< Silicon RF Power MOS FET (Discrete)
>
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
DESCRIPTION
RD20HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band RF power amplifiers
applications.
7.2+/-0.5
OUTLINE
DRAWING
22.0+/-0.3
18.0+/-0.3
7.6+/-0.3
4-C1
High power gain:
Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz
High Efficiency: 55%typ.
2.8+/-0.3
0.10
2
3
R1.6
14.0+/-0.4
FEATURES
1
6.6+/-0.3
APPLICATION
For output stage of high power amplifiers in 900MHz band
Mobile radio sets.
3.0+/-0.4
5.1+/-0.5
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
RoHS COMPLIANT
RD20HMF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
junction to case
CONDITIONS
RATINGS
30
+/-20
71.4
6
6
175
-40 to +175
2.1
UNIT
V
V
W
W
A
°C
°C
°C/W
Note 1: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
2.3+/-0.3
< Silicon RF Power MOS FET (Discrete)
>
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
D
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=900MHz ,V
DD
=12.5V
Pin=3.0W, Idq=1.0A
V
DD
=15.2V,Po=20W(PinControl)
Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
LIMITS
MIN
-
-
1.0
20
50
TYP
-
-
-
25
55
No destroy
MAX.
5
1
3.0
-
-
uA
uA
V
W
%
-
UNIT
Note : Above parameters , ratings , limits and conditions are subject to change.
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
TYPICAL CHARACTERISTICS
100
CHANNEL DISSIPATION Pch(W)
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
80
60
40
20
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(°C)
8
6
Ids(A)
4
2
0
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
Vgs=5V
Vds VS. Ciss CHARACTERISTICS
100
Ta=+25°C
f=1MHz
Vgs=4.5V
8
6
Ids(A)
80
60
40
20
0
0
5
10
Vds(V)
15
20
Vgs=4V
4
2
Vgs=3.5V
Vgs=3V
Vgs=2.5V
0
0
2
4
6
Vds(V)
8
10
Vgs=2V
Vds VS. Coss CHARACTERISTICS
140
120
100
Coss(pF)
Ta=+25°C
f=1MHz
Ciss(pF)
Vds VS. Crss CHARACTERISTICS
14
12
10
Crss(pF)
Ta=+25°C
f=1MHz
80
60
40
20
0
0
5
10
Vds(V)
15
20
8
6
4
2
0
0
5
10
Vds(V)
15
20
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete)
>
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
40
30
20
10
0
20
25
30
Pin(dBm)
35
40
Ta=+25°C
f=900MHz
Vdd=12.5V
Idq=1.0A
η
½
Pin-Po CHARACTERISTICS
100
80
60
40
20
Pout(W) , Idd(A)
30
25
Po
120
100
80
60
ηd
Ta=25°C
f=900MHz
Vdd=12.5V
Idq=1.0A
Po(dBm) , Gp(dB) , Idd(A)
Po
20
15
10
5
0
0
1
2
Idd
ηd(%)
40
20
0
Gp
Ｉ½½
0
3
Pin(W)
4
5
6
Vdd-Po CHARACTERISTICS
35
30
25
Po(W)
Ta=25°C
f=900MHz
Pin=3.0W
Idq=1.0A
Zg=ZI=50 ohm
Po
7
6
5
Idd(A)
20
15
4
3
Idd
10
5
0
4
6
8
10
Vdd(V)
12
14
2
1
0
Publication Date : Oct．2011
4
ηd(%)
< Silicon RF Power MOS FET (Discrete)
>
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
TEST CIRCUIT(f=900MHz)
Vdd
Vgg
C1
4.7OHM
C3
C2
6pF
L1
900MHz
RD20HMF1
RF-OUT
8pF
L2
22μF,50V
RF-in
82pF
5pF
5pF
82pF
6pF
9pF
6pF
2pF
8
11
17
53
90
100
15
17
38
10.8
90
100
Note:Board material PTFE substrate
8
4.8
C1:1000pF,22000pF in parallel
C2:100pF*2 in parallel
C3:1000pF,22000pF in parallel
L1:1Turn,I.D3mm,D1.5mm silver plateted copper wire
L2:1Turn,I.D3mm,D1.5mm silver plateted copper wire
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
Publication Date : Oct．2011
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
