 4.0 V
I
C
= 15 A, V
GE
= 4.0 V
Forward Transconductance
DYNAMIC CHARACTERISTICS
(Note 3)
Input Capacitance
Output Capacitance
Transfer Capacitance
C
ISS
C
OSS
C
RSS
f = 10 kHz, V
CE
= 25 V
T
J
= 25°C
1100
50
15
1400
65
20
1600
80
25
pF
gfs
I
C
= 6.0 A, V
CE
= 5.0 V
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
= 25°C
I
G
=
"5.0
mA
V
GE
=
"5.0
V
V
CE
= 15 V, V
GE
= 0 V
V
CE
= 250 V, R
G
= 1 kW
Reverse Collector−Emitter Clamp
Voltage
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
= 25°C
T
J
=
−40°C
to 175°C
T
J
= 25°C
T
J
= 175°C
T
J
=
−40°C
Reverse Collector−Emitter Leakage
Current
T
J
= 25°C
T
J
= 175°C
T
J
=
−40°C
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
Gate−Emitter Resistor
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
T
J
= 25°C
T
J
= 175°C
T
J
=
−40°C
1.5
0.7
1.7
4.0
0.8
0.8
0.8
10
1.8
1.0
2.0
4.6
1.11
1.10
1.24
19
2.1
1.3
2.3
5.2
1.97
1.85
2.00
25
Mhos
mV/°C
V
V
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
14.25
0.5
30
31
30
−
−
−
12
200
430
450
420
450
475
450
0.002
2.0
33
35
31
0.4
20
0.04
12.5
316
70
16
25
470
500
480
1.0
100
39
40
37
1.0
35
0.2
14
350
V
mA
W
kW
mA
V
mA
V
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
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2
NGB8245N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time (Resistive)
10% V
GE
to 10% I
C
Rise Time (Resistive)
10% I
C
to 90% I
C
Turn−Off Delay Time (Resistive)
90% V
GE
to 90% I
C
Fall Time (Resistive)
90% I
C
to 10% I
C
Turn−Off Delay Time (Inductive)
90% V
GE
to 90% I
C
Fall Time (Inductive)
90% I
C
to 10% I
C
t
d(on)R
t
rR
t
d(off)R
t
fR
t
d(off)L
t
fL
V
CC
= 14 V, R
L
= 1.0
W,
R
G
= 1.0 kW, V
GE
= 5.0 V
V
CC
= 14 V, R
L
= 1.0
W,
R
G
= 1.0 kW, V
GE
= 5.0 V
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
T
J
=
−40°C
to 175°C
0.1
1.0
2.0
3.0
6.5
6.0
1.0
3.4
4.5
8.0
9.7
8.3
2.0
6.0
8.0
12
12.5
11
ms
ms
ms
V
CE
= BV
CES
, L = 0.5mH,
R
G
= 1.0 kW, I
C
= 10 A,
V
GE
= 5.0 V
3. Electrical Characteristics at temperature other than 25°C, Dynamic and Switching characteristics are not subject to production testing.
4. Not subject to production testing.
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3
NGB8245N
TYPICAL ELECTRICAL CHARACTERISTICS
400
I
A
, AVALANCHE CURRENT (A)
350
SCIS ENERGY (mJ)
300
250
200
150
100
50
0
0
2
4
6
V
CC
= 14 V
V
GE
= 5.0 V
R
G
= 1000
W
8
10
INDUCTOR (mH)
T
J
= 175°C
T
J
= 25°C
30
25
20
15
10
5
0
−50
L = 1.8 mH
L = 3.0 mH
V
CC
= 14 V
V
GE
= 5.0 V
R
G
= 1000
W
L = 10 mH
−25
0
25
50
75
100
125
150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 1. Self Clamped Inductive Switching
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2.0
I
C,
COLLECTOR CURRENT (A)
1.75
1.5
1.25
1.0
0.75
0.5
0.25
0.0
−50
V
GE
= 4.5 V
−25
0
25
50
75
100
125
150
175
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
I
C
= 10 A
I
C
= 7.5 A
60
50
40
30
20
10
0
Figure 2. Open Secondary Avalanche Current
vs. Temperature
V
GE
= 10 V
5V
T
J
= 175°C
3.5 V
3V
2.5 V
4.5 V
4V
0
1
2
3
4
5
6
7
8
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
60
I
C,
COLLECTOR CURRENT (A)
50
40
T
J
= 25°C
30
20
10
0
3V
3.5 V
I
C,
COLLECTOR CURRENT (A)
V
GE
= 10 V
5V
4.5 V
4V
60
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
V
GE
= 10 V
50
5V
40
T
J
=
−40°C
30
20
4.5 V
4V
3.5 V
3V
10
0
2.5 V
0
1
2
3
4
5
6
7
8
2.5 V
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
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4
NGB8245N
TYPICAL ELECTRICAL CHARACTERISTICS
V
CE
= 5 V
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
45
I
C
, COLLECTOR CURRENT (A)
40
35
30
25
20
15
10
5
0
0
0.5
1
T
J
= 175°C
1.5
2
2.5
T
J
=
−40°C
3
3.5
4
T
J
= 25°C
10000
1000
100
10
V
CE
= 200 V
1.0
0.1
−50
V
CE
=
−24
V
−25
0
25
50
75
100
125
150 175
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
2.50
GATE THRESHOLD VOLTAGE (V)
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
−50
−25
0
25
50
75
100
125
150
175
Mean + 4
s
Mean
−
4
s
Mean
C, CAPACITANCE (pF)
1000
100
10
1.0
0.1
C
iss
C
oss
C
rss
0
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
12
10
SWITCHING TIME (ms)
8
6
4
2
0
25
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
W
I
C
= 9.0 A
R
L
= 33
W
50
75
100
125
150
175
t
fall
t
delay
12
10
SWITCHING TIME (ms)
8
6
4
2
0
25
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
W
I
C
= 9.0 A
L = 300
mH
t
delay
t
fall
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
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5
Figure 12. Inductive Switching Fall Time vs.
Temperature
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