36V Rad Hard Dual Precision Operational Amplifier
ISL70227SEH
The ISL70227SEH is a high precision dual operational
amplifier featuring very low noise, low offset voltage, low input
bias current and low temperature drift. These features plus its
radiation tolerance make the ISL70227SEH the ideal choice
for applications requiring both high DC accuracy and AC
performance. The combination of precision, low noise, and
small footprint provides the user with outstanding value and
flexibility relative to similar competitive parts.
Applications for these amplifiers include precision and
analytical instrumentation, active filters, and power supply
controls.
The ISL70227SEH is available in a 10 lead hermetic ceramic
flatpack and operates over the extended temperature range of
-55°C to +125°C.
Features
• Electrically Screened to DLA SMD#
5962-12223
• Wide Supply Range . . . . . . . . . . . . . . . . . . . .4.5V to 42V Max.
• Very Low Voltage Noise . . . . . . . . . . . . . . . . . .2.5nV/√Hz, Typ.
• Gain-bandwidth Product . . . . . . . . . . . . . . . . . . . . . . . . 10MHz
• Superb Offset Drift . . . . . . . . . . . . . . . . . . . . . . . . 1µV/°C, Max
• Operating Temperature Range. . . . . . . . . . .-55°C to +125°C
• Low Input Voltage Offset . . . . . . . . . . . . . . . . . . . . . . 10µV, Typ.
• Input Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1nA, Typ.
• Unity Gain Stable
• No Phase Reversal
• Radiation Tolerance
- SEL/SEB LET
TH
. . . . . . . . . . . . . . . . . . . . . . 86MeV•cm
2
/mg
- High Dose Rate. . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)
- Low Dose Rate . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)*
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer by wafer basis to
50krad(Si) at low dose rate.
Applications
• Power Supply Control
• Industrial Controls
• Active Filter Blocks
• Data Acquisition
Related Literature
•
AN1669,
“ISL70227SRH Evaluation Board User’s Guide”
•
AN1756,
“Single Events Effects Testing of the ISL70227RH,
Dual 36V Rad Hard Precision Operational Amplifiers”
R
3
243
V
+
20
-
V
IN
R
1
95.3
R
2
232
C
2
680pF
ISL70227SEH
25
GROUNDED
BIASED
OUTPUT
+
V
-
V
OS
(µV)
15
10
5
0
0
C
1
1.5nF
Sallen-Key Low Pass Filter (1MHz)
10
20
30
40
50
60
70
80
90
100
TOTAL DOSE (krad(Si))
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. OFFSET VOLTAGE vs LOW DOSE RADIATION
August 24, 2012
FN7958.1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas Inc. 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL70227SEH
Ordering Information
ORDERING NUMBER
(Notes 1, 2)
5962R1222301VXA
ISL70227SEHF/PROTO
5962R1222301V9A
ISL70227SEHX/SAMPLE
ISL70227MHEVAL1Z
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. For Moisture Sensitivity Level (MSL), please see device information page for
ISL70227SEH.
For more information on MSL please see techbrief
TB363.
PART
MARKING
ISL70227SEHVF
ISL70227 SEHF/PROTO
ISL70227SEHVX
ISL70227SEHVX/SAMPLE
Evaluation Board
TEMP RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(Pb-free)
10 Ld Flatpack
10 Ld Flatpack
Die
Die
PKG.
DWG. #
K10.A
K10.A
Pin Configuration
ISL70227SEH
(10 LD FLATPACK)
TOP VIEW
OUTA
-IN A
+IN A
NC
V-
1
2
3
4
5
10
9
V+
OUT B
-IN B
+IN B
NC
-
+
+
-
8
7
6
Pin Descriptions
PIN NUMBER
3
5
7
8
9
10
1
2
4, 6
PIN NAME
+IN A
V-
+IN B
-IN B
OUT B
V+
OUT A
-IN A
NC
V+
IN-
IN+
EQUIVALENT CIRCUIT
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 3
Circuit 2
Circuit 1
-
Amplifier A non-inverting input
Negative power supply
Amplifier B non-inverting input
Amplifier B inverting input
Amplifier B output
Positive power supply
Amplifier A output
Amplifier A inverting input
DESCRIPTION
Not Connected – This pin is not electrically connected internally.
V+
OUT
V-
V+
CAPACITIVELY
TRIGGERED ESD
CLAMP
V-
V-
CIRCUIT 1
CIRCUIT 2
CIRCUIT 3
2
FN7958.1
August 24, 2012
ISL70227SEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (LET = 86.4 MeV
•
cm
2
/mg) . . . . . . . . . . . . . 36V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . V
-
- 0.5V to V
+
+ 0.5V
Max/Min Input Current for
Input Voltage >V+ or <V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20mA
Output Short-Circuit Duration
(1 output at a Time) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
ESD Tolerance
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 300V
Charged Device Model (Tested per CDM-22CI0ID) . . . . . . . . . . . . . . 750V
Di-electrically Isolated PR40 Process . . . . . . . . . . . . . . . . . . . Latch-up free
Thermal Information
Thermal Resistance (Typical)
θ
JA
(°C/W)
θ
JC
(°C/W)
10 Ld Ceramic Flatpack (Notes 3, 4) . . . . .
130
20
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V (±2.25V) to 30V (±15V)
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379
for details.
4. For
θ
JC
, the “case temp” location is the center of the ceramic on the package underside.
Electrical Specifications
PARAMETER
V
OS
V
S
±15V, V
CM
= 0, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted. Boldface limits apply over
the operating temperature range, -55°C to +125°C
.
DESCRIPTION
Offset Voltage
CONDITIONS
MIN
(Note 5)
-75
-100
TCV
OS
I
OS
Offset Voltage Drift
Input Offset Current
-1
-10
-12
I
B
Input Bias Current
-10
-12
V
CM
Input Voltage Range
Guaranteed by CMRR
-13
-12
CMRR
Common-Mode Rejection Ratio
V
CM
= -13V to +13V
V
CM
= -12V to +12V
PSRR
Power Supply Rejection Ratio
V
S
= ±2.25V to ±5V
V
S
= ±3V to ±15V
A
VOL
V
OH
Open-Loop Gain
Output Voltage High
V
O
= -13V to +13V
R
L
= 10kΩ to ground
R
L
= 10kΩ to ground
115
115
110
110
1000
13.5
13.2
R
L
= 2kΩ to ground
13.4
13.1
V
OL
Output Voltage Low
R
L
= 10kΩ to ground
-13.65
-13.5
-13.2
R
L
= 2kΩ to ground
-13.5
-13.4
-13.1
13.5
1500
13.65
117
120
1
.1
1
TYP
-10
MAX
(Note 5)
75
100
1
10
12
10
12
13
12
UNIT
µV
µV
µV/
°
C
nA
nA
nA
nA
V
V
dB
dB
dB
dB
V/mV
V
V
V
V
V
V
V
V
3
FN7958.1
August 24, 2012
ISL70227SEH
Electrical Specifications
PARAMETER
I
S
V
S
±15V, V
CM
= 0, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted. Boldface limits apply over
the operating temperature range, -55°C to +125°C
. (Continued)
DESCRIPTION
Supply Current/Amplifier
CONDITIONS
MIN
(Note 5)
TYP
2.2
MAX
(Note 5)
2.8
3.7
I
SC
V
SUPPLY
Short-Circuit
Supply Voltage Range
R
L
= 0Ω to ground
Guaranteed by PSRR
±2.25
±45
±15
UNIT
mA
mA
mA
V
AC SPECIFICATIONS
GBW
e
np-p
e
n
e
n
e
n
e
n
in
THD + N
Gain Bandwidth Product
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
Total Harmonic Distortion + Noise
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 10kHz
1kHz, G = 1, V
O
= 3.5V
RMS
,
R
L
= 2kΩ
10
85
3
2.8
2.5
2.5
0.4
0.00022
MHz
nV
P-P
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
%
TRANSIENT RESPONSE
SR
Slew Rate
A
V
= 10, R
L
= 2kΩ, V
O
= 4V
P-P
±2.5
±2.0
t
r
, t
f
, Small
Signal
Rise Time
10% to 90% of V
OUT
Fall Time
90% to 10% of V
OUT
t
s
Settling Time to 0.1%
10V Step; 10% to V
OUT
Settling Time to 0.01%
10V Step; 10% to V
OUT
t
OL
OS+
Output Overload Recovery Time
Positive Overshoot
A
V
= -1, V
OUT
= 100mV
P-P
,
R
f
= R
g
= 2kΩ, R
L
= 2kΩ to V
CM
A
V
= -1, V
OUT
= 100mV
P-P
,
R
f
= R
g
= 2kΩ, R
L
= 2kΩ to V
CM
A
V
= -1, V
OUT
= 10V
P-P
,
R
g
= R
f
= 10k, R
L
= 2kΩ to V
CM
A
V
= -1, V
OUT
= 10V
P-P
,
R
L
= 2kΩ to V
CM
A
V
= 100, V
IN
= 0.2V,
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
36
100
100
38
100
100
3.4
3.8
1.7
20
35
20
35
±3.6
V/µs
V/µs
ns
ns
ns
ns
µs
µs
µs
%
%
%
%
OS-
Negative Overshoot
4
FN7958.1
August 24, 2012
ISL70227SEH
V
S
±15V, V
CM
= 0, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted. Boldface limits apply over a
total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with
exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
V
OS
DESCRIPTION
Offset Voltage
CONDITIONS
MIN
(Note 5)
-75
-100
TCV
OS
I
OS
Offset Voltage Drift
Input Offset Current
-1
-10
-25
I
B
Input Bias Current
-10
-25
V
CM
Input Voltage Range
Guaranteed by CMRR
-13
-12
CMRR
Common-Mode Rejection Ratio
V
CM
= -13V to +13V
V
CM
= -12V to +12V
PSRR
Power Supply Rejection Ratio
V
S
= ±2.25V to ±5V
V
S
= ±3V to ±15V
A
VOL
V
OH
Open-Loop Gain
Output Voltage High
V
O
= -13V to +13V
R
L
= 10kΩ to ground
R
L
= 10kΩ to ground
115
115
110
110
1000
13.5
13.2
R
L
= 2kΩ to ground
13.4
13.1
V
OL
Output Voltage Low
R
L
= 10kΩ to ground
-13.65
-13.5
-13.2
R
L
= 2kΩ to ground
-13.5
-13.4
-13.1
I
S
Supply Current/Amplifier
2.2
2.8
3.7
I
SC
V
SUPPLY
Short-Circuit
Supply Voltage Range
R
L
= 0Ω to ground
Guaranteed by PSRR
±2.25
±45
±15
13.5
1500
13.65
117
120
1
.1
1
TYP
-10
MAX
(Note 5)
75
100
1
10
25
10
25
13
12
UNIT
µV
µV
µV/
°
C
nA
nA
nA
nA
V
V
dB
dB
dB
dB
V/mV
V
V
V
V
V
V
V
V
mA
mA
mA
V
Electrical Specifications
AC SPECIFICATIONS
GBW
e
np-p
e
n
e
n
e
n
e
n
in
THD + N
Gain Bandwidth Product
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
Total Harmonic Distortion + Noise
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
f = 10kHz
1kHz, G = 1, V
O
= 3.5V
RMS
,
R
L
= 2kΩ
10
85
3
2.8
2.5
2.5
0.4
0.00022
MHz
nV
P-P
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
%
5
FN7958.1
August 24, 2012
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
