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RN1911FS

产品描述50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
产品类别分立半导体    晶体管   
文件大小116KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN1911FS概述

50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

50 mA, 20 V, 2 通道, NPN, 硅, 小信号晶体管

RN1911FS规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)0.05 A
集电极-发射极最大电压20 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)300
JESD-30 代码R-PDSO-F6
JESD-609代码e0
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
最大功率耗散 (Abs)0.05 W
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
RN1910FS,RN1911FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN1910FS,RN1911FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
0.35 0.35
1.0±0.05
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
Unit: mm
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Complementary to RN2910FS, RN2911FS
0.7±0.05
1
2
3
6
5
4
0.1±0.05
fS6
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
20
20
5
50
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
1. EMITTER1
(E1)
1.EMIITTER1
(E1)
2. BASE1
(B1)
2.EMITTER2
(E2)
3. COLLECTOR2
(B2)
(C2)
3.BASE2
4. EMITTER2
(E2)
4.COLLECTOR2 (C2)
5. BASE2
(B2)
5.BASE1
(B2)
6. COLEECTOR1
(C1)
6.COLLECTOR1
(C1)
2-1F1D
Weight: 0.001g (typ.)
Equivalent Circuit
(top view)
6
5
4
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Note:
Q1
Q2
1
2
3
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1910FS
RN1911FS
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
=
20 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
300
3.76
8
Typ.
1.2
4.7
10
Max
100
100
0.15
5.64
12
V
pF
Unit
nA
nA
1
2007-11-01

RN1911FS相似产品对比

RN1911FS RN1910FS
描述 50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 50 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
包装说明 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
针数 6 6
Reach Compliance Code unknow unknow
ECCN代码 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
最大集电极电流 (IC) 0.05 A 0.05 A
集电极-发射极最大电压 20 V 20 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 300 300
JESD-30 代码 R-PDSO-F6 R-PDSO-F6
JESD-609代码 e0 e0
元件数量 2 2
端子数量 6 6
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 0.05 W 0.05 W
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 TIN LEAD TIN LEAD
端子形式 FLAT FLAT
端子位置 DUAL DUAL
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON

 
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