MITSUBISHI SEMICONDUCTORS <HVIC>
M81736FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81736FP is high voltage Power MOSFET and IGBT
module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES
●FLOATING
SUPPLY VOLTAGE
½½½½½½½½600V
●OUTPUT
CURRENT
½½½½½½½½+200mA/-350mA
●HALF
BRIDGE DRIVER
●UNDERVOLTAGE
LOCKOUT
●SOP-8
PACKAGE
APPLICATIONS
MOSFET and IGBT module inverter driver for PDP, HID
lamp, refrigerator, air-conditioner, washing machine, AC
servomotor and general purpose.
1.Vcc
2.HIN
3.LIN
4.GND
8.V
B
7.HO
6.V
S
5.LO
Outline:
8P2S
BLOCK DIAGRAM
May. 2010
MITSUBISHI SEMICONDUCTORS <HVIC>
M81736FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C unless otherwise specified)
Symbol
V
B
V
S
V
BS
V
HO
V
CC
V
LO
V
IN
Pd
K
θ
Rth(j-c)
Tj
Topr
Tstg
TL
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
Solder Heatproof
Test conditions
Ratings
-0.5 ~ 624
V
B
-24 ~ V
B
+0.5
-0.5 ~ 24
V
S
-0.5 ~ V
B
+0.5
-0.5 ~ 24
-0.5 ~ Vcc+0.5
-0.5 ~ Vcc+0.5
0.6
4.8
50
-40 ~ +150
-40 ~ +125
-40 ~ +150
255:10s,max 260
Unit
V
V
V
V
V
V
V
W
mW/°C
°C/W
℃
℃
℃
℃
V
BS
=V
B
-V
S
HIN, LIN
Ta= 25
°C
,On Board
Ta> 25
°C
,On Board
RoHS Correspondence
RECOMMENDED OPERATING CONDITIONS
Symbol
V
B
V
S
V
BS
V
HO
V
CC
V
LO
V
IN
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Test conditions
Min.
V
S
+10
0
10
V
S
10
0
0
Limits
Typ.
—
—
—
—
—
—
—
Max.
V
S
+20
500
20
V
B
20
V
CC
V
CC
Unit
V
V
V
V
V
V
V
V
BS
=V
B
-V
S
HIN, LIN
* For proper operation, the device should be used within the recommended conditions
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
Package Power Dissipation Pd (W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75
100 125 150
Temperature
Ta(
o
C)
May. 2010
2
MITSUBISHI SEMICONDUCTORS <HVIC>
M81736FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS
(Ta=25°C,V
CC
=V
BS
(=V
B
-V
S
)=15V, unless otherwise specified)
Symbol
I
FS
I
BS
I
CC
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
V
BSuvr
V
BSuvt
V
BSuvh
t
VBSuv
V
CCuvr
V
CCuvt
V
CCuvh
t
VCCuv
I
OH
I
OL
R
OH
R
OL
t
dLH(HO)
t
dHL(HO)
t
rH
t
fH
t
dLH(LO)
t
dHL(LO)
t
rL
t
fL
∆t
dLH
∆t
dHL
Parameter
Floating Supply Leakage Current
V
BS
Standby Current
V
CC
Standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
V
BS
Supply UV Reset Voltage
V
BS
Supply UV Trip Voltage
V
BS
Supply UV Hysteresis Voltage
V
BS
Supply UV Filter Time
V
CC
Supply UV Reset Voltage
V
CC
Supply UV Trip Voltage
V
CC
Supply UV Hysteresis Voltage
V
CC
Supply UV Filter Time
Output High Level Short Circuit Pulsed
Current
Output Low Level Short Circuit Pulsed
Current
Output High Level On Resistance
Output Low Level On Resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side
Turn-On
Delay Matching, High Side and Low Side
Turn-Off
Test conditions
V
B
= V
S
= 600V
HIN = LIN = 0V
HIN = LIN = 0V
I
O
= -20mA, LO, HO
I
O
= 20mA, LO, HO
HIN, LIN
HIN, LIN
V
IN
= 5V
V
IN
= 0 V
Min.
—
—
0.2
13.6
—
2.7
—
—
—
7.0
6.5
0.3
—
7.0
6.5
0.3
—
120
250
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.*
—
0.2
0.5
14.2
0.3
—
—
25
—
8.4
7.85
0.55
7.5
8.4
7.85
0.55
7.5
200
350
40
15
150
130
130
50
150
130
130
50
0
0
Max.
1.0
0.5
1.0
—
0.6
—
0.8
100
2
9.8
9.0
—
—
9.8
9.0
—
—
—
—
70
30
300
230
220
80
300
230
220
80
30
30
Unit
µA
mA
mA
V
V
V
V
µA
µA
V
V
V
µs
V
V
V
µs
mA
mA
Ω
Ω
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
O
= 0V, V
IN
= 5V, PW < 10µs
V
O
= 15V, V
IN
= 0V, PW < 10µs
I
O
= -20mA, R
OH
= (V
CC
-V
O
)/I
O
I
O
= 20mA, R
OL
= V
O
/I
O
CL = 1000pF between HO-V
S
CL = 1000pF between HO-V
S
CL = 1000pF between HO-V
S
CL = 1000pF between HO-V
S
CL = 1000pF between LO-GND
CL = 1000pF between LO-GND
CL = 1000pF between LO-GND
CL = 1000pF between LO-GND
|t
dLH(HO)
-t
dLH(LO)
|
|t
dHL(HO)
-t
dHL(LO)
|
* Typ. is not specified.
May. 2010
3
MITSUBISHI SEMICONDUCTORS <HVIC>
M81736FP
HIGH VOLTAGE HALF BRIDGE DRIVER
TIMING REQUIREMENT
FUNCTION TABLE
HIN
H→L
H→L
L→H
L→H
X
X
H→L
L→H
LIN
L
H
L
H
L
H
X
X
V
BS
UV
H
H
H
H
L
L
H
H
V
CC
UV
H
H
H
H
H
H
L
L
HO
L
L
H
L
L
L
L
L
LO
L
H
L
L
L
H
L
L
Behavioral state
LO = HO = Low
LO = High
HO = High
LO = HO = Low
HO = Low, V
BS
UV
LO = High, V
BS
UV
LO = Low, V
CC
UV
HO =LO= Low, V
CC
UV
Note1 : “L” state of V
BS
UV, V
CC
UV means that UV trip voltage.
Note2
: In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.
Note3
: X (HIN) : L→H or H
→
L.X(LIN) : H or L.
Note4
: Output signal (HO) is triggered by the edge of input signal.
May. 2010
4
MITSUBISHI SEMICONDUCTORS <HVIC>
M81736FP
HIGH VOLTAGE HALF BRIDGE DRIVER
TIMING DIAGRAM
1. Input/Output Timing Diagram
HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.)
In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.
2. V
CC
(V
BS
) Supply Under Voltage Lockout Timing Diagram
If V
CC
supply voltage drops below UV trip voltage (
V
CCuvt
= V
CCuvr
- V
CCuvh
) for V
CC
supply UV filter time, output signal
becomes “L”. As soon as V
CC
supply voltage rises over UV reset voltage, output signal LO becomes “H”.
If V
CC
supply voltage drops below UV trip voltage (
V
CCuvt
= V
CCuvr
- V
CCuvh
) for V
CC
supply UV filter time, output signal becomes “L”.
As soon as V
CC
supply voltage rises over UV reset voltage, output signal HO becomes “H” it input signal is “H”. (V
CC
> V
BS
)
May. 2010
5
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