D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
Si4953DY
June 1999
Si4953DY*
Dual P-Channel Enhancement Mode MOSFET
General Description
These P-Channel Enhancement Mode MOSFETs are
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize on-
state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
-4.9 A, -30 V. R
DS(on)
=
0.053 Ω
@ V
GS
= -10 V
R
DS(on)
=
0.095 Ω
@ V
GS
= -4.5 V.
Low gate charge.
Fast switching speed.
High power and current handling capability.
Applications
Battery switch
Load switch
Motor controls
'
'
'
'
62
6\PERO
W
'66
W
*66
D
'
6
*
6
*
R
$EVROXWH 0D[LPXP 5DWLQJV
9
hvT
prÃWyhtr
BhrT
prÃWyhtr
9
hvÃ8
r
ÃÃÃÃÃÃÃU
$
2!$ 8ÃyrÃur
vrÃrq
3DUDPHWHU
5DWLQJV
"
8QLWV
W
W
6
±
!
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ
IrÃ
h
Ã8vÃ
ÃQyrq
#(
"
!
Q
'
Qr
Ã9vvhvÃs
Ã9hyÃPr
hv
Qr
Ã9vvhvÃs
ÃTvtyrÃPr
hvÃÃÃÃÃÃÃÃÃÃÃÃ
IrÃ
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ
IrÃ
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ
IrÃ
h
i
X
%
(
$$ÃÃ
$
p
U
-
ÃU
67*
Pr
hvtÃhqÃT
htrÃEpvÃUrr
h
rÃShtr
°
8
7KHUPDO &KDUDFWHULVWLFV
S
θ
-$
S
θ
-&
Uur
hyÃSrvhprÃEpv6ivr
Uur
hyÃSrvhprÃEpv8hrÃÃÃÃÃÃÃÃÃÃÃÃ
IrÃ
%!$
#
°
8X
°
8X
3DFNDJH 0DUNLQJ DQG 2UGHULQJ ,QIRUPDWLRQ
9rvprÃHh
xvt
#($"
9rvpr
Tv#($"9`
SrryÃTvr
"¶¶
UhrÃvqu
!
4XDQWLW\
!$Ãv
9vrÃhqÃhshp
vtÃ
prÃiwrpÃÃpuhtrÃvuÃ
v
Ãvsvphv
©1999
Fairchild Semiconductor Corporation
Si4953DY Rev. A
Si4953DY
(OHFWULFDO &KDUDFWHULVWLFV
6\PERO
7W
9TT
U Ã2Ã!$8ÃyrÃur
vrÃrq
$
3DUDPHWHU
9
hvT
prÃ7
rhxq
Wyhtr
7HVW &RQGLWLRQV
W
BT
Ã2ÃÃWÃD
9
Ã2Ã!$Ã
0LQ
"
7\S
0D[
8QLWV
W
2II &KDUDFWHULVWLFV
∆
7W
∆
U
D
9TT
9TT
µ
6
7
rhxqÃWyhtr
Urr
h
rÃ8rssvpvr
ar
ÃBhrÃWyhtrÃ9
hv
8
r
D
9
Ã2Ã!$Ã
µ
6Srsr
rprqÃÃ!$
°
8
°
!
W 8
°
E
W
9T
Ã2Ã"ÃWÃW
BT
Ã2ÃÃW
W
9T
Ã2Ã"ÃWÃW
BT
Ã2ÃÃWÃU
E
Ã2Ã$$ 8
W
BT
Ã2Ã!ÃWÃW
9T
Ã2ÃÃW
!$
µ
6
6
D
BTTA
Bhr7qÃGrhxhtrÃ8
r
A
h
q
D
BTTS
Bhr7qÃGrhxhtrÃ8
r
Srr
r
W
BT
Ã2Ã!ÃÃWÃW
9T
Ã2ÃÃW
6
2Q &KDUDFWHULVWLFV
W
BTu
IrÃ!
BhrÃUu
ruyqÃWyhtr
BhrÃUu
ruyqÃWyhtr
Urr
h
rÃ8rssvpvr
ThvpÃ9
hvT
pr
PSrvhpr
W
9T
Ã2ÃW
BT
ÃD
9
Ã2Ã!$Ã
D
9
Ã2Ã!$Ã
µ
6
#
W
W 8
∆
W
∆
U
BTu
µ
6Srsr
rprqÃÃ!$
°
8
°
°
E
S
9T
W
BT
Ã2Ã
W
BT
Ã2Ã
ÃWÃD
9
Ã2Ã#(Ã6
ÃWÃD
9
Ã2Ã#(Ã6U
E
2 !$ 8
#
$$
$'
!
$"
'$
($
Ω
W
BT
Ã2Ã#$ÃWÃD
9
Ã2Ã"%Ã6
D
9
t
AT
PThrÃ9
hvÃ8
r
A
h
qÃU
hpqphpr
W
BT
Ã2Ã
W
9T
Ã2Ã
ÃWÃW
9T
Ã2Ã$ÃW
$ÃWÃD
9
Ã2Ã#(Ã6
6
T
'\QDPLF &KDUDFWHULVWLFV
8
v
8
8
DÃ8hhpvhpr
PÃ8hhpvhpr
Srr
rÃU
hsr
8hhpvhpr
W
9T
Ã2Ã
$ÃWÃW
BT
Ã2ÃÃW
&$
!!
A
A
A
sÃ2Ã ÃHC
6ZLWFKLQJ &KDUDFWHULVWLFV
q
qss
s
U
PÃ9ryhÃUvr
U
PÃSvrÃUvr
U
PssÃ9ryhÃUvr
U
PssÃAhyyÃUvr
9
hvT
prÃSrr
r
Srpr
ÃUvr
R
t
R
t
R
tq
UhyÃBhrÃ8uh
tr
BhrT
prÃ8uh
tr
Bhr9
hvÃ8uh
tr
IrÃ!
W
99
Ã2Ã
W
BT
Ã2Ã
$ÃWÃD
9
Ã2Ã
Ã6ÃS
G
Ã2Ã $Ã
ÃÃWÃS
B@I
Ã2Ã%Ã
Ω
Ω
!
#
!#
%
$
!
#
!$
(
T
D
AÃ
2Ã &Ã6ÃqvqÃ2Ã 6
µ
$
'
"
W
9T
Ã2Ã
W
BT
Ã2Ã
$ÃWÃD
9
Ã2Ã#(Ã6
ÃW
!$
8
8
8
'UDLQ6RXUFH 'LRGH &KDUDFWHULVWLFV DQG 0D[LPXP 5DWLQJV
D
T
W
T9
HhvÃ8vÃ9
hvT
prÃ9vqrÃA
h
qÃ8
r
9
hvT
prÃ9vqrÃA
h
q
Wyhtr
W
BT
Ã2ÃÃWÃD
T
Ã2Ã &Ã6ÃÃ
ÃÃÃÃÃÃÃIrÃ!
&$
&
!
6
W
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 125° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a minimum
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Si4953DY Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
为我们提建议&公告
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
