RN1907FS~RN1909FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1907FS, RN1908FS, RN1909FS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
Unit: mm
0.35 0.35
1.0±0.05
•
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
0.7±0.05
1
2
3
6
5
4
0.1±0.05
•
Complementary to RN2907FS~RN2909FS
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1907FS
RN1908FS
R2
RN1909FS
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
B
R1
fS6
1. EMITTER1
(E1)
1.EMIITTER1
(E1)
2. BASE1
(B1)
2.EMITTER2
(E2)
3. COLLECTOR2
(B2)
(C2)
3.BASE2
4. EMITTER2
(E2)
4.COLLECTOR2 (C2)
5. BASE2
(B2)
5.BASE1
(B2)
6. COLEECTOR1
(C1)
6.COLLECTOR1
(C1)
―
―
2-1F1D
JEDEC
JEITA
TOSHIBA
Weight: 0.001g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1907FS~
RN1909FS
RN1907FS
Emitter-base voltage
RN1908FS
RN1909FS
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1907FS~
RN1909FS
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
20
20
6
7
15
50
50
150
−55~150
mA
mW
°C
°C
1
2
3
V
Q1
Unit
V
V
Q2
Equivalent Circuit
(top view)
6
5
4
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
0.15±0.05
•
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
0.1±0.05
0.8±0.05
0.1±0.05
RN1907FS~RN1909FS
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
RN1907FS~1909FS
RN1907FS
Emitter cut-off current
RN1908FS
RN1909FS
RN1907FS
DC current gain
RN1908FS
RN1909FS
Collector-emitter
saturation voltage
RN1907FS~1909FS
RN1907FS
Input voltage (ON)
RN1908FS
RN1909FS
RN1907FS
Input voltage (OFF)
RN1908FS
RN1909FS
Collector output
capacitance
RN1907FS~1909FS
RN1907FS
Input resistor
RN1908FS
RN1909FS
RN1907FS
Resistor ratio
RN1908FS
RN1909FS
R1/R2
⎯
R1
⎯
C
ob
V
CB
=
10 V, I
E
=
0,
f
=
1 MHz
V
I (OFF)
V
CE
=
5 V, I
C
=
0.1 mA
V
I (ON)
V
CE
=
0.2 V, I
C
=
5 mA
V
CE (sat)
I
C
=
5 mA,
I
B
=
0.25 mA
h
FE
V
CE
=
5 V, I
C
=
10 mA
I
EBO
Symbol
I
CBO
I
CEO
Test Condition
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
EB
=
7 V, I
C
=
0
V
EB
=
15 V, I
C
=
0
Min
⎯
⎯
0.088
0.085
0.182
120
120
100
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
Max
100
500
0.131
0.126
0.271
⎯
mA
Unit
nA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
10
22
47
0.213
0.468
2.14
⎯
⎯
0.15
1.5
2.2
5.0
1.0
1.1
2.6
V
V
V
⎯
0.7
0.8
1.6
0.5
0.6
1.3
⎯
8
17.6
37.6
0.17
0.374
1.71
⎯
12
26.4
56.4
0.255
0.562
2.56
pF
kΩ
2
2007-11-01
RN1907FS~RN1909FS
(Q1, Q2 Common)
RN1907FS
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1907FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
1000
Ta=100°C
25
-25
Ta=100°C
10
25
1
-25
COMMON EMITTER
VCE=0.2V
100
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
RN1908FS
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1908FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
10
Ta=100°C
1000
Ta=100°C
25
-25
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
100
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
INPUT VOLTAGE VI(OFF) (V)
RN1909FS
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
RN1909FS
IC - VI(OFF)
COMMON EMITTER
VCE=5V
COLLECTOR CURRENT IC (μA)
10
Ta=100°C
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
1000
Ta=100°C
25
-25
100
10
0.6
1
1.4
1.8
2.2
2.6
3
INPUT VOLTAGE VI(OFF) (V)
3
2007-11-01
RN1907FS~RN1909FS
(Q1, Q2 Common)
RN1907FS
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
Ta=100°C
DC CURRENT GAIN hFE
hFE - IC
1000
COMMON EMITTER
IC / IB = 20
RN1907FS
VCE(sat) - IC
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
RN1908FS
100
RN1908FS
1000
Ta=100°C
hFE - IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
1000
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
DC CURRENT GAIN hFE
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
100
COLLECTOR CURRENT IC (mA)
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
RN1909FS
1000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1909FS
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
DC CURRENT GAIN hFE
Ta=100°C
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
4
2007-11-01
RN1907FS~RN1909FS
Type Name
Marking
6
5
4
Type name
RN1907FS
F6
1
6
2
5
3
4
Type name
RN1908FS
F7
1
6
RN1909FS
2
5
3
4
Type name
F8
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2007-11-01
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