UH1A
THRU
UH1D
Surface Mount Ultrafast Rectifiers
FEATURES
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
100V-200V
1.0A
Mechanical Data
Case:
DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
UH1B
HB
100
UH1C
HC
150
1.0
30
- 55 to + 175
UH1D
HD
200
V
A
A
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
I
F
= 0.6 A
I
F
= 1.0 A
I
F
= 0.6 A
I
F
= 1.0 A
Reverse current
(2)
Maximum reverse recovery time
Typical reverse recovery time
Typical softness factor (t
b
/t
a
)
Typical reverse recovery current
Typical stored charge
Typical junction capacitance
4.0 V, 1 MHz
I
F
= 1.0 A, dI/dt = 200 A/µs,
V
R
= 200 V
T
A
= 125 °C
rated V
R
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
I
F
= 1.0 A, dI/dt = 50 A/µs,
V
R
= 30 V, I
rr
= 0.1 I
RM
TEST CONDITIONS
T
A
= 25 °C
V
F
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R
SYMBOL
TYP.
0.90
0.96
0.70
0.76
-
7.5
13
T
A
= 25 °C
t
rr
21
S
I
RM
Q
rr
C
J
0.8
2.7
35
17
30
-
4.0
-
-
-
A
nC
pF
MAX.
-
1.05
V
-
0.90
1.0
25
25
ns
µA
UNIT
Instantaneous forward voltage
(1)
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com
UH1A
THRU
UH1D
Surface Mount Ultrafast Rectifiers
RATINGS AND CHARACTERISTIC CURVES
1.2
100V-200V
1.0A
UH1A
1000
THRU
UH1D
Average Forward Rectified Current (A)
1.0
Instantaneous Reverse Current (µA)
100
T
A
= 175 °C
T
A
= 150 °C
0.8
10
T
A
= 125 °C
T
A
= 100 °C
0.6
T
L
Measured
at the Cathode Band Terminal
1
0.4
0.2
0.1
T
A
= 25 °C
0
95
105
115
125
135
145
155
165
175
0.01
10
20
30
40
50
60
70
80
90
100
Lead Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics
1.0
0.9
D = 0.3
D = 0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
D = t
p
/T
t
p
T
D = 0.1
D = 1.0
D = 0.5
D = 0.8
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Average Power Loss (W)
0.8
Junction Capacitance (pF)
10
1
0.1
1
10
100
Average Forward Current (A)
Reverse
Voltage
(V)
Figure 2. Forward Power Loss Characteristics
Figure 5. Typical Junction Capacitance
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
Junction to Ambient
10
T
A
= 125 °C
T
A
= 150 °C
100
1
T
A
= 175 °C
T
A
= 100 °C
0.1
10
T
A
= 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.01
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Transient Thermal Impedance
E-mail: sales@taychipst.com
2 of 2
Web Site: www.taychipst.com
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