RN1972HFE,RN1973HFE
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1972HFE,RN1973HFE
Switching, Inverter Circuit, Interface Circuit and Driver
Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Complementary to RN2972HFE, RN2973HFE
Unit: mm
•
Equivalent Circuit
C
B
R1
E
JEDEC
JEITA
TOSHIBA
―
―
2−2N1A
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Absolute Maximum Ratings
(Ta = 25°C)
Weight:0.003g (typ.)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
40
40
5
100
100
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
Collector power dissipation
Junction temperature
Storage temperature range
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating
1
2007-11-01
RN1972HFE,RN1973HFE
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1972HFE
RN1973HFE
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test Condition
V
CB
=
40 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
300
⎯
⎯
⎯
17.6
37.6
Typ.
⎯
⎯
⎯
0.06
250
3
22
47
Max
100
100
⎯
0.15
⎯
⎯
26.4
56.4
V
MHz
pF
kΩ
Unit
nA
nA
2
2007-11-01
RN1972HFE,RN1973HFE
Q1,Q2 Common
RN1972HFE
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (μA)
IC - VI(ON)
10000
RN1972HFE
IC - VI(OFF)
Ta=100°C
10
1000
Ta=100°C
100
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
INPUT VOLTAGE VI(OFF) (V)
1.4
25
1
-25
EMITTER COMMON
VCE=5V
0.1
0.1
1
10
INPUT VOLTAGE VI(ON) (V)
100
25
-25
RN1973HFE
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1973HFE
IC - VI(OFF)
10
Ta=100°C
1000
Ta=100°C
100
25
1
-25
EMITTER COMMON
VCE=5V
10
100
25
-25
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
0.1
1
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
3
2007-11-01
RN1972HFE,RN1973HFE
Q1,Q2 Common
RN1972HFE
10000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1972HFE
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
100
Ta=100°C
-25
100
25
10
-25
25
EMITTER COMMON
IC/IB=20
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
RN1973HFE
10000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1973HFE
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
100
Ta=100°C
-25
100
25
10
-25
25
EMITTER COMMON
IC/IB=20
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
4
2007-11-01
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
