NSBC123TPDP6
Complementary Bias
Resistor Transistors
R1 = 2.2 kW, R2 =
8
kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
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PIN CONNECTIONS
(2)
(1)
R
2
•
S and NSV Prefix for Automotive and Other Applications
•
•
•
•
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q1 (PNP) and Q2 (NPN), unless otherwise noted)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
−NPN
−PNP
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
12
6
5
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
A
M
1
= Specific Device Code
= Date Code*
*Date Code orientation may vary depending upon
manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
NSBC123TPDP6T5G
Package
SOT−963
Shipping
†
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2017
−
Rev. 1
1
A
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAMS
M
SOT−963
CASE 527AD
Publication Order Number:
DTC123TP/D
NSBC123TPDP6
THERMAL CHARACTERISTICS
Characteristic
NSBC123TPDP6 (SOT−963) One Junction Heated
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
231
269
1.9
2.2
540
464
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
NSBC123TPDP6 (SOT−963) Both Junction Heated
(Note 3)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
339
408
2.7
3.3
369
306
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
Junction and Storage Temperature Range
1. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
3. Both junction heated values assume total power is sum of two equally powered channels.
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2
NSBC123TPDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C both polarities Q
1
(PNP) and Q
2
(NPN), unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= 10 mA, I
B
= 1.0 mA)
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100
mA)
(NPN)
(V
CE
= 5.0 V, I
C
= 100
mA)
(PNP)
Input Voltage (on)
(V
CE
= 0.2 V, I
C
= 10 mA) (NPN)
(V
CE
= 0.2 V, I
C
= 10 mA) (PNP)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
160
−
−
−
−
−
−
4.9
1.5
−
350
−
0.6
0.6
0.9
0.9
−
−
2.2
−
−
0.25
−
−
−
−
0.2
−
2.9
−
Vdc
Vdc
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
4.0
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
V
i(on)
Vdc
V
OL
V
OH
R1
R
1
/R
2
Vdc
Vdc
kW
250
P
D
, POWER DISSIPATION (mW)
200
(1)
150
100
(1) SOT−963; 100 mm
2
, 1 oz. copper trace
50
0
−50
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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3
NSBC123TPDP6
TYPICAL CHARACTERISTICS
−
NPN TRANSISTOR
NSBC123TPDP6
1
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
150°C
25°C
−55°C
0.1
25°C
150°C
100
−55°C
V
CE
= 10 V
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0.01
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
vs. I
C
2.0
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
1.6
1.2
0.8
0.4
0
f = 10 kHz
I
E
= 0 V
T
A
= 25°C
100
Figure 3. DC Current Gain
150°C
10
25°C
−55°C
1
0.1
V
O
= 5 V
0.01
0
0.4
0.8
1.2
1.6
2.0
2.4
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (V)
V
in
, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
10
Figure 5. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
25°C
1
−55°C
150°C
V
O
= 0.2 V
0
10
20
30
40
50
0.1
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
NSBC123TPDP6
TYPICAL CHARACTERISTICS
−
PNP TRANSISTOR
NSBC123TPDP6
1
V
CE(sat)
, COLLECTOR−EMITTER
VOLTAGE (V)
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
1000
150°C
25°C
100
−55°C
25°C
0.1
150°C
−55°C
10
V
CE
= 10 V
0.01
0
10
20
30
40
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
vs. I
C
7
C
ob
, OUTPUT CAPACITANCE (pF)
6
5
4
3
2
1
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
150°C
10
1
0.1
0.01
Figure 8. DC Current Gain
−55°C
25°C
V
O
= 5 V
0
1
2
3
0.001
V
R
, REVERSE VOLTAGE (V)
V
in
, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
100
Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
10
25°C
−55°C
1
150°C
0.1
V
O
= 0.2 V
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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