< Silicon RF Power MOS FET (Discrete)
>
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
DESCRIPTION
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
OUTLINE DRAWING
0.2+/-0.05
8.0+/-0.2
(a)
(b)
0.65+/-0.2
(b)
7.0+/-0.2
6.2+/-0.2
(d)
FEATURES
•High power gain:
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•No gate protection diode
0.7+/-0.1
4.2+/-0.2
5.6+/-0.2
(3.6)
(4.5)
0.95+/-0.2
2.6+/-0.2
INDEX MARK
[Gate]
(c)
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
•High Efficiency: 43%min. (941MHz)
SIDE VIEW
Standoff = max 0.05
APPLICATION
For output stage of high power amplifiers in
941MHz band mobile radio sets.
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting
temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
Junction to case
CONDITIONS
RATINGS
40
-5 to +10
73
1.4
3
150
-40 to +125
1.7
UNIT
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
< Silicon RF Power MOS FET (Discrete)
>
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
D
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=941MHz , V
DD
=7.2V
Pin=0.7W,Idq=1.0A
V
DD
=9.5V,Po=5.5W(Pin Control)
LIMITS
MIN
-
-
0.5
5.5
43
TYP
-
-
-
6
-
MAX.
10
1
2.5
-
-
uA
uA
V
W
%
UNIT
VSWRT Load VSWR tolerance
f=941MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
60
CHANNEL DISSIPATION Pch(W)
,
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*PCB: Glass epoxy (t=0.8 mm)
Thermal sheet: GELTEC COOH-4000(0.5)
Vgs-Ids CHARACTERISTICS
8
Ta=+25°C
Vds=10V
Ids
50
40
30
20
10
0
0
6
Ids(A),gm(S)
4
GM
On PCB with Termal sheet
and Heat-sink
2
Free Air
0
40
80
120
160
AMBIENT TEMPERATURE Ta(deg:C.)
200
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
Vgs=5.0V
Vds VS. Ciss CHARACTERISTICS
160
140
Vgs=4.5V
Ta=+25°C
f=1MHz
8
7
6
Ids(A)
120
Ciss(pF)
5
4
3
2
1
0
0
1
2
3
4
5
Vds(V)
6
7
8
9
100
80
60
40
Vgs=4.0V
Vgs=3.5V
Vgs=3.0V
20
0
0
5
10
Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS
160
140
120
Coss(pF)
Crss(pF)
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
Ta=+25°C
f=1MHz
100
80
60
40
20
0
0
5
10
Vds(V)
15
20
0
5
10
Vds(V)
15
20
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete)
>
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=941MHz
20
40
Po(dBm) , Gp(dB) , Idd(A)
Ta=+25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
Po
Pin-Po CHARACTERISTICS @f=941MHz
80
Ta=25°C
f=941MHz
Vdd=7.2V
Idq=1.0A
ηd
80
15
Pout(W) , Idd(A)
70
60
50
30
η½
60
ηd(%)
20
Gp
40
10
Po
40
30
10
Ｉ½½
20
5
Idd
20
10
0
1.5
0
5
10
15
20
25
Pin(dBm)
30
35
0
0
0.0
0.5
Pin(W)
1.0
Vdd-Po CHARACTERISTICS @f=941MHz
10
Ta=25°C
f=941MHz
Pin=0.7W
Idq=1.0A
Zg=ZI=50 ohm
Po
Vgs-Ids CHARACTORISTICS 2
5
8
Vds=10V
Tc=-25~+75°C
6
Ids(A),gm(S)
+25°C
-25°C
+75°C
8
6
4
3
Po(W)
Idd(A)
4
4
2
Idd
2
1
2
0
4
6
8
Vdd(V)
10
12
0
0
0
1
2
Vgs(V)
3
4
5
Publication Date : Oct．2011
4
ηd(%)
< Silicon RF Power MOS FET (Discrete)
>
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
TEST CIRCUIT (f=941MHz)
Vgg
C1
C2
W
22μF、50V
Vdd
19mm
W
19mm
9pF
4.7k OHM
130pF
8mm
20mm
3mm
4mm
RD05MMP1
941MHz
0.5mm
L
12mm
6mm
2pF*
21mm
RF-OUT
130pF
RF-in
1pF
12pF*
9pF
2pF*
Note:Boad material PTFE substrate
Micro strip line width=2.2mm/50、er:2.6、t=0.8mm
W:Line width=1.0mm
：Spring（gilding)、X:3mm Y:2.5mm
L:24.9nH、6Turns、D:0.43mm、φ2.46mm(outside diameter)
C：GRM39、”＊” Mark C:GRM708
C1、C2:1000½F
Publication Date : Oct．2011
5
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