NGB8207AN, NGB8207ABN
Ignition IGBT
20 A, 365 V, N−Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
http://onsemi.com
•
Ideal for Coil−on−Plug and Driver−on−Coil Applications
•
Gate−Emitter ESD Protection
•
Temperature Compensated Gate−Collector Voltage Clamp Limits
•
•
•
•
•
•
•
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy
−
500 mJ
Gate Resistor (R
G
) = 70
W
This is a Pb−Free Device
20 AMPS, 365 VOLTS
V
CE(on)
= 1.75 V
Typ @ I
C
= 10 A, V
GE
.
4.5 V
C
G
R
G
R
GE
E
D
2
PAK
CASE 418B
STYLE 4
Applications
•
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
C
= 25°C
−
Pulsed
Continuous Gate Current
Transient Gate Current (t
≤
2 ms, f
≤
100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500
W,
C = 100 pF
ESD (Machine Model) R = 0
W,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C (Note 1)
Operating & Storage Temperature Range
Symbol
V
CES
V
GE
I
C
I
G
I
G
ESD
ESD
ESD
P
D
T
J
, T
stg
Value
365
$15
20
50
1.0
20
2.0
8.0
500
165
1.1
−55
to
+175
Unit
V
V
A
DC
A
AC
mA
mA
kV
kV
V
W
W/°C
°C
1
MARKING DIAGRAM
4
Collector
NGB
8207AxG
AYWW
1
Gate
3
Emitter
2
Collector
NGB8207Ax = Device Code
x = N or B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGB8207ANT4G
NGB8207ABNT4G
Package
Shipping
†
D
2
PAK
800 / Tape & Reel
(Pb−Free)
D
2
PAK
800 / Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
December, 2011
−
Rev. 1
1
Publication Order Number:
NGB8207AN/D
NGB8207AN, NGB8207ABN
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
(−40°
≤
T
J
≤
150°C)
Characteristic
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 10 V, Pk I
L
= 16.5 A, L = 3.7 mH, R
g
= 1 kW Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 10 V, Pk I
L
= 10 A, L = 6.1 mH, R
g
= 1 kW Starting T
J
= 125°C
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, Pk I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3)
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
R
qJC
R
qJA
T
L
0.9
50
275
°C/W
°C/W
°C
Symbol
E
AS
Value
500
306
2000
Unit
mJ
E
AS(R)
mJ
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BV
CES
I
CES
I
C
= 2.0 mA
I
C
= 10 mA
Zero Gate Voltage Collector Current
V
CE
= 24 V
V
GE
= 0 V
V
CE
= 250 V
V
GE
= 0 V
Reverse Collector−Emitter Clamp Voltage
B
VCES(R)
I
C
=
−75
mA
Reverse Collector−Emitter Leakage Current
I
CES(R)
V
CE
=
−24
V
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
Gate−Emitter Resistor
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA
V
GE
= V
CE
Threshold Temperature Coefficient (Negative)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 6.0 A
V
GE
= 4.0 V
I
C
= 10 mA
V
GE
= 4.5 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width
v
300
mS,
Duty Cycle
v
2%.
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
1.2
0.7
1.4
−
1.15
1.2
1.2
−
1.5
1.0
1.7
4.0
1.5
1.4
1.6
0.62
2.0
1.3
2.0
−
1.75
1.75
1.75
1.0
mV/°C
V
V
BV
GES
I
GES
R
G
R
GE
I
G
=
$5.0
mA
V
GE
=
$10
V
T
J
=
−40°C
to 150°C
T
J
=
−40°C
to 150°C
T
J
= 25°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
=
−40°C
to 150°C
T
J
=
−40°C
to 150°C
T
J
=
−40°C
to 150°C
T
J
=
−40°C
to 150°C
14.25
−
−
−
25
25
24
−
20
−
12
500
325
340
350
365
0.1
1.0
10
0.25
27
29
26
0.5
25
0.03
13
700
70
16
25
375
390
2.0
5
125
2.5
29
31
29
1.1
40
1.0
14.5
1000
V
mA
W
kW
mA
V
mA
V
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
http://onsemi.com
2
NGB8207AN, NGB8207ABN
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS
(Note 4)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 8.0 A
V
GE
= 4.0 V
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
I
C
= 10 A
V
GE
= 3.7 V
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
I
C
= 10 A
V
GE
= 4.0 V
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
I
C
= 10 A
V
GE
= 4.5 V
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn−On Delay Time (Resistive)
Low Voltage
Rise Time (Resistive)
Low Voltage
Turn−Off Delay Time (Resistive)
Low Voltage
Fall Time (Resistive)
Low Voltage
Turn−On Delay Time (Resistive)
High Voltage
Rise Time (Resistive)
High Voltage
Turn−Off Delay Time (Resistive)
High Voltage
Fall Time (Resistive)
High Voltage
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
CE
= 14 V
R
L
= 1.0
W
V
GE
= 5.0 V
R
G
= 1000
W
V
CE
= 14 V
R
L
= 1.0
W
V
GE
= 5.0 V
R
G
= 1000
W
V
CE
= 300 V
R
L
= 46
W
V
GE
= 5.0 V
R
G
= 1000
W
V
CE
= 300 V
R
L
= 46
W
V
GE
= 5.0 V
R
G
= 1000
W
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
0.5
2.0
2.0
8.0
0.5
0.7
4.0
6.0
0.55
2.32
2.5
10
0.65
1.8
4.7
10
0.7
2.7
3.0
13
0.75
2.0
6.0
15
mSec
C
ISS
C
OSS
C
RSS
f = 10 kHz
V
CE
= 25 V
T
J
= 25°C
750
75
4
810
90
7
900
105
12
pF
gfs
I
C
= 6.0 A
V
CE
= 5.0 V
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
1.2
1.4
1.4
1.35
1.5
1.5
1.35
1.5
1.5
1.35
1.4
1.4
−
1.65
1.6
1.7
1.8
1.9
1.85
1.8
1.8
1.8
1.75
1.75
1.8
15.8
2.0
2.0
2.0
2.2
2.2
2.2
2.1
2.1
2.1
2.05
2.1
2.1
−
Mhos
V
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width
v
300
mS,
Duty Cycle
v
2%.
http://onsemi.com
3
NGB8207AN, NGB8207ABN
TYPICAL ELECTRICAL CHARACTERISTICS
35
30
25
I
SCIS
(A)
I
SCIS
(A)
20
15
10
5
0
0
25°C
150°C
10
20
30
40
50
L (mH)
60
70
80
90
100
35
30
25
20
15
10
5
0
0 100 200 300 400 500 600 700 800 900 100011001200
CLAMPING TIME (mS)
150°C
25°C
Figure 1. Typical Self Clamped Inductive
Switching Performance (SCIS)
V
CE(on)
, COLLECTOR−TO−EMITTER VOLTAGE (V)
2.75
2.5
2.25
2.0
1.75
1.5
1.25
1.0
0.75
2
T
J
= 175°C
4
6
8
10
12
14
16
18
20
T
J
= 25°C
T
J
=
−40°C
V
CE(on)
, COLLECTOR−TO−EMITTER VOLTAGE (V)
2.75
2.5
2.25
2.0
1.75
1.5
Figure 2. Typical Self Clamped Inductive
Switching Performance (SCIS)
V
GE
= 4.0 V
V
GE
= 4.0 V
I
C
= 20 A
I
C
= 16 A
I
C
= 10 A
I
C
= 8.0 A
I
C
= 6.0 A
0
20
40
60
80 100 120 140 160 180
T
J
, JUNCTION TEMPERATURE (°C)
1.25
−40 −20
I
C
, COLLECTOR CURRENT (A)
Figure 3. Collector−to−Emitter Voltage vs.
Collector Current
60
I
C,
COLLECTOR CURRENT (A)
50
40
V
GE
= 4.0 V
30
20
10
0
V
GE
= 3.5 V
V
GE
= 3.0 V
V
GE
= 2.5 V
0
1
2
3
4
5
6
7
8
9
10
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
V
GE
= 6.0 V
5.0 V
I
C,
COLLECTOR CURRENT (A)
V
GE
= 4.5 V
60
50
40
30
Figure 4. Collector−to−Emitter Voltage vs.
Junction Temperature
V
GE
= 6.0 V
5.0 V
4.5 V
V
GE
= 4.0 V
V
GE
= 3.5 V
20
10
0
V
GE
= 3.0 V
V
GE
= 2.5 V
0
1
2
3
4
5
6
7
8
9
10
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 5. On−Region Characteristics
@ T
J
= 255C
http://onsemi.com
4
Figure 6. On−Region Characteristics
@ T
J
=
−405C
NGB8207AN, NGB8207ABN
TYPICAL ELECTRICAL CHARACTERISTICS
60
I
C,
COLLECTOR CURRENT (A)
50
40
30
20
10
0
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
V
GE
= 2.5 V
0
1
2
3
4
5
6
7
8
9
10
I
C
, COLLECTOR CURRENT (A)
60
V
CE
≥
5.0 V
50
40
30
20
10
0
1.0
T
J
=
−40°C
T
J
= 25°C
T
J
= 175°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
V
GE
, GATE−TO−EMITTER VOLTAGE (V)
Figure 7. On−Region Characteristics
@ T
J
= 1755C
V
GE(th)
, GATE THRESHOLD VOLTAGE (V)
10,000
LEAKAGE CURRENT (mA)
1000
V
CE
=
−24
V
100
10
1
0.1
−40 −20
V
CE
= 250 V
0
20
40
60
80 100 120 140 160 180
V
CE
= 320 V
2.0
Figure 8. Transfer Characteristics
I
C
= 1 mA, V
CE
= V
GE
1.75
1.5
1.25
1.0
0.75
0.5
−40 −20
0
20
40
60
80 100 120 140 160 180
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. Collector−to−Emitter Leakage
Current vs. Junction Temperature
10,000
T
J
= 25°C
V
GE
= 0 V
C, CAPACITANCE (pF)
1000
C
iss
10
Figure 10. Gate Threshold Voltage vs.
Temperature
t
r
t
d(off)
t, TIME (ms)
t
f
1
100
C
oss
10
C
rss
1
0
20
40
60
80
100 120 140 160 180 200
t
d(on)
V
CC
= 14 V
V
GE
= 5.0 V
R
L
= 1.0
W
R
G
= 1 kW
−15
10
35
60
85
110
135
160 185
0.1
−40
COLLECTOR−TO−EMITTER VOLTAGE (V)
TEMPERATURE (°C)
Figure 11. Capacitance Variation
Figure 12. Resistive Switching Time Variation
vs. Temperature
http://onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
