RN2910FS,RN2911FS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN2910FS, RN2911FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
Unit: mm
•
•
0.35 0.35
1.0±0.05
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
•
Complementary to RN1910FS and RN1911FS
0.7±0.05
Incorporating a bias resistor into a transistor reduces parts count.
1
2
3
6
5
4
0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
0.48
-0.04
+0.02
B
R1
fS6
E
1.EMIITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
JEDEC
JEITA
―
―
2-1F1D
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
−20
−20
−5
−50
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
TOSHIBA
Weight: 0.001 g (typ.)
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability
significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
0.15±0.05
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
0.1±0.05
0.8±0.05
0.1±0.05
RN2910FS,RN2911FS
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN2910FS
RN2911FS
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
= −20
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
300
⎯
⎯
3.76
8
1.2
4.7
10
Typ.
⎯
⎯
⎯
Max
−100
−100
⎯
−0.15
⎯
5.64
12
V
pF
kΩ
Unit
nA
nA
2
2007-11-01
RN2910FS,RN2911FS
Q1, Q2 Common
RN2910FS
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (μA)
IC - VI(ON)
-10000
RN2910FS
IC - VI(OFF)
-10
Ta=100°C
25
-1
-25
EMITTER COMMON
VCE=-0.2V
-0.1
-0.1
-1
-10
-100
-1000
Ta=100°C
25
-25
-100
EMITTER COMMON
VCE=-5V
-10
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT ON VOLTAGE VI(ON) ( V)
INPUT OFF VOLTAGE VI(OFF) ( V)
RN2911FS
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
-10000
COLLECTOR CURRENT IC (μA)
RN2911FS
IC - VI(OFF)
Ta=100°C
-10
-1000
Ta=100°C
-100
EMITTER COMMON
VCE=-5V
-10
25
-1
-25
EMITTER COMMON
VCE=-0.2V
-0.1
-0.1
-1
-10
INPUT ON VOLTAGE VI(ON) ( V)
-100
25
-25
0
-0.2 -0.4 -0.6 -0.8
-1
-1.2
INPUT OFF VOLTAGE VI(OFF) ( V)
-1.4
3
2007-11-01
RN2910FS,RN2911FS
Q1, Q2 Common
RN2910FS
10000
hFE - IC
RN2910FS
VCE(sat) - IC
1000
Ta=100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
-1000
DC CURRENT GAIN hFE
-100
Ta=100°C
100
-25
25
-10
25
-25
EMITTER COMMON
IC/IB=20
EMITTER COMMON
VCE=-5V
10
-0.1
-1
-10
-100
-1
-0.1
COLLECTOR CURRENT IC (mA)
-1
-10
COLLECTOR CURRENT IC (mA)
-100
RN2911FS
10000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2911FS
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
-100
Ta=100°C
25
100
-25
EMITTER COMMON
VCE=-5V
10
-0.1
-10
25
-25
EMITTER COMMON
IC/IB=20
-1
-10
-100
-1
-0.1
COLLECTOR CURRENT IC (mA)
-1
-10
COLLECTOR CURRENT IC (mA)
-100
4
2007-11-01
RN2910FS,RN2911FS
Type Name
Marking
6
5
4
Type name
RN2910FS
H9
1
6
2
5
3
4
Type name
RN2911FS
HF
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2007-11-01
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