< Low Noise GaAs HEMT >
MGF4953A
Leadless ceramic package
DESCRIPTION
The MGF4953A super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in C to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain
@ f=12GHz
Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel
10,000pcs/reel
RoHS COMPLIANT
MGF4953A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
PT
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
(Ta=25C )
Ratings
-3
-3
60
50
125
-55 to +125
(Ta=25C )
Unit
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
GSS
I
DSS
V
GS(off)
Gs
Parameter
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Test conditions
MIN.
IG=-10A
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500A
VDS=2V,
-3
--
15
-0.1
12.0
--
Limits
TYP.
--
--
--
--
13.5
0.35
MAX
--
50
60
-1.5
--
0.50
Unit
V
A
mA
V
dB
dB
ID=7.5mA,f=12GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Apr., 2011
1
< Low Noise GaAs HEMT >
MGF4953A
Leadless ceramic package
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Publication Date : Apr., 2011
5
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