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RN2906FS

产品描述Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
产品类别分立半导体    晶体管   
文件大小165KB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN2906FS概述

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2906FS规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTANCE RATIO IS 10
最大集电极电流 (IC)0.05 A
集电极-发射极最大电压20 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)30
JESD-30 代码R-PDSO-F6
JESD-609代码e0
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
最大功率耗散 (Abs)0.05 W
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

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RN2901FS~RN2906FS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2901FS,RN2902FS,RN2903FS
RN2904FS,RN2905FS,RN2906FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
Unit: mm
1.0±0.05
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
0.7±0.05
0.35 0.35
1
2
3
6
5
4
0.1±0.05
Complementary to RN1901FS~RN1906FS
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2901FS
RN2902FS
R2
RN2903FS
RN2904FS
E
RN2905FS
RN2906FS
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
B
R1
fS6
JEDEC
JEITA
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
2-1F1D
TOSHIBA
Weight: 0.001g (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2901FS~2906FS
RN2901FS~2906FS
RN2901FS~2904FS
RN2905FS, 2906FS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
−20
−20
−10
−5
−50
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
1
2
3
Q1
Q2
Equivalent Circuit
(top view)
6
5
4
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
0.15±0.05
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
0.1±0.05
0.8±0.05
0.1±0.05

RN2906FS相似产品对比

RN2906FS RN2901FS RN2902FS RN2903FS RN2904FS RN2905FS
描述 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
包装说明 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
针数 6 6 6 6 6 6
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTANCE RATIO IS 10 BUILT-IN BIAS RESISTANCE RATIO IS 1 BUILT-IN BIAS RESISTANCE RATIO IS 1 BUILT-IN BIAS RESISTANCE RATIO IS 1 BUILT-IN BIAS RESISTANCE RATIO IS 1 BUILT-IN BIAS RESISTANCE RATIO IS 21.36
最大集电极电流 (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
集电极-发射极最大电压 20 V 20 V 20 V 20 V 20 V 20 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 30 30 30 30 30 30
JESD-30 代码 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
JESD-609代码 e0 e0 e0 e0 e0 e0
元件数量 2 2 2 2 2 2
端子数量 6 6 6 6 6 6
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.05 W 0.05 W 0.05 W 0.05 W 0.05 W 0.05 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 - - 1 1

 
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