NDD03N80Z
N‐Channel Power MOSFET
800 V, 4.5
W
Features
•
•
•
•
ESD Diode−Protected Gate
100% Avalanche Tested
100% Rg Tested
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
800 V
R
DS(ON)
MAX
4.5
W
@ 10 V
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Continuous Drain Current R
qJC
Continuous Drain Current
R
qJC
, T
A
= 100°C
Pulsed Drain Current, V
GS
@ 10 V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I
D
= 2.5 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H.
≤
30%, T
A
= 25°C)
Peak Diode Recovery (Note 1)
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
dv/dt
I
S
T
L
T
J
, T
stg
Value
800
2.9
1.9
12
96
±30
100
2300
4500
4.5
3.3
260
−55
to 150
Unit
V
A
A
A
W
V
mJ
V
V
V/ns
A
1
°C
°C
2
3
1 2
4
4
S (3)
G (1)
N-Channel
D (2)
3
NDD03N80Z−1G
IPAK
CASE 369D
NDD03N80ZT4G
DPAK
CASE 369AA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I
S
= 3.3 A, di/dt
≤
100 A/ms, V
DD
≤
BV
DSS
, T
J
= +150°C
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
October, 2013
−
Rev. 2
1
Publication Order Number:
NDD03N80Z/D
NDD03N80Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
NDD03N80Z
(Note 3) NDD03N80Z
(Note 2) NDD03N80Z−1
Symbol
R
qJC
R
qJA
Value
1.3
33
96
Unit
°C/W
2. Insertion mounted
3. Surface mounted on FR4 board using 1” sq. pad size (Cu area = 1.127” sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Drain−to−Source Leakage Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Static Drain-to-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Output Capacitance (Note 5)
Reverse Transfer Capacitance
(Note 5)
Total Gate Charge (Note 5)
Gate-to-Source Charge (Note 5)
Gate-to-Drain (“Miller”) Charge
(Note 5)
Plateau Voltage
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
GP
R
g
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
rr
V
GS
= 0 V, V
DD
= 30 V
I
S
= 3.3 A, d
i
/d
t
= 100 A/ms
T
J
= 25°C
T
J
= 100°C
V
DD
= 400 V, I
D
= 3.3 A,
V
GS
= 10 V, R
G
= 0
W
V
DS
= 400 V, I
D
= 3.3 A, V
GS
= 10 V
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
440
52
9.0
17
3.5
9.1
6.5
5.5
9.0
7.0
17
9.0
0.9
0.8
360
81
280
1.3
mC
ns
1.6
V
V
W
ns
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(ON)
g
FS
V
DS
= V
GS
, I
D
= 50
mA
Reference to 25°C, I
D
= 50
mA
V
GS
= 10 V, I
D
= 1.2 A
V
DS
= 15 V, I
D
= 1.2 A
3.0
4.1
11
3.7
2.1
4.5
4.5
V
mV/°C
W
S
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C, I
D
= 1 mA
V
DS
= 800 V, V
GS
= 0 V
V
GS
=
±20
V
T
J
= 25°C
T
J
= 125°C
800
870
1.0
50
±10
mA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
RESISTIVE SWITCHING CHARACTERISTICS
(Note 6)
SOURCE−DRAIN DIODE CHARACTERISTICS
I
S
= 3.0 A, V
GS
= 0 V
4. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
5. Guaranteed by design.
6. Switching characteristics are independent of operating junction temperatures.
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2
NDD03N80Z
TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
6.0 V
1.0
0.5
0.0
5.0 V
5.2 V
5.8 V
5.6 V
5.4 V
25
5.0
V
DS
= 25 V
I
D
, DRAIN CURRENT (A)
4.0
T
J
=
−55°C
3.0
2.0
1.0
0.0
T
J
= 150°C
T
J
= 25°C
V
GS
= 6.8 V to 10 V
6.6 V
6.4 V
6.2 V
I
D
, DRAIN CURRENT (A)
0
5
10
15
20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1
2
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
5.0
I
D
= 1.2 A
T
J
= 25°C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
V
GS
= 10 V
T
J
= 25°C
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5 10
3.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
Figure 3. On−Region versus Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 1.2 A
V
GS
= 10 V
1.15
BV
DSS
, NORMALIZED BREAKDOWN
VOLTAGE (V)
I
D
= 1 mA
1.10
1.05
1.00
0.95
0.90
−50
150
−25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BV
DSS
Variation with Temperature
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3
NDD03N80Z
TYPICAL CHARACTERISTICS
10.0
10000
C, CAPACITANCE (pF)
I
DSS
, LEAKAGE (mA)
T
J
= 150°C
1000
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
1.0
100
T
J
= 125°C
10
C
rss
0.1
0
50
100 150 200 250 300 350 400 450 500
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1
1
Figure 7. Drain−to−Source Leakage Current
versus Voltage
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
T
V
DS
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
Figure 8. Capacitance Variation
400
350
V
GS
300
250
200
150
V
DS
= 400 V
I
D
= 3.3 A
T
J
= 25°C
100
50
0
20
Q
GS
Q
GD
0
2
4
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
I
S
, SOURCE CURRENT (A)
6
8
10 12 14 16
Q
g
, TOTAL GATE CHARGE (nC)
18
V
DD
= 400 V
I
D
= 3 A
V
GS
= 10 V
t
d(off)
t
r
t
f
t, TIME (ns)
100
10
10
t
d(on)
1.0
T
J
= 150°C
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.3
125°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
25°C
450
−55°C
1.2
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
NDD03N80Z
TYPICAL CHARACTERISTICS
100
V
GS
≤
30 V
SINGLE PULSE
T
C
= 25°C
I
D
, DRAIN CURRENT (A)
10
100
ms
10
ms
1 ms
10 ms
dc
1
0.1
0.01
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1
R(t) (C/W)
50% (DUTY CYCLE)
20%
10%
0.1
5.0%
2.0%
1.0%
0.01
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
R
qJC
= 1.3°C/W
Steady State
100
1000
PULSE TIME (s)
Figure 13. Thermal Impedance (Junction−to−Case)
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