CY62256EV18 MoBL
®
256-Kbit (32 K × 8) Static RAM
256-Kbit (32 K × 8) Static RAM
Features
■
■
Functional Description
The CY62256EV18 is a high performance CMOS static RAM
module organized as 32 K words by 8-bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power-down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE HIGH). The eight input
and output pins (I/O
0
through I/O
7
) are placed in a high
impedance state when the device is deselected (CE HIGH), the
outputs are disabled (OE HIGH), or a write operation is in
progress (CE LOW and WE LOW).
To write to the device, take chip enable (CE) LOW and write
enable (WE) LOW. Data on the eight I/O pins is then written into
the location specified on the address pin (A
0
through A
14
).
To read from the device, take chip enable (CE LOW) and output
enable (OE) LOW while forcing write enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins appear on the I/O pins.
Very high speed: 70 ns
Temperature ranges:
❐
Industrial: –40 °C to +85 °C
Wide voltage range: 1.65 V to 2.25 V
Pin compatible with CY62256N
Ultra low standby power
❐
Typical standby current: 1 µA
❐
Maximum standby current: 4 µA
Ultra low active power
❐
Typical active current: 1.3 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Offered in Pb-free 28-pin Narrow SOIC package
■
■
■
■
■
■
■
■
Logic Block Diagram
INPUTBUFFER
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
CE
WE
OE
A
14
A
13
A
12
A
11
A
1
A
0
ROW DECODER
I/O
0
I/O
1
SENSE AMPS
I/O
2
I/O
3
I/O
4
I/O
5
32K x 8
Y
ARRA
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
Cypress Semiconductor Corporation
Document #: 001-69650 Rev. *B
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised September 4, 2012
CY62256EV18 MoBL
®
Contents
Pin Configuration ............................................................. 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 10
Ordering Information ...................................................... 11
Ordering Code Definitions ......................................... 11
Package Diagrams .......................................................... 12
Acronyms ........................................................................ 13
Document Conventions ................................................. 13
Units of Measure ....................................................... 13
Document History Page ................................................. 14
Sales, Solutions, and Legal Information ...................... 14
Worldwide Sales and Design Support ....................... 14
Products .................................................................... 14
PSoC Solutions ......................................................... 14
Document #: 001-69650 Rev. *B
Page 2 of 14
CY62256EV18 MoBL
®
Pin Configuration
Figure 1. 28-pin Narrow SOIC
Product Portfolio
Power Dissipation
Product
Range
V
CC
Range (V)
Min
CY62256EV18LL Industrial
1.65
Typ
[1]
1.8
Max
2.25
70
Speed
(ns)
Typ
[1]
1.3
Operating I
CC
(mA)
f = 1 MHz
Max
2.0
f = f
max
Typ
[1]
11
Max
16
Standby I
SB2
(µA)
Typ
[1]
1
Max
4
Notes
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
Document #: 001-69650 Rev. *B
Page 3 of 14
CY62256EV18 MoBL
®
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground
potential .......................................................–0.2 V to 2.45 V
DC voltage applied to outputs
in high Z State
[2, 3]
......................................–0.2 V to 2.45 V
DC input voltage
[2, 3]
...................................–0.2 V to 2.45 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, method 3015) ................................ > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
V
CC
[4]
1.65 V to
2.25 V
CY62256EV18LL Industrial –40 °C to +85 °C
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
CC
operating supply current
Test Conditions
I
OH
= –0.1 mA
I
OL
= 0.1 mA
V
CC
= 1.65 V to 2.25 V
V
CC
= 1.65 V to 2.25 V
GND < V
I
< V
CC
GND < V
O
< V
CC
, output disabled
f = f
max
= 1/t
RC
f = 1 MHz
I
SB1
Automatic CE power-down
current — CMOS inputs
V
CC
= 2.25 V
I
OUT
= 0 mA
CMOS levels
70 ns
Min
1.4
–
1.4
–0.2
–1
–1
–
–
–
Typ
[5]
–
–
–
–
–
–
11
1.3
1
Max
–
0.2
V
CC
+ 0.2 V
0.4
+1
+1
16
2.0
4
Unit
V
V
V
V
µA
µA
mA
mA
µA
CE > V
CC
0.2
V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V
f = f
max
(address and data only),
f = 0 (OE and WE), V
CC
= 2.25 V
CE > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= 2.25 V
I
SB2 [6]
Automatic CE power-down
current — CMOS inputs
–
1
4
µA
Notes
2. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
3. V
IH(max)
= V
CC
+ 0.5 V for pulse durations less than 20 ns.
4. Full device AC operation assumes a 100
µ
s ramp time from 0 to V
CC(min)
and 200
µ
s wait time after V
CC
stabilization.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
6. Chip enables (CE) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document #: 001-69650 Rev. *B
Page 4 of 14
CY62256EV18 MoBL
®
Capacitance
Parameter
[7]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
[7]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit
board
28-pin SOIC
76.56
36.07
Unit
°C/W
°C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
GND
Rise Time = 1 V/ns
10%
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Equivalent to:
THEVENIN
EQUIVALENT
R
TH
OUTPUT
Parameters
R1
R2
R
TH
V
TH
V
1.8 V
13500
10800
6000
0.8
Unit
V
Note
7. Tested initially and after any design or process changes that may affect these parameters.
Document #: 001-69650 Rev. *B
Page 5 of 14
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