Ordering number : EN8967A
SBE813
SANYO Semiconductors
DATA SHEET
SBE813
Applications
•
Low IR Schottky Barrier Diode
30V, 3.0A Rectifier
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
Small switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package permitting applied sets to be small and slim
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I
O
I
FSM
Tj
Tstg
50Hz sine wave, 1 cycle
Conditions
Ratings
30
35
3.0
20
-
-55 to +125
-
-55 to +125
Unit
V
V
A
A
°C
°C
Package Dimensions
unit : mm (typ)
7012-001
0.25
0.3
8
7
6 5
0.15
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
SBE813-TL-E
Packing Type : TL
Marking
2.8
2.3
SE
1
2
2.9
0.75
3
0.65
4
TL
LOT No.
0.25
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : VEC8
Electrical Connection
8
7
6
5
0.07
1
2
3
4
http://www.sanyosemi.com/en/network/
90512 TKIM/32406SB MSIM TB-00002132 No.8967-1/6
SBE813
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
IR=0.5mA
IF=2.0A
IF=3.0A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (1200mm
×0.8mm)
2
Conditions
Ratings
min
30
0.435
0.47
90
20
50
0.485
0.52
42
typ
max
Unit
V
V
V
μA
pF
ns
°C / W
Ordering Information
Device
SBE813-TL-E
Package
VEC8
Shipping
3,000pcs./reel
memo
Pb Free
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1
0.2
IF -- VF
10000
IR -- VR
Ta=125
°
C
1000
100
°
C
Reverse Current, IR --
μA
75
°
C
Forward Current, IF -- A
100
50
°
C
25
°
C
10
1.0
0
°
C
--25
°
C
0.1
25
°
100
C
°
C
75
°
C
50
°
C
25
°
C
0
°
C
--25
°
C
Ta=
1
0.01
0.001
0.3
0.4
0.5
0.6
0.7
IT09868
0
5
10
15
20
25
30
35
IT09869
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.5
1.0
180°
360°
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
Reverse Voltage, VR -- V
4.00E--04
3.50E--04
3.00E--04
2.50E--04
2.00E--04
PR(AV) -- VR
Rectangular
wave
θ
360°
(1)
(2) (4) (3)
(1)Rectangular wave
θ
=300
°
(2)Rectangular wave
θ
=240
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Rectangular
wave
V
360°
θ
R
180°
VR
360°
(1)
(2)
(3)
Sine
wave
Sine
wave
1.50E--04
1.00E--04
5.00E--05
0.00E+00
0
5
10
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
1.5
2.0
2.5
3.0
3.5
IT09870
(4)
15
20
25
30
35
IT10631
Average Output Current, IO -- A
Peak Reverse Voltage, VR -- V
No.8967-2/6
SBE813
140
Tc -- IO
Interterminal Capacitance, C -- pF
120
Case Temperature, Tc --
°C
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
*When mounted in reliability
operaion board, Rth(J-a)=50°C/W
7
5
C -- VR
100
3
2
80
60
Rectangular
wave
θ
360°
100
7
5
40
20
0
0
Sine
wave
180°
360°
0.5
1.0
1.5
(1)
(2) (4)
(3)
2.0
2.5
3.0
3.5
IT10632
3
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Average Output Current, IO -- A
24
IFSM -- t
I
S
Reverse Voltage, VR -- V
IT09871
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
20
16
20ms
t
12
8
4
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
ID00523
No.8967-3/6
SBE813
Taping Specification
SBE813-TL-E
No.8967-4/6
SBE813
Outline Drawing
SBE813-TL-E
Mass (g) Unit
0.015 mm
* For reference
Land Pattern Example
Unit: mm
0.4
0.6
2.8
0.65
No.8967-5/6
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