VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 80 A
Base
common
cathode
2, 4
FEATURES
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and
JEDEC-JESD47
qualified
according
to
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
Anode
1
Anode
3
• Halogen-free according to IEC 61249-2-21
definition (-M3 only)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-247AC
80 A
1000 V, 1200 V
1.35 V
1100 A
90 ns
150 °C
Single die
0.5
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-80APF1... soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, - 100 A/μs
40 A, T
J
= 25 °C
Sinusoidal waveform
TEST CONDITIONS
VALUES
1000/1200
80
1100
90
1.2
- 40 to 150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-80APF10PbF, VS-80APF10-M3
VS-80APF12PbF, VS-80APF12-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
12
Revision: 20-Oct-11
Document Number: 93725
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 92 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
80
1100
1250
5000
7000
70 000
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
80 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.35
4.03
0.87
0.1
12
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 80 A
pk
25 A/μs
25 °C
VALUES
480
7.1
2.1
0.5
UNITS
ns
A
μC
dir
dt
Q
rr
I
RM(REC)
I
FM
t
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
0.35
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
80APF10
80APF12
°C/W
UNITS
°C
Mounting torque
Marking device
Revision: 20-Oct-11
Document Number: 93725
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
150
140
Vishay Semiconductors
Maximum Average Forward
Power Loss (W)
180°
120°
90°
60°
30°
RMS limit
Maximum Allowable Case
Temperature (°C)
140
130
80EPF.. Series
R
thJC
(DC) = 0.35 °C/W
120
100
80
60
Ø
120
110
100
90
30°
80
0
10
20
30
40
50
Conduction angle
Ø
60°
90°
180°
120°
60
70
80
90
40
20
0
Conduction angle
80EPF.. Series
T
J
= 150 °C
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
1200
80EPF.. Series
R
thJC
(DC) = 0.35 °C/W
1100
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
130
Peak Half Sine Wave
Forward Current (A)
1000
900
800
700
600
500
400
80EPF.. Series
Ø
120
110
100
90
Conduction period
60°
30°
DC
120°
90°
180°
80
100
120
140
80
300
1
10
100
0
20
40
60
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
200
Maximum Average Forward
Power Loss (W)
175
150
125
100
Peak Half Sine Wave
Forward Current (A)
DC
180°
120°
90°
60°
30°
1300
1200
1100
1000
900
800
700
600
500
400
140
300
0.01
80EPF.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
RMS limit
75
Ø
50
25
0
0
20
40
60
80
Conduction period
80EPF.. Series
T
J
= 150 °C
100
120
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 20-Oct-11
Document Number: 93725
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
1000
Vishay Semiconductors
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
80EPF.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
800
700
80EPF.. Series
T
J
= 25 °C
12 000
10 000
8000
6000
4000
2000
I
FM
= 1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
80EPF.. Series
T
J
= 25 °C
I
FM
= 80 A
600
500
400
300
200
100
I
FM
= 1 A
0
I
FM
= 20 A
I
FM
= 40 A
I
FM
= 10 A
I
FM
= 80 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Q
rr
- Maximum Reverse
Recovery Charge (nC)
t
rr
- Maximum Reverse
Recovery Time (ns)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
1800
1600
80EPF.. Series
T
J
= 150 °C
I
FM
= 80 A
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 1 A
25 000
80EPF.. Series
T
J
= 150 °C
I
FM
= 80 A
Q
rr
- Maximum Reverse
Recovery Charge (nC)
t
rr
- Maximum Reverse
Recovery Time (ns)
1400
1200
1000
800
600
400
200
0
0
40
80
120
160
200
20 000
15 000
I
FM
= 40 A
10 000
I
FM
= 20 A
I
FM
= 10 A
5000
I
FM
= 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 20-Oct-11
Document Number: 93725
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
45
40
80EPF.. Series
T
J
= 25 °C
I
FM
= 80 A
60
50
40
30
20
10
0
0
40
80
120
160
200
0
40
80
120
160
200
80EPF.. Series
T
J
= 150 °C
I
FM
= 80 A
Vishay Semiconductors
I
rr
- Maximum Reverse
Recovery Current (A)
35
30
25
20
15
10
5
0
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 40 A
I
FM
= 20 A
I
rr
- Maximum Reverse
Recovery Current (A)
I
FM
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
1
0.1
Steady state value
(DC operation)
0.01
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
80EPF.. Series
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 20-Oct-11
Document Number: 93725
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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