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RN1911AFS

产品描述80 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
产品类别分立半导体    晶体管   
文件大小129KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN1911AFS概述

80 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

80 mA, 50 V, 2 通道, NPN, 硅, 小信号晶体管

RN1911AFS规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明SMALL OUTLINE, R-PDSO-F6
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)0.08 A
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)120
JESD-30 代码R-PDSO-F6
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
RN1910AFS, RN1911AFS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1910AFS, RN1911AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
Complementary to the RN2910AFS/RN2911AFS
0.48
-0.04
+0.02
Unit: mm
1.0±0.05
0.1±0.05
0.35 0.35
0.8±0.05
0.1±0.05
0.15±0.05
Unit
nA
nA
V
pF
1.0±0.05
0.7±0.05
1
2
3
6
5
4
0.1±0.05
Equivalent Circuit and Bias Resistor Values
C
R1
E
fS6
JEDEC
JEITA
TOSHIBA
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
50
50
5
80
50
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit
(top view)
6
5
4
Q2
Using continuously under heavy loads (e.g. the application of
Q1
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
1
2
3
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Note:
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1910AFS
RN1911AFS
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
120
Typ.
Max
100
100
700
0.15
3.76
8
0.7
4.7
10
5.64
12
1
2007-11-01

RN1911AFS相似产品对比

RN1911AFS RN1910AFS
描述 80 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 80 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
包装说明 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
针数 6 6
Reach Compliance Code unknow unknow
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 0.08 A 0.08 A
集电极-发射极最大电压 50 V 50 V
配置 SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 120 120
JESD-30 代码 R-PDSO-F6 R-PDSO-F6
元件数量 2 2
端子数量 6 6
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子形式 FLAT FLAT
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON

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