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HN2C26FS

产品描述Frequency General-Purpose Amplifier Applications
文件大小141KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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HN2C26FS概述

Frequency General-Purpose Amplifier Applications

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HN2C26FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN2C26FS
Frequency General-Purpose Amplifier Applications
Unit: mm
Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package
High voltage
High current
High h
FE
: V
CEO
= 50 V
: I
C
= 100 mA (max)
1.0±0.05
0.7±0.05
0.1±0.05
0.35 0.35
1.0±0.05
0.8±0.05
0.1±0.05
0.15±0.05
: h
FE
= 120 to 400
: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
1
2
3
6
5
4
0.1±0.05
Excellent h
FE
linearity
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
Rating
60
50
5
100
30
50
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
0.48
-0.04
+0.02
fS6
1. EMITTER1
2. EMITTER2
3. BASE2
4. COLLECTOR2
5. BASE1
6. COLLECTOR1
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
JEDEC
JEITA
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-1F1C
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.001 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Note:
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
120
60
Typ.
0.1
0.95
Max
0.1
0.1
400
0.25
Unit
μA
μA
V
MHz
pF
Note: h
FE
Classification
( ) Marking symbol
Y (F): 120 to 240, GR (H): 200 to 400
Marking
Type Name
h
FE
Rank
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
NF
1
2
3
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