Mitsubishi Semiconductors
Preliminary
Specifications are subject to change without notice.
MGFS38E2527-01
2.5 - 2.7GHz HBT MMIC MODULE
Outline Drawing
DESCRIPTION
MGFS38E2527 is a GaAs RF amplifier designed
for WiMAX CPE.
4.0
DIM in mm
1.0
FEATURES
•
•
•
•
•
•
•
•
InGaP HBT Device
5V Operation
28.5dBm Linear Output Power (64QAM, EVM=2.5%)
36dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit Step Attenuator
Surface Mount Package
RoHS Compliant Package
4.0
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004
IEEE802.16e-2005
GND
1
2
3
4
5
1
2
3
4
5
6
7
8
9
10
Pin
Vc1, Vcb
Vc2
Vc3
Vc4
Pout
Vdet
GND
Vref
Vcont
X-ray Top View
FUNCTIONAL BLOCK DIAGRAM
Gain control
Pin
Vcont
(0V/3.3V)
Power
Detector
Vc1,Vcb
(5V)
Bias Circuit
Detector Circuit
Pout
Vdet
Vc2(5V) Vref(2.85V)
Vc3(5V) Vc4(5V)
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always
the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of
substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORPORATION
(1/21)
Rev. 0.5
May -2010
Mitsubishi Semiconductors
Preliminary
Specifications are subject to change without notice.
MGFS38E2527-01
2.5 - 2.7GHz HBT MMIC MODULE
ABSOLUTE MAXIMUM RATINGS
Symbol
Vc1,Vc2,Vc3,
Vc4,Vcb
Vref
Vcont
Ic1+Icb
Ic2
Ic3
Ic4
Pin
Tc(op)
Tstg
-
Parameter
Collector Supply Voltage
Reference Voltage
ATT Control Voltage
Conditions
Pout28.5dBm
Pout28.5dBm
Pout28.5dBm
Value
Min.
-
-
-
Max.
8
3
3.5
50
100
200
800
3
+85
+125
50
Unit
V
V
V
mA
mA
mA
mA
dBm
C
C
%
Operation Current
Input Power
Operation Temperature
Storage Temperature
Duty Cycle
Pout28.5dBm
Pout28.5dBm
Pout28.5dBm
-
Pout28.5dBm
-
-40
-40
-
*NOTE :
Ta=25C unless otherwise noted,
Zin=Zout=50
Each maximum rating is guaranteed independently.
Please take care that MGFS38E2527 is operated under these conditions at the worst
case on your terminal.
ELECTRICAL CHARACTERISTICS
Value
Symbol
f
Gp
EVM
Vdet
ATT**
Ict
Parameter
Frequency
Gain
EVM
Power Detector Voltage
Control Gain Step
Operating Current
Vc1=Vc2=Vc3=Vc4=5V,
Vref=2.85V, Vcont=0V
Pout=28.5dBm
64QAM OFDM Modulation
Duty Cycle <= 50%
Test Conditions
Min
2500
36.0
2.5
1.5
25
950
Typ
Max
2700
MHz
dB
%
V
dB
mA
Unit
*NOTE :
Ta=25C unless otherwise noted,
Zin=Zout=50
**
ATT=Gain(@Vcont=0V)－Gain(@Vcont=3.3V)
ESD RATING : TBD
MOISTURE SENSITIVITY LEVEL : TBD
MITSUBISHI ELECTRIC CORPORATION
(2/21)
Rev. 0.5
May -2010
Mitsubishi Semiconductors
Preliminary
Specifications are subject to change without notice.
MGFS38E2527-01
2.5 - 2.7GHz HBT MMIC MODULE
PERFORMANCE DATA
(WiMAX OFDM 64QAM signal input)
Vc=5V,
Vref=2.85V,
Vcont=0V, Duty Cycle=50%, Ta=25deg.C
Gain vs. Output Power
40
38
36
34
Gain (dB)
Operating Current vs. Output Power
1200
1000
800
Ict (mA)
600
400
200
0
2.5GHz
2.6GHz
2.7GHz
32
30
28
26
24
22
20
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
2.5GHz
2.6GHz
2.7GHz
20
21
22
23
24
25
26
27
28
29
30
31
32
Output Power(dBm)
EVM vs. Output Power
10.0
9.0
8.0
7.0
6.0
EVM (%)
5.0
4.0
3.0
2.0
1.0
0.0
20 21
22 23 24 25 26 27 28 29 30
Output Power(dBm)
31 32
2.5GHz
2.6GHz
2.7GHz
Detector Voltage vs. Output Power
3.0
2.5
2.0
Vdet (V)
1.5
1.0
0.5
0.0
20
21
22
23
24
25
26
27
28
29
30
31
32
2.5GHz
2.6GHz
2.7GHz
Output Power(dBm)
ACP Characteristics
-15
-15
2.5GHz
2.6GHz
2.7GHz
-20
ACP @10.5MHz (dBm)
-25
ACP @11.5MHz (dBm)
2.5GHz
2.6GHz
2.7GHz
-20
-25
-30
-30
-35
-35
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(3/21)
Rev. 0.5
May -2010
Mitsubishi Semiconductors
Preliminary
Specifications are subject to change without notice.
MGFS38E2527-01
2.5 - 2.7GHz HBT MMIC MODULE
Attenuation Performance
40
35
30
25
Gain(dB)
20
15
10
5
0
2.0
2.2
2.4
freq.(GHz)
2.6
2.8
3.0
Vcont=0V
Vcont=3.3V
MITSUBISHI ELECTRIC CORPORATION
(4/21)
Rev. 0.5
May -2010
Mitsubishi Semiconductors
Preliminary
Specifications are subject to change without notice.
MGFS38E2527-01
2.5 - 2.7GHz HBT MMIC MODULE
Vc=5V, Vref=2.85V, Vcont=0V, Duty Cycle=50%,
f=2.5GHz
Gain vs. Output Power
40
38
36
34
Gain (dB)
Operating Current vs. Output Power
1200
1000
800
Ict (mA)
600
400
200
0
32
30
28
26
24
22
20
20
21
22
23
24
25
26
27
28
29
30
31
32
-40deg.C
-30deg.C
0deg.C
25deg.C
65deg.C
85deg.C
-40deg.C
-30deg.C
0deg.C
25deg.C
65deg.C
85deg.C
20
21
22
23
24
25
26
27
28
29
30
31
32
Output Power(dBm)
Output Power(dBm)
EVM vs. Output Power
10
9
8
7
EVM (%)
6
5
4
3
2
1
0
20 21 22
23 24 25 26 27 28
Output Power(dBm)
29 30 31 32
-40deg.C
-30deg.C
0deg.C
25deg.C
65deg.C
85deg.C
Detector Voltage vs. Output Power
3.0
2.5
2.0
Vdet (V)
1.5
1.0
0.5
0.0
20
21
22
23
24
25
26
27
28
29
30
31
32
-40deg.C
-30deg.C
0deg.C
25deg.C
65deg.C
85deg.C
Output Power(dBm)
ACP Characteristics
-15
-40deg.C
-30deg.C
0deg.C
25deg.C
65deg.C
85deg.C
-15
-40deg.C
-30deg.C
0deg.C
25deg.C
65deg.C
85deg.C
-20
ACP@10.5MHz (dBm)
-20
ACP@11.5MHz (dBm)
-25
-25
-30
-30
-35
-35
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
-40
20 21 22 23 24 25 26 27 28 29 30 31 32
Output Power(dBm)
Output Power(dBm)
MITSUBISHI ELECTRIC CORPORATION
(5/21)
Rev. 0.5
May -2010
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