< Low Noise GaAs HEMT >
MGF4941AL
Micro-X type plastic package
DESCRIPTION
The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in Ku band amplifiers.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain
@ f=12GHz
Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
L to K band low noise amplifiers
QUALITY GRADE
GG
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
V
DS
=2V, I
D
=10mA
ORDERRING INFORMATION
Tape & reel
4000pcs./reel
RoHS COMPLIANT
MGF4941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
PT
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
(Ta=25°C )
Ratings
-3
-3
IDSS
50
125
-55 to +125
(Ta=25°C )
Unit
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
GSS
I
DSS
V
GS(off)
Gs
Parameter
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Test conditions
MIN.
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,
-3
--
15
-0.1
12.0
--
Limits
TYP.
--
--
--
--
13.5
0.35
MAX
--
50
60
-1.5
--
0.5
Unit
V
µA
mA
V
dB
dB
ID=10mA,f=12GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Apr., 2011
1
<Low Noise GaAs HEMT>
MGF4941AL
Micro-X type plastic package
Fig.1
3.2±0.1
(0.30)
2.6±0.1
0.5±0.1
(0.30)
Bottom
(2.3)
(0.30)
0.65±0.1
2.6±0.1
3.2±0.1
Top
①
②
rAA
③
2.2±0.1
1.7±0.1
②
(0.30)
Unit : mm
Side
0.15±0.05
1.35±0.2
① Gate
② Source
③ Drain
(GD-32)
Publication Date : Apr., 2011
2
(2.3)
A
<Low Noise GaAs HEMT>
MGF4941AL
Micro-X type plastic package
TYPICAL CHARACTERISTICS
(Ta=25°C)
I
D
vs. V
DS
50
V
GS
=-0.1V /STEP
I
D
vs. V
GS
50
V
DS
=2V
I
D
(mA)
40
DRAIN CURRENT, I
D
(mA)
0
1
2
3
40
30
DRAIN CURRENT
30
20
20
10
10
0
0
-1.0
-0.5
0.0
Drain to Source voltage V
DS
(V)
Gate to Source voltage, V
GS
(V)
NF & Gs vs
.
I
D
1.2
16
V
DS
=2V
f =12GHz
NOISE FIGURE, NF (dB)
Gs
0.8
12
0.6
NF
10
0.4
8
0.2
0
5
10
15
20
6
DRAIN CURRENT, ID (mA)
Publication Date : Apr., 2011
3
ASSOCIATED GAIN, Gs (dB)
1.0
14
<Low Noise GaAs HEMT>
MGF4941AL
Micro-X type plastic package
S PARAMETERS
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
(VDS=2V,ID=10mA,Ta=room temperature)
S11
S21
S12
S22
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
0.997
-18.3
5.603
158.4
0.023
73.4
0.702
-11.1
0.976
-30.0
5.399
145.6
0.033
67.2
0.668
-20.1
0.944
-41.7
5.195
132.7
0.043
61.0
0.634
-29.1
0.880
-53.4
4.991
119.8
0.053
54.8
0.600
-38.1
0.804
-67.6
4.874
105.3
0.064
46.8
0.563
-47.6
0.728
-82.3
4.743
90.7
0.074
39.0
0.519
-57.2
0.640
-98.0
4.569
76.0
0.082
31.0
0.467
-66.6
0.563 -116.4 4.389
61.2
0.091
22.3
0.406
-77.4
0.476 -134.2 4.123
47.5
0.095
15.2
0.343
-86.1
0.408 -153.5 3.898
34.7
0.095
9.9
0.285
-94.4
0.381 -174.5 3.736
22.2
0.101
5.8
0.245 -105.3
0.370
163.2
3.559
9.8
0.105
1.9
0.203 -119.0
0.385
141.3
3.391
-2.6
0.110
-3.1
0.167 -137.9
0.415
124.1
3.275
-14.2
0.113
-5.8
0.156 -157.0
0.458
109.1
3.148
-26.2
0.117
-10.7
0.153
178.7
0.529
94.8
2.961
-40.7
0.131
-15.1
0.214
144.7
0.586
83.3
2.817
-53.4
0.142
-19.9
0.257
125.9
0.643
73.3
2.620
-65.9
0.153
-26.4
0.317
106.1
(V
DS
=2V,I
D
=10mA, Ta=room temperature)
Γopt
Rn
(mag)
(ang)
(Ω)
0.96
-32.8
17.0
0.93
-17.9
15.5
0.90
-3.0
14.0
0.84
11.9
12.5
0.79
26.8
11.0
0.74
41.7
9.5
0.65
56.6
8.0
0.53
73.6
6.0
0.44
92.6
4.5
0.34
113.6
3.5
0.28
136.5
2.5
0.25
161.2
2.5
0.25
-172.3
2.5
Measurement plane (2.6mm)
0.27
-144.2
3.0
0.33
-122.0
4.0
Recommended foot pattern;
0.44
-97.0
5.6
RO4003C/Rogers (εr=3.38, t=0.508mm)
0.55
-73.0
7.0
0.66
-47.0
8.7
Noise Parameter
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
NFmin
(dB)
0.18
0.19
0.19
0.20
0.23
0.24
0.26
0.29
0.31
0.34
0.37
0.40
0.45
0.50
0.55
0.61
0.66
0.72
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Apr., 2011
4
<Low Noise GaAs HEMT>
MGF4941AL
Micro-X type plastic package
S PARAMETERS
(VDS=2V,ID=10mA,Ta=room temperature)
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
S11
(mag)
(ang)
0.989
-13.9
0.967
-28.2
0.929
-41.5
0.882
-54.4
0.822
-65.9
0.757
-79.5
0.686
-93.3
0.611 -108.8
0.533 -125.1
0.463 -143.6
0.411 -164.1
0.382
174.7
0.378
152.3
0.395
131.4
0.435
113.6
0.486
99.0
0.543
86.2
0.603
73.7
0.663
61.2
0.704
50.1
0.746
40.5
0.778
32.3
S21
(mag)
(ang)
5.497
164.6
5.416
149.6
5.278
135.0
5.172
121.5
4.932
108.0
4.959
94.1
4.826
80.4
4.732
66.8
4.587
53.6
4.403
40.5
4.140
27.8
4.010
15.6
3.782
3.3
3.653
-9.1
3.514
-21.3
3.366
-32.9
3.172
-45.3
3.049
-57.7
2.877
-70.2
2.641
-81.3
2.470
-91.5
2.311 -102.3
S12
(mag)
(ang)
0.017
78.9
0.028
70.9
0.040
61.7
0.051
53.3
0.061
45.9
0.071
37.6
0.080
29.9
0.086
22.7
0.092
16.2
0.096
10.2
0.100
4.8
0.105
0.1
0.111
-4.7
0.115
-9.7
0.121
-14.6
0.126
-19.8
0.133
-25.5
0.140
-31.2
0.147
-37.9
0.152
-45.0
0.156
-52.4
0.156
-58.0
S22
(mag)
0.637
0.626
0.610
0.586
0.572
0.538
0.502
0.456
0.408
0.359
0.311
0.267
0.221
0.182
0.152
0.134
0.139
0.183
0.251
0.309
0.363
0.411
(ang)
-10.6
-21.1
-31.1
-40.5
-50.8
-60.3
-69.8
-78.6
-86.5
-93.8
-100.7
-108.9
-119.3
-135.4
-157.0
177.7
145.4
115.8
95.1
80.2
70.0
59.8
Board:
εr=2.2
NOISE PARAMETERS
Freq.
(GHz)
2
4
6
8
10
12
14
16
18
20
22
Γopt
(mag)
0.671
0.598
0.537
0.474
0.399
0.329
0.299
0.349
0.392
0.432
0.467
(VDS=2V,ID=10mA, Ta=25°C)
Thickness: 0.25mm
(4-φ0.3: through-hole)
Reference
point
Reference
NFmin
(ang)
(dB)
13.9
0.370
0.20
37.2
0.262
0.22
60.8
0.197
0.25
86.2
0.155
0.29
119.2
0.102
0.32
147.6
0.062
0.35
173.6
0.069
0.40
-143.9
0.083
0.49
-106.5
0.109
0.59
-73.0
0.146
0.73
-42.7
0.180
0.96
Note: rn is normarised by 50 ohm.
rn
0.74
(Unit: mm)
2.60
(1.0mm)
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Apr., 2011
5
1.30
2.08
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