Datasheet> 器件分类 > 分立半导体> 晶体管> RN1112ACT

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RN1112ACT: 产品描述Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications; 产品类别分立半导体晶体管; 文件大小150KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1112ACT概述

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1112ACT规格参数

参数名称	属性值
包装说明	CHIP CARRIER, R-XBCC-N3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR
外壳连接	COLLECTOR
最大集电极电流 (IC)	0.08 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120
JESD-30 代码	R-XBCC-N3
元件数量	1
端子数量	3
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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RN1112ACT, RN1113ACT

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1112ACT,RN1113ACT

Switching Applications

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

1.0±0.05

•

0.6±0.05

0.5±0.03

Unit: mm

0.25±0.03

１

0.25±0.03

２

•

Complementary to RN2112ACT, RN2113ACT

Equivalent Circuit and Bias Resistor Values

0.35±0.02

0.15±0.03

0.65±0.02

0.05±0.03

•

Incorporating a bias resistor into a transistor reduces the number of parts,

which enables the manufacture of ever more compact equipment and

saves assembly cost.

３

1.BASE

CST3

2.EMITTER

3.COLLECOTR

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

(Note1)

stg

Rating

100

150

−55

to 150

Unit

°C

JEDEC

JEITA

TOSHIBA

―

2-1J1A

Weight:0.75 mg (typ.)

Note1: Mounted on FR4 board (10 mm

10 mm

1 mmt)

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-13

0.38 +0.02

-0.03

0.05±0.03

RN1112ACT相似产品对比

	RN1112ACT	RN1113ACT
描述	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
包装说明	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3
针数	3	3
Reach Compliance Code	unknow	unknow
ECCN代码	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
外壳连接	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	0.08 A	0.08 A
集电极-发射极最大电压	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	120	120
JESD-30 代码	R-XBCC-N3	R-XBCC-N3
元件数量	1	1
端子数量	3	3
封装主体材料	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER
极性/信道类型	NPN	NPN
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	NO LEAD	NO LEAD
端子位置	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

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