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RN2902FE

产品描述Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
产品类别分立半导体    晶体管   
文件大小550KB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN2902FE概述

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2902FE规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)50
JESD-30 代码R-PDSO-F6
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
最大功率耗散 (Abs)0.1 W
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)200 MHz

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RN2901FE~RN2906FE
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2901FE,RN2902FE,RN2903FE
RN2904FE,RN2905FE,RN2906FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN1901FE~RN1906FE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2901FE
B
R1
R2
RN2902FE
RN2903FE
RN2904FE
E
RN2905FE
RN2906FE
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
JEDEC
JEITA
TOSHIBA
2-2N1G
Weight:0.003 g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Equivalent Circuit
Symbol
RN2901FE~
RN2906FE
RN2901FE~
RN2904FE
RN2905FE,
RN2906FE
V
CBO
V
CEO
Rating
−50
−50
−10
V
EBO
−5
I
C
RN2901FE~
RN2906FE
P
C
(Note 1)
T
j
T
stg
−100
100
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Characteristics
Collector-base voltage
Collector-emitter voltage
(top view)
6
5
4
Q1
Q2
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01

RN2902FE相似产品对比

RN2902FE RN2901FE RN2903FE RN2904FE RN2905FE RN2906FE
描述 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
是否Rohs认证 符合 符合 符合 符合 符合 符合
包装说明 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
针数 6 6 6 6 6 6
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 21.37 BUILT IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V 50 V 50 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 50 30 70 80 80 80
JESD-30 代码 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
元件数量 2 2 2 2 2 2
端子数量 6 6 6 6 6 6
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP PNP PNP PNP PNP
最大功率耗散 (Abs) 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
端子形式 FLAT FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
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