Ordering number : ENA1574B
RD0506T
SANYO Semiconductors
DATA SHEET
RD0506T
Features
•
•
•
Diffused Junction Silicon Diode
Low VF
•
High-Speed Switching Diode
•
•
High breakdown voltage (VRRM=600V)
Low noise at the time of reverse recovery
Halogen free compliance
Fast reverse recovery time
Low forward voltage (VF max=1.6V)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
Conditions
Ratings
600
5
Sine wave 10ms, 1 cycle
80
150
--55 to +150
Unit
V
A
A
°C
°C
I
O
I
FSM
Tj
Tstg
Package Dimensions
unit : mm (typ)
7518-002
6.5
5.0
1.5
4
2.3
0.5
Package Dimensions
unit : mm (typ)
7003-001
RD0506T-H
6.5
5.0
4
2.3
1.5
0.5
RD0506T-TL-H
7.0
5.5
5.5
7.0
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
0.85
0.5
1.2
1
2
3
1 : No Contact
2 : Cathode
3 : Anode
4 : Cathode
SANYO : TP
2.3
2.3
1 : No Contact
2 : Cathode
3 : Anode
4 : Cathode
SANYO : TP-FA
2.3
2.3
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Marking
(TP, TP-FA)
R0506
LOT No.
Packing Type (TP-FA) : TL
Electrical Connection
4
TL
1
2
3
http://www.sanyosemi.com/en/network/
91212 TKIM/N0409SC TKIM TC-00002160 No. A1574-1/7
RD0506T
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr1
trr2
Rth(j-c)
IR=1mA
IF=5A
VR=600V
IF=5A, di / dt=100A/μs
IF=0.5A, IR=1A
Junction -Case
Conditions
Ratings
min
600
1.3
40
16
6
1.6
50
50
typ
max
Unit
V
V
μA
ns
ns
°C / W
Ordering Information
Device
RD0506T-H
RD0506T-TL-H
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
memo
Pb Free and halogen Free
10
7
5
3
2
IF -- VF
10000
1000
IR -- VR
Ta=150
°
C
75
°
C
Forward Current, IF -- A
5
°
C
10
0
°
C
25
°
C
Ta=
150
°
C
0.1
7
5
3
2
0.01
7
5
3
2
0
0
°
C
-
-25
1.0
7
5
3
2
Reverse Current, IR --
μA
100
10
1.0
0.1
0.01
0.001
125
°
C
100
°
C
75
°
C
°
C
12
50
°
C
25
°
C
0.001
50
°
C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
100
200
300
400
500
600
IT15095
Forward Voltage, VF -- V
3
2
Cj -- VR
IT15094
120
Reverse Voltage, VR -- V
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
f=100kHz
Junction Capacitance, Cj -- pF
100
100
7
5
3
2
80
60
40
20
10
7
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT14315
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Reverse Voltage, VR -- V
Time, t -- s
IT15096
No. A1574-2/7
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
