NTB6412AN, NTP6412AN,
NVB6412AN
N-Channel Power MOSFET
100 V, 58 A, 18.2 mW
Features
•
•
•
•
Low R
DS(on)
High Current Capability
100% Avalanche Tested
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Continuous Drain Cur-
rent R
qJC
Power Dissipation
R
qJC
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
100
$20
58
41
167
240
−55
to
+175
58
300
W
A
°C
A
mJ
Unit
V
V
A
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I
D
MAX
(Note 1)
58 A
V
(BR)DSS
100 V
R
DS(ON)
MAX
18.2 mW @ 10 V
N−Channel
D
G
S
4
4
1
2
3
TO−220AB
CASE 221A
STYLE 5
3
D
2
PAK
CASE 418B
STYLE 2
t
p
= 10
ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 44.7 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
1
2
T
L
260
°C
4
Drain
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Max
0.9
33
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
NTP
6412ANG
AYWW
1
Gate
2
Drain
3
Source
1
Gate
NTB
6412ANG
AYWW
2
Drain
3
Source
6412AN = Specific Device Code
G
= Pb−Free Device
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
January, 2012
−
Rev. 1
1
Publication Order Number:
NTB6412AN/D
NTB6412AN, NTP6412AN, NVB6412AN
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(th)
V
GS(th)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
RR
V
GS
= 0 V, I
S
= 58 A,
dI
SD
/dt = 100 A/ms
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DD
= 80 V,
I
D
= 58 A, R
G
= 6.2
W
V
GS
= 10 V, V
DS
= 80 V,
I
D
= 58 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
V
GS
= 10 V, I
D
= 58 A
V
GS
= 10 V, I
D
= 20 A
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
2700
400
150
73
2.5
13.5
35
5.6
2.2
V
W
ns
100
nC
3500
500
pF
V
DS
= 5 V, I
D
= 20 A
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
100
103
1.0
100
$100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On−Resistance
V
DS
= 0 V, V
GS
=
$20
V
V
GS
= V
DS
, I
D
= 250
mA
2.0
9.2
16.8
15.6
31
4.0
V
mV/°C
18.2
18.2
mW
S
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
I
S
= 58 A
0.96
0.89
85
60
25
270
nC
ns
1.3
V
16
140
70
126
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTB6412AN, NTP6412AN, NVB6412AN
120
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
100
10 V
80
60
40
20
0
0
5.4 V
5.0 V
V
GS
= 4.4 V
1
2
3
4
5
0
2
3
4
6.0 V
7.5 V
6.5 V
I
D
, DRAIN CURRENT (A)
120
100
80
60
40
20
T
J
=
−55°C
5
6
7
8
T
J
= 125°C
T
J
= 25°C
V
DS
w
10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.04
0.06
0.05
0.04
Figure 2. Transfer Characteristics
I
D
= 58 A
T
J
= 25°C
V
GS
= 10 V
T
J
= 175°C
T
J
= 125°C
0.03
0.03
0.02
0.01
0
10
T
J
= 25°C
T
J
=
−55°C
0.02
0.01
5
6
7
8
9
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
3
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.5
2
I
D
= 58 A
V
GS
= 10 V
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
10000
T
J
= 150°C
1.5
1
1000
T
J
= 125°C
0.5
−50
−25
0
25
50
75
100
125
150
175
100
10
20
30
40
50
60
70
80
90 100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
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3
NTB6412AN, NTP6412AN, NVB6412AN
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
V
GS
= 0 V
Q
T
V
GS
Q
gd
100
80
60
40
V
DS
= 80 V
I
D
= 58 A
T
J
= 25°C
0
10
20
30
40
50
60
Q
g
, TOTAL GATE CHARGE (nC)
70
20
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5000
4000
3000
C
iss
2000
1000
0
C
rss
0
C
oss
10 20 30 40 50 60 70 80 90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
8
V
DS
6
4
2
0
Q
gs
C, CAPACITANCE (pF)
100
Figure 7. Capacitance Variation
1000
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
60
I
S
, SOURCE CURRENT (A)
50
40
30
20
10
0
T
J
= 25°C
V
GS
= 0 V
V
DS
= 80 V
I
D
= 58 A
V
GS
= 10 V
t
f
t
r
t
d(off)
t
d(on)
t, TIME (ns)
100
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.0
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
AVALANCHE ENERGY (mJ)
300
I
D
= 44.7 A
I
D
, DRAIN CURRENT (A)
100
10
ms
100
ms
200
10
1 ms
10 ms
dc
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
100
1
0.1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
0
25
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE
175
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4
NTB6412AN, NTP6412AN, NVB6412AN
1
D = 0.5
0.2
0.1
R(t) (°C/W)
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
1
10
100
1000
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTB6412ANG
NTB6412ANT4G
NTP6412ANG
NVB6412ANT4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
TO−220
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units / Rail
800 / Tape & Reel
50 Units / Rail
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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