< Silicon RF Power MOS FET (Discrete)
>
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
DESCRIPTION
RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING
designed for VHF/UHF/890-950MHz RF power
6.0+/-0.15
amplifiers applications.
4.9+/-0.15
0.2+/-0.05
1
1.0+/-0.05
FEATURES
1. High Power gain and High Efficiency
Pout=5.0Wtyp., Gp=14dBtyp.
Drain Effi.=53%typ.
@Vds=12.5V, Pin=0.2W, f=950MHz
2. Integrated gate protection diode
2
3
(0.25)
(0.25)
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers in VHF/
UHF/890-950MHz band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD04HMS2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e. tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Channel Dissipation
Input Power
Drain Current
Junction Temperature
Storage Temperature
Thermal Resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50
-
-
-
Junction to Case
RATINGS
40
-5/+10
50
0.7
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
(0.22)
3.5+/-0.05
2.0+/-0.05
(0.22)
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
< Silicon RF Power MOS FET (Discrete)
>
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
ELECTRICAL CHARACTERISTICS (Tc=25°C,
UNLESS OTHERWISE NOTED)
SYMBOL
IDSS
IGSS
VTH
Pout1
D1
Pout2
D2
PARAMETER
Zero Gate Voltage Drain Current
Gate to Source Leak Current
Gate Threshold Voltage
Output power
Drain Efficiency
Output Power
Drain Efficiency
CONDITIONS
VDS=37V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
f=950MHz*,VDS=12.5V,
Pin=0.2W, Idq=0.1A
f=175MHz**,VDS=12.5V,
Pin=0.2W, Idq=0.1A
VDS=15.2V, Po=4W(Pin:Control)
f=135MHz, Idq=0.1A, Zg=50
Zl=All phase
LIMITS
MIN TYP MAX.
-
-
5
-
-
2.5
1.6
-
2.6
-
5.0
-
-
58
-
-
5.5
-
-
73
-
20:1
-
-
UNIT
μA
μA
V
W
%
W
%
VSWR
VSWRT Load VSWR Tolerance
Note: Above parameters, ratings, limits and conditions are subject to change.
* In Mitsubishi 890-950MHz Evaluation Board
** In Mitsubishi VHF Evaluation Board
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
VDS-IDS CHARACTERISTICS
3.5
Ta=+25
℃
3.0
Vgs=4.5V
2.5
IDS(A)
VGS-IDS CHARACTERISTICS
3.5
3.0
2.5
IDS(A)
Ta=+25℃
VDS=10V
Vgs=5.0V
2.0
1.5
1.0
Vgs=4.0V
Vgs=3.5V
Vgs=3.0V
2.0
1.5
1.0
0.5
0.0
0.5
0.0
0
2
4
6
8
VDS (V)
10
12
14
0
1
2
VGS(V)
3
4
5
VDS VS. Ciss CHARACTERISTICS
50
40
30
20
10
0
0
5
4
Crss (pF)
50
VDS VS. Coss CHARACTERISTICS
Ta=+25℃
f=1MHz
Ta=+25℃
f=1MHz
Coss (pF)
40
30
20
10
0
Ciss (pF)
10
15
VDS(V)
VDS VS. Crss CHARACTERISTICS
Ta=+25℃
f=1MHz
5
20
0
5
10
VDS(V)
15
20
3
2
1
0
0
5
10
VDS(V)
15
20
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete)
>
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
VHF-band TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Frequency Characteristics @f=135 to 175MHz
Ta=+25deg.C, Vds=12.5V,Idq=0.1A, Pin=0.2W
18
16
14
Pout(W) , Gp(dB), Idd(A)
ηD
Gp
90
80
70
60
50
40
Pout
12
10
8
6
4
2
0
130
140
150
160
170
f (MHz)
Idd
30
20
10
0
180
Publication Date : Oct．2011
4
Drain Effi(%)
< Silicon RF Power MOS FET (Discrete)
>
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
VHF-band
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
Pin-Po CHARACTERISTICS @f=135MHz
45
40
Pout(dBm) ,Gp(dB), Idd(A)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
Pin-Po CHARACTERISTICS @f=135MHz
9
8
7
ηD
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
90
80
70
Drain Effi(%)
Pout(W), Idd(A)
90
80
70
60
Gp(dB), Drain Effi(%)
Pout
35
30
25
20
15
10
5
0
0
5
10
15
Pin(dBm)
20
25
60
50
6
5
4
3
2
1
0
0
0.05
0.1
0.15
Pin(W)
0.2
0.25
0.3
Idd
Gp
Pout
Gp
50
40
30
20
10
0
40
30
ηD
Idd
20
10
0
Pin-Po CHARACTERISTICS @f=155MHz
45
40
Pout(dBm) ,Gp(dB), Idd(A)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
Pin-Po CHARACTERISTICS @f=155MHz
9
8
7
Pout(W), Idd(A)
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
90
80
70
Drain Effi(%)
90
80
70
60
Gp(dB), Drain Effi(%)
Pout
ηD
35
30
25
20
15
10
5
0
0
5
10
15
Pin(dBm)
20
25
60
50
6
5
4
3
2
1
0
0
0.05
0.1
0.15
0.2
Pin(W)
0.25
0.3
Idd
Gp
Pout
50
40
30
20
10
0
Gp
40
30
ηD
Idd
20
10
0
Pin-Po CHARACTERISTICS @f=175MHz
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
Pin-Po CHARACTERISTICS @f=175MHz
9
8
7
Ta=+25deg.C,Vds=12.5V,Idq=0.1A
45
40
Pout(dBm) ,Gp(dB), Idd(A)
90
Pout
80
70
Drain Effi(%)
Pout(W), Idd(A)
90
80
70
60
Gp(dB), Drain Effi(%)
ηD
35
30
25
20
15
10
5
0
0
5
10
15
Pin(dBm)
20
25
ηD
Idd
Gp
60
50
40
30
20
10
0
6
5
4
3
2
1
0
0
0.05
0.1
0.15 0.2
Pin(W)
0.25
0.3
Idd
Gp
Pout
50
40
30
20
10
0
Publication Date : Oct．2011
5
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