Datasheet> 器件分类 > 分立半导体> 晶体管> RN1903FE

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RN1903FE: 产品描述Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; 产品类别分立半导体晶体管; 文件大小538KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/; 标准

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RN1903FE概述

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1903FE规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70
JESD-30 代码	R-PDSO-F6
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
最大功率耗散 (Abs)	0.1 W
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz

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RN1901FE~RN1906FE

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN1901FE, RN1902FE, RN1903FE

RN1904FE, RN1905FE, RN1906FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

Complementary to RN2901FE to RN2906FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1901FE

RN1902FE

RN1903FE

RN1904FE

RN1905FE

RN1906FE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

―

2-2N1G

Weight: 3 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

Symbol

RN1901FE to

RN1906FE

RN1901FE to

RN1904FE

RN1905FE,

RN1906FE

CBO

CEO

Rating

EBO

Unit

Characteristics

Collector-base voltage

Collector-emitter voltage

(top view)

Emitter-base voltage

(Note

stg

100

150

−55

to 150

°C

Collector current

Collector power dissipation RN1901FE to

RN1906FE

Junction temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2010-05-14

RN1903FE相似产品对比

	RN1903FE	RN1901FE	RN1902FE	RN1904FE	RN1905FE	RN1906FE
描述	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
是否Rohs认证	符合	符合	符合	符合	符合	符合
包装说明	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
针数	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 21.37	BUILT IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70	30	50	80	80	80
JESD-30 代码	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
元件数量	2	2	2	2	2	2
端子数量	6	6	6	6	6	6
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
厂商名称	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	-

RN1903FE

RN1903FE概述

RN1903FE规格参数

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RN1903FE相似产品对比

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