Datasheet> 器件分类 > 分立半导体> 晶体管> RN2102ACT

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RN2102ACT: 产品描述Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; 产品类别分立半导体晶体管; 文件大小185KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2102ACT概述

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2102ACT规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	CHIP CARRIER, R-XBCC-N3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接	COLLECTOR
最大集电极电流 (IC)	0.08 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	50
JESD-30 代码	R-XBCC-N3
元件数量	1
端子数量	3
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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RN2101ACT ~ RN2106ACT

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2101ACT,RN2102ACT,RN2103ACT

RN2104ACT,RN2105ACT,RN2106ACT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

0.25±0.03

Unit: mm

0.6±0.05

0.5±0.03

•

Complementary to RN1101ACT to RN1106ACT

0.25±0.03

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

２

0.35±0.02

Equivalent Circuit and Bias Resistor Values

Type No.

RN2101ACT

RN2102ACT

RN2103ACT

RN2104ACT

RN2105ACT

RN2106ACT

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

0.15±0.03

0.65±0.02

0.05±0.03

1.0±0.05

•

Incorporating a bias resistor into a transistor reduces parts count.

３

CST3

1.BASE

2.EMITTER

3.COLLECOTR

JEDEC

JEITA

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2101ACT to 2106ACT

RN2101ACT to 2104ACT

RN2105ACT, 2106ACT

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−80

100*

150

−55

to 150

Unit

°C

* : Mounted on FR4 board (10 mm

10 mm

1 mmt)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-17

0.38 +0.02

-0.03

0.05±0.03

•

Extra small package (CST3) is applicable for extra high density

fabrication.

―

RN2102ACT相似产品对比

	RN2102ACT	RN2101ACT	RN2103ACT	RN2104ACT	RN2105ACT	RN2106ACT
描述	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
包装说明	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3
针数	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 21.36	BUILT-IN BIAS RESISTOR RATIO IS 10
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	0.08 A	0.08 A	0.08 A	0.08 A	0.08 A	0.08 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	50	30	70	80	80	80
JESD-30 代码	R-XBCC-N3	R-XBCC-N3	R-XBCC-N3	R-XBCC-N3	R-XBCC-N3	R-XBCC-N3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	-	-	Toshiba(东芝)

RN2102ACT

RN2102ACT概述

RN2102ACT规格参数

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RN2102ACT相似产品对比

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