电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

HN1C26FS

产品描述Frequency General-Purpose Amplifier Applications
文件大小141KB,共3页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 全文预览

HN1C26FS概述

Frequency General-Purpose Amplifier Applications

文档预览

下载PDF文档
HN1C26FS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
HN1C26FS
Frequency General-Purpose Amplifier Applications
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
High voltage : V
CEO
= 50 V
High current : I
C
= 100 mA (max)
: h
FE
= 120 to 400
High h
FE
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
Unit: mm
1.0±0.05
0.1±0.05
0.35 0.35
0.8±0.05
0.1±0.05
0.15±0.05
1.0±0.05
0.7±0.05
1
2
3
6
5
4
0.1±0.05
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
Rating
60
50
5
100
30
50
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
0.48
-0.04
+0.02
fS6
JEDEC
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Using continuously under heavy loads (e.g. the application of
JEITA
high temperature/current/voltage and the significant change in
TOSHIBA
2-1F1D
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.001 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating.
Note:
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
120
60
Typ.
0.1
0.95
Max
0.1
0.1
400
0.25
Unit
μA
μA
V
MHz
pF
Note: h
FE
Classification
( ) Marking symbol
Y (F): 120 to 240, GR (H): 200 to 400
Marking
Type Name
h
FE
Rank
Equivalent Circuit
(top view)
6
5
4
7F
Q1
Q2
1
2
3
1
2008-12-01

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1927  2145  967  590  113  24  53  54  26  13 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved