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RU2B: 产品描述1 A, 800 V, SILICON, SIGNAL DIODE; 产品类别半导体分立半导体; 文件大小390KB，共1页; 制造商TAYCHIPST; 官网地址http://www.taychipst.com

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RU2B概述

1 A, 800 V, SILICON, SIGNAL DIODE

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RU 1/2

RU2M series

0.2A-1.1A

Ultra-Fast-Recovery Rectifier Diodes

Absolute Maximum Ratings

Parameter

Type No.

(V)

F (AV)

(A)

FSM

(A)

50Hz

Half-cycle Sinewave

Single Shot

400V-1000V

Electrical Characteristics (Ta =25°C)

Tstg

(°C)

(V)

max

(A)

(µA)

max

(H)

(µA)

Ta =100°C max

Others

(°C)

(µs)

(mA)

(µs)

(mA)

Rth ( j - )

(°C/ W)

Mass

Fig.

(g)

2AM

400

600

800

1000

200

600

800

1000

400

600

0.8

1.1

1.2

1.1

300

0.4

10/10

0.18

10/20

0.4

1.0

0.2

–40 to +150

1.5

1.0

300

0.4

10/10

0.18

10/20

0.4

0.25

2.5

3.0

0.25

200

0.4

10/10

0.18

10/20

0.4

RU 1 series

0.25

Ta — I

F(AV)

Derating

2.0

— I

Characteristics

(Typical)

FMS

Peak Forward Surge Current I

FSM

(A)

Rating

FSM

(A)

Average Forward Current I

F(AV)

(A)

Forward Current I

(A)

0.2

1.0

20ms

0º

0.15

0.5

0.1

ºC

0.15

0.1

0.05

0.6

100

125

Ambient Temperature Ta (°C)

150

0.7

0.8

0.9

1.0

Forward Voltage V

(V)

1.1

Overcurrent Cycles

RU 2 series

1.0

Ta — I

F(AV)

Derating

5.0

— I

Characteristics

(Typical)

FMS

Peak Forward Surge Current I

FSM

(A)

Rating

FSM

(A)

Average Forward Current I

F(AV)

(A)

Forward Current I

(A)

0.8

20ms

0º

0.6

1.0

0.5

ºC

0.4

0.2

0.1

0.05

0.5

100

125

Ambient Temperature Ta (°C)

150

0.6

0.7

0.8

0.9

1.0

Forward Voltage V

(V)

1.1

1.2

Overcurrent Cycles

RU 2M series

Ta — I

F(AV)

Derating

1.5

— I

Characteristics

(Typical)

FMS

Peak Forward Surge Current I

FSM

(A)

Rating

FSM

(A)

Average Forward Current I

F(AV)

(A)

Forward Current I

(A)

1.2

20ms

0.9

0.1

= 150ºC

100ºC

60ºC

25ºC

0.6

0.01

0.3

100

125

Ambient Temperature Ta (°C)

150

0.001

0.1

0.3

0.5

0.7

0.9

Forward Voltage V

(V)

1.1

Overcurrent Cycles

External Dimensions

(Unit: mm)

Flammability:

UL94V-0 or Equivalent

Fig.

0.78

±0.05

Cathode Mark

62.5

±0.7

7.2

±0.2

4.0

±0.2

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RU2B相似产品对比

	RU2B	RU1	RU1A	RU1B	RU1C	RU2	RU2AM	RU2C	RU2M	RU2Z
描述	1 A, 800 V, SILICON, SIGNAL DIODE	0.25 A, SILICON, SIGNAL DIODE	0.25 A, SILICON, SIGNAL DIODE	0.25 A, 800 V, SILICON, SIGNAL DIODE	0.2 A, 1000 V, SILICON, SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE	1.1 A, SILICON, RECTIFIER DIODE	0.8 A, 1000 V, SILICON, SIGNAL DIODE	1.1 A, 400 V, SILICON, RECTIFIER DIODE	1 A, 200 V, SILICON, SIGNAL DIODE

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