using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Features
•
–4 A, –30 V.
•
Low gate charge
•
High performance trench technology for extremely
low R
DS(ON)
R
DS(ON)
= 50 mΩ @ V
GS
= –10 V
R
DS(ON)
= 75 mΩ @ V
GS
= –4.5 V
Applications
•
Battery management
•
Load switch
•
Battery protection
D
D
S
1
2
G
6
5
4
SuperSOT -6
TM
D
D
3
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–30
±25
(Note 1a)
Units
V
V
A
W
°C
–4
–20
1.6
0.8
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.457
Device
Si3457DV
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
2001
Fairchild Semiconductor Corporation
Si3457DV Rev A (W)
Si3457DV
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
DS
= –24 V,
V
GS
= 25 V,
V
GS
= –25 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–30
Typ
Max Units
V
Off Characteristics
–22
–1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
GS
= –10 V,
I
D
= –4 A
V
GS
= –4.5 V, I
D
= –3.4 A
V
GS
= –10 V, I
D
= –4 A;T
J
=125°
V
GS
= –10 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –4 A
–1
–1.8
4
44
67
60
–3
V
mV/°C
50
75
70
mΩ
I
D(on)
g
FS
–20
8.4
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
470
126
61
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
7
12
16
6
14
22
29
12
8.1
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15 V,
V
GS
= –.5 V
I
D
= –4 A,
6
2.1
2
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–1.3
–0.77
–1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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