< Silicon RF Power MOS FET (Discrete)
>
RD12MVS1
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
OUTLINE DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
DESCRIPTION
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
6.0+/-0.15
0.2+/-0.05
1
4.9+/-0.15
1.0+/-0.05
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
2
3
INDEX MARK
(Gate)
(0.22)
(0.25)
(0.25)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112
is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Junction to Case
Zg=Zl=50
Tc=25
°C
V
GS
=0V
V
DS
=0V
CONDITIONS
RATINGS
50
+/- 20
4
2
50
150
-40 to +125
2.5
UNIT
V
V
A
W
W
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
3.5+/-0.05
2.0+/-0.05
(0.22)
< Silicon RF Power MOS FET (Discrete)
>
RD12MVS1
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
D
PARAMETER
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
LIMITS
MIN.
-
-
1.8
11.5
55
TYP.
-
-
-
12
57
MAX.
10
1
4.4
-
-
uA
uA
V
W
%
UNIT
Zero Gate Voltage Drain Current V
DS
=17V, V
GS
=0V
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
Drain Efficiency
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz,V
DD
=7.2V
Pin=1.0W,Idq=1.0A
V
DD
=9.2V,Po=12W(Pin Control)
Load VSWR tolerance
f=175MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
Not destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD12MVS1
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
60
CHANNEL DISSIPATION Pch(W)
...
50
40
30
20
10
0
0
8
Ids(A),GM(S)
Ids
On PCB(*1) with Heat-sink
On PCB(*1)
with throgh hole
and Heat-sink
6
4
2
0
GM
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
0
1
2
3
4
Vgs(V)
5
6
7
Vds-Ids CHARACTERISTICS
9
8
7
6
Ids(A)
Vgs=6.0V
Ta=+25°C
Vgs=7.5V
Vds VS. Ciss CHARACTERISTICS
160
140
120
Ciss(pF)
Ta=+25°C
f=1MHz
5
4
3
2
1
0
0
2
4
6
Vds(V)
8
10
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
Vgs=5.5V
Vgs=5.0V
Vgs=4.5V
Vgs=4.0V
Vgs=3.5V
Vds VS. Coss CHARACTERISTICS
180
160
140
120
Coss(pF)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
Ta=+25°C
f=1MHz
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
0
5
10
Vds(V)
15
20
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete)
>
RD12MVS1
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175M Hz
14
40
Po(dBm) , Gp(dB) , Idd(A)
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
Po
Pin-Po CHARACTERISTICS @f=175M Hz
90
Po
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=1.0A
80
η
½
Gp
12
Pout(W) , Idd(A)
80
70
ηd(%)
30
60
ηd(%)
10
8
6
4
2
Idd
ηd
60
50
40
30
20
1000
20
40
10
Ｉ½½
20
0
-5
0
5
10
15
Pin(dBm)
20
25
30
0
0
0
200
400
600
Pin(mW)
800
V dd-Po CHARACTERISTICS @f=175M Hz
25
20
15
Po(W)
Ta=25°C
f=175MHz
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
Po
V gs -Ids CHARACTORISTICS 2
5
4
8
V ds=10V
Tc=-25~+75°C
6
Ids(A),GM(S)
-25°C
+75°C
+25°C
Idd
3
Idd(A)
4
10
5
0
4
6
8
V dd(V )
10
12
2
1
0
2
0
0
2
4
V gs(V )
6
8
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete)
>
RD12MVS1
RoHS Compliance,
Silicon MOSFET Power Transistor, 175MHz, 12W
TEST CIRCUIT (f=175MHz)
Vgg
C1
C2
C3
W
Vdd
W
L2
24.9nH
47pF
330pF
RF-in
35mm
3mm
L1
8nH
4.7kOHM
4mm
12mm
20mm
100pF
15pF
RD12MV
S1
330pF
Contact
3.5mm
Contact
3.5mm
33pF
6.0mm
5.0mm
25mm
RF-OUT
24pF
68pF
Note:Boad material PTFE substrate
Micro strip line width=2.2mm/50、er:2.7、t=0.8mm
W:Line width=1.0mm
Chip Condencer :GRM40
Copper Board spring t=0.1mm
L:Enameled Wire
L1:4Turns、D:0.43mm、φ1.66mm(outside diameter)
L2:6Turns、D:0.43mm、φ2.46mm(outside diameter)
C1、C2:1000½F
C3: 10μF、50V
INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W
f=175MHz Zout*
Zin*=0.965-j7.73
Zout*=1.73-j1.14
f=175MHz Zin*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of output impedance
Publication Date : Oct．2011
5
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