< Silicon RF Power MOS FET (Discrete)
>
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
OUTLINE
DRAWING
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
RD02MUS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
RD02MUS1B improved a drain surge than
RD02MUS1 by optimizing MOSFET structure.
6.0+/-0.15
0.2+/-0.05
1
4.9+/-0.15
1.0+/-0.05
2
3
INDEX MARK
(Gate)
(0.22)
(0.25)
(0.25)
FEATURES
High power gain:
Pout>2W, Gp>16dB
@Vdd=7.2V,f=175MHz, 520MHz
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD02MUS1B-101,T112
is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1
3.5+/-0.05
2.0+/-0.05
(0.22)
DESCRIPTION
< Silicon RF Power MOS FET (Discrete)
>
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction temperature
Storage temperature
Thermal resistance
Junction to case
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
CONDITIONS
RATINGS
30
+/-20
21.9
0.1
1.5
150
-40 to +125
5.7
UNIT
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
th
Pout1
D1
Pout2
D2
PARAMETER
Drain cutoff current
Gate cutoff current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=7.2V, Pin=50mW,
f=175MHz Idq=200mA
V
DD
=7.2V, Pin=50mW,
f=520MHz Idq=200mA
V
DD
=9.2V,Po=2W(Pin Control)
LIMITS
MIN
-
-
1
2
55
2
50
TYP
-
-
1.8
3
65
3
65
MAX.
100
1
3
-
-
-
-
uA
uA
V
W
%
W
%
UNIT
Load VSWR tolerance
f=175MHz,Idq=200mA,Zg=50
Load VSWR=20:1(All Phase)
V
DD
=9.2V,Po=2W(Pin Control)
No destroy
-
Load VSWR tolerance
f=520MHz,Idq=200mA,Zg=50
Load VSWR=20:1(All Phase)
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct．2011
2
< Silicon RF Power MOS FET (Discrete)
>
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.8 mm)
Vgs-Ids CHARACTERISTICS
3.0
2.5
Ids(A),GM(S)
Ta=+25°C
Vds=7.2V
25
CHANNEL DISSIPATION Pch(W)
...
20
15
10
5
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(deg:C.)
On PCB (*1)
with through hole
and Heat-sink
On heat-sink
2.0
1.5
1.0
Ids
GM
0.5
0.0
0
1
2
3
Vgs(V)
4
5
Vds-Ids CHARACTERISTICS
5.0
4.5
4.0
3.5
Ids(A)
Ta=+25°C
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vds VS. Ciss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
Ciss(pF)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
Vds(V)
8
10
Vgs=6V
20
Vgs=5V
10
Vgs=4V
Vgs=3V
0
0
5
10
Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
6
5
4
Ta=+25°C
f=1MHz
30
Coss(pF)
Crss(pF)
20
3
2
10
1
0
0
5
10
Vds(V)
15
20
0
0
5
10
Vds(V)
15
20
Publication Date : Oct．2011
3
< Silicon RF Power MOS FET (Discrete)
>
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
Po
40
35
Po(dBm) , Gp(dB) ,
Idd(A)
100
90
Pout(W) , Idd(A)
4.0
Pin-Po CHARACTERISTICS
@f=175MHz
100
30
25
20
15
10
5
0
-10
Gp
η½
80
ηd(%)
3.0
Po
ηd
80
ηd(%)
Idd(A)
ηd(%)
70
60
50
2.0
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
40
30
20
1.0
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=200mA
Idd
60
40
0.0
0
20
40
60
Pin(mW)
80
-5
0
5
10
Pin(dBm)
15
20
20
100
40
35
Po(dBm) , Gp(dB) ,
Idd(A)
Pin-Po CHARACTERISTICS
@f=520MHz
Po
100
90
Pout(W) , Idd(A)
4.0
Pin-Po CHARACTERISTICS
@f=520MHz
Po
100
30
25
20
15
10
5
0
-10
-5
0
5
10
Pin(dBm)
15
20
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
Gp
η½
80
ηd(%)
3.0
ηd
80
70
60
50
40
30
20
2.0
1.0
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=200mA
60
40
0.0
0
20
40
60
Pin(mW)
80
20
100
7
6
5
Po(W)
Vdd-Po CHARACTERISTICS
@f=175MHz
Ta=25°C
f=175MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
1.4
1.2
1.0
Idd(A)
Po(W)
7
6
5
4
3
2
1
0
3
Vdd-Po CHARACTERISTICS
@f=520MHz
Ta=25°C
f=520MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
1.4
1.2
1.0
4
3
2
1
0
3
5
7
9
Vdd(V)
11
Idd
0.8
0.6
0.4
0.2
0.0
13
Idd
0.8
0.6
0.4
0.2
0.0
5
7
9
Vdd(V)
11
13
Publication Date : Oct．2011
4
< Silicon RF Power MOS FET (Discrete)
>
RD02MUS1B
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TEST CIRCUIT(f=175MHz)
Vgg
C1
15mm
19mm
L3
3mm
5mm
3mm
62pF
3.3mm
39pF
L1
6.5mm
12mm
680 ohm
240pF
3mm
10pF
43pF
10pF
11.5mm
5mm
L2
13.5mm
12mm
62pF
5mm
Vdd
C2
10μF,50V
4.7K ohm
RF-OUT
RF-in
RD02MUS1B
175MHz
L1:Enameled wire 5 Turns,D:0.43mm,2.46mmm O.D
L2:Enameled wire 3 Turns,D:0.43mm,2.46mmm O.D
L3:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
TEST CIRCUIT(f=520MHz)
Vgg
C1
19mm
19mm
Vdd
C2
10μF,50V
4.7K ohm
11mm
L1
4.5m
m
18pF
40.5mm
RF-OUT
62pF
RF-in
62pF
26.5m
m
20mm
6pF
2mm
43pF
10mm
680 ohm
240pF
3mm
RD02MUS1B
520MHz
L1:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
Publication Date : Oct．2011
5
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