Datasheet> 器件分类 > 分立半导体> 晶体管> RN1109ACT

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RN1109ACT: 产品描述Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; 产品类别分立半导体晶体管; 文件大小159KB，共6页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1109ACT概述

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1109ACT规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	CHIP CARRIER, R-XBCC-N3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 0.47
外壳连接	COLLECTOR
最大集电极电流 (IC)	0.08 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70
JESD-30 代码	R-XBCC-N3
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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RN1107ACT ~ RN1109ACT

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1107ACT, RN1108ACT, RN1109ACT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Extra small package(CST3) is applicable for extra high density

fabrication.

Incorporating a bias resistor into a transistor reduces the number of parts,

which enables the manufacture of ever more compact equipment and

saves assembly cost.

Complementary to RN2107ACT to RN2109ACT

Unit: mm

TOP View

0.6±0.05

0.5±0.03

0.25±0.03

３

0.65±0.02

１

0.25±0.03

２

0.35±0.02

0.15±0.03

1.0±0.05

•

Equivalent Circuit and Bias Resistor Values

Type No.

RN1107ACT

RN1108ACT

RN1109ACT

R1 (kΩ)

R2 (kΩ)

0.05±0.03

CST3

JEDEC

JEITA

TOSHIBA

1.BASE

2.EMITTER

3.COLLECTOR

―

2-1J1A

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1107ACT to RN1109ACT

RN1107ACT

Emitter-base voltage

RN1108ACT

RN1109ACT

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1107ACT to RN1109ACT

(Note1)

stg

EBO

Symbol

CBO

CEO

Rating

100

150

−55

to 150

Weight: 0.75 mg (typ.)

Unit

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1 : Mounted on FR4 board (10 mm

10 mm

1 mmt)

2009-04-13

0.38 +0.02

-0.03

0.05±0.03

RN1109ACT相似产品对比

	RN1109ACT	RN1107ACT	RN1108ACT
描述	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
包装说明	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3
针数	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 2.14
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	0.08 A	0.08 A	0.08 A
集电极-发射极最大电压	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70	80	80
JESD-30 代码	R-XBCC-N3	R-XBCC-N3	R-XBCC-N3
元件数量	1	1	1
端子数量	3	3	3
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
极性/信道类型	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD
端子位置	BOTTOM	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
厂商名称	Toshiba(东芝)	Toshiba(东芝)	-

RN1109ACT

RN1109ACT概述

RN1109ACT规格参数

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RN1109ACT相似产品对比

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