Radiation Hardened High Frequency Half Bridge
Drivers
IS-2100ARH, IS-2100AEH
The Radiation Hardened IS-2100ARH, IS-2100AEH are high
frequency, 130V Half Bridge N-Channel MOSFET Driver ICs,
which are functionally similar to industry standard 2110 types.
The low-side and high-side gate drivers are independently
controlled. This gives the user maximum flexibility in
dead-time selection and driver protocol.
In addition, the devices have on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a set
or reset pulse is generated to correct the high-side latch. This
feature protects the high-side latch from single event upsets
(SEUs).
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
Detailed Electrical Specifications for the IS-2100ARH,
IS-2100AEH are contained in SMD
5962-99536.
A “hotlink” is
also provided on our website for downloading.
Features
• Electrically Screened to DLA SMD #
5962-99536
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Maximum Total Dose. . . . . . . . . . . . . . . . . . . . . 300krad(SI)
- DI RSG Process Provides Latch-up Immunity
- SEU Rating . . . . . . . . . . . . . . . . . . . . . . . . . 82MeV/mg/cm
2
- Vertical Device Architecture Reduces Sensitivity to Low
Dose Rates
• Bootstrap Supply Max Voltage to 150V
• Drives 1000pF Load at 1MHz with Rise and Fall Times of
30ns (Typ)
• 1.5A (Typ) Peak Output Current
• Independent Inputs for Non-Half Bridge Topologies
• Low DC Power Consumption. . . . . . . . . . . . . . . . . 60mW (Typ)
• Operates with V
DD
= V
CC
Over 12V to 20V Range
• Low-side Supply Undervoltage Protection
Ordering Information
ORDERING NUMBER
5962F9953602V9A
5962F9953602VXC
5962F9953602QXC
IS9-2100ARH/Proto
5962F9953603VXC
5962F9953603V9A
INTERSIL MKT.
NUMBER
IS0-2100ARH-Q
IS9-2100ARH-Q
IS9-2100ARH-8
IS9-2100ARH/Proto
IS9-2100AEH-Q
IS0-2100AEH-Q
TEMP. RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
Applications
• High Frequency Switch-Mode Power Supplies
• Drivers for Inductive Loads
• DC Motor Drivers
Pin Configuration
IS-2100ARH, IS-2100AEH
FLATPACK (CDFP4-F16)
TOP VIEW
LO
COM
V
CC
NC
NC
VS
VB
HO
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
V
SS
LIN
SD
HIN
V
DD
NC
NC
August 28, 2012
FN9037.2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas Inc. 2002, 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
IS-2100ARH, IS-2100AEH
Die Characteristics
DIE DIMENSIONS:
4820μm x 3300μm (190 mils x 130 mils)
Thickness: 483μm
±25.4μm
(19 mils
±1
mil)
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k
Å
±1.0k
Å
Top Metallization:
Type: ALSiCu
Thickness: 16.0k
Å
±2k
Å
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
542
Metallization Mask Layout
IS-2100ARH, IS-2100AEH
SD (13)
HIN (12)
LIN (14)
V
SS
(15)
V
DD
(11)
LO (1)
HO (8)
COM (2)
VB (7)
V
CC
(3)
VS (6)
For additional products, see
www.intersil.com/product_tree
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at
www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see
www.intersil.com
2
FN9037.2
August 28, 2012
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