Sirenza Microdevices’ SBA-5089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. Only a single
positive supply voltage, DC-blocking capacitors, a bias resistor,
and an optional RF choke are required for operation.
Gain & Return Loss
30
20
10
0
-10
-20
-30
-40
0
1
2
3
Frequency (GHz)
4
5
6
S11
S22
S21
SBA-5089
DC-5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• IP3 = 34.0dBm @ 1950MHz
• Pout=13.0 dBm @-45dBc ACP IS-95 1950MHz
•
Robust 1000V ESD, Class 1C
• Operates From Single Supply
• Patented Thermal Design
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite Terminals
U nits
dB
dB m
dB m
dB m
MHz
dB
dB
dB
V
mA
°C /W
1950 MHz
1950 MHz
1950 MHz
4.5
72
14.0
9.0
Frequency
850 MHz
1950 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950 MHz
Min.
18.5
16.5
18.0
32.0
Typ.
20.0
18.0
19.7
19.5
36.0
34.0
13.0
4400
20.0
11.0
4.5
4.9
80
70
5.5
5.3
88
Max.
21.5
19.5
Symbol
G
P
1dB
OIP
3
P
OUT
Parameter
Small Si gnal Gai n
Output Power at 1dB C ompressi on
Output Thi rd Order Intercept Poi nt
Output Power @ -45dBc AC P IS-95
9 Forward C hannels
Bandwi dth
D etermi ned by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noi se Fi gure
D evi ce Operati ng Voltage
D evi ce Operati ng C urrent
Thermal Resi stance (juncti on to lead)
Test Conditions:
V
S
= 8 V
R
BIAS
= 39 Ohms
I
D
= 80 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or components and reflect the approximate performance of the products as measured by
those tests. Any difference in circuit implementation, test software, or test equipment may affect actual performance. The information provided herein is believed to be reliable at press time and Sirenza Microdevices assumes no responsibility for the use of
this information. All such use shall be entirely at the user’s own risk. Prices and specifications for Sirenza Microdevices’ products are subject to change without notice. Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale
for Sirenza’s limited warranty with regard to its products. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support
devices and/or systems.
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102743 Rev. C
Preliminary
SBA-5089 DC-5 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Frequency (MHz)
Frequency (MHz)
Symbol
Parameter
Unit
100
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
21
NF
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V=
V
V
SS
=88V
R
BIAS
39 Ohms
R
BIAS
== 39 Ohms
dB
dB m
dB m
dB
dB
dB
dB
20.5
36.3
19.8
29
27
22
4.1
20.2
35.8
19.8
27
21
22
4.3
19.9
36.0
19.7
25
17
23
4.2
18.0
34.0
19.5
20
11
23
4.5
17.1
32.7
18.8
17
11
23
----
15.3
30.9
17.1
11.8
11
23
----
Test Conditions:
Test Conditions:
I 80 mA Typ.
I
DD
==80 mA Typ.
TT
L
= 25ºC
= 25ºC
L
OIP Tone Spacing
MHz, Pout per tone
dBm
OIP
3 3
Tone Spacing ==11MHz, Pout per tone ==00dBm
ZZ
S
= Z
L
=50 Ohms
= Z
L
= 50 Ohms
S
Absolute Maximum Ratings
Noise Figure vs. Frequency
6
Noise Figure (dB)
5
4
3
2
0
0.5
1
1.5
Frequency (GHz)
2
+25c
-40c
+85c
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Power
Max Operating Dissipated
Power
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Absolute Limit
1
30
mA
6V
+17 dBm
0.65 W
+150°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
T
L
=T
LEAD
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
O
3
vs. Frequency
IP
38
36
OIP
3
(dBm)
34
32
30
28
26
0
0.5
1
1.5
2
2.5
3
3.5
+25c
-40c
+85c
P1dB vs. Frequency
21
20
P
1dB
(dBm)
19
18
17
16
15
0
0.5
1
1.5
2
2.5
3
3.5
+25c
-40c
+85c
Frequency (G z)
H
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
Frequency (GHz)
http://www.sirenza.com
EDS-102743 Rev. C
Preliminary
SBA-5089 DC-5 GHz Cascadable MMIC Amplifier
|S
11
| vs. Frequency
0
25
|S
21
| vs. Frequency
-10
s11 (dB)
s21 (dB)
+25c
-40c
+85c
20
15
-20
10
+25c
-30
5
-40c
+85c
-40
0
1
2
3
Frequency (GHz)
4
5
6
0
0
1
2
3
4
5
6
Frequency (GHz)
|S
12
| vs. Frequency
-10
|S
22
| vs. Frequency
0
+25c
-40c
+85c
-15
-10
s22 (dB)
s12 (dB)
-20
-20
-25
-30
+25c
-40c
+85c
-30
0
1
2
3
Frequency (GHz)
4
5
6
-40
0
1
2
3
Frequency (GHz)
4
5
6
IS-95 @850M
Hz
Adj. Channel Pwr. vs. Channel output Pwr.
-30
-35
-40
-45
-50
-55
-60
-65
-70
6
8
10
12
dBm
14
-30
-35
-40
-45
-50
-55
-60
-65
-70
6
IS-95 @ 1950MHz
Adj. Channel Pwr. vs. Channel Output Power
dBc
dBc
+25c
-40c
+85c
+25c
-40c
+85c
16
8
10
12
dBm
14
16
303 South Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102743 Rev. C
Preliminary
SBA-5089 DC-5 GHz Cascadable MMIC Amplifier
Basic Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Frequency (Mhz )
Reference
Designator
500
850
1950
2400
3500
V
S
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
1
SBA-5089
3
2
C
B
4
RF out
Recommended Bias Resistor Values for I
D
=80mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
7.5 V
33
8V
39
10 V
68
12 V
91
V
S
R
BIAS
Note: R
BIAS
provides DC bias stability over temperature.
1 uF
1000 pF
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
BA5
C
B
L
C
C
D
C
B
Pin #
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. Use via holes
for best performance to reduce lead
inductance as close to ground leads as
possible.
Part Identification Marking
The part will be marked with an “BA5” designator on
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