14-Pin SO (derate 8.33mW/°C above +70°C)............. 667mW
Operating Temperature Range .........................-40°C to +125°C
Military Operating Temperature Range .............-55°C to +125°C
Junction Temperature ........................................................150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) ...............................+3000°C
Soldering Temperature (reflow) .......................................+240°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
DD
= +5V, V
SS
= 0V, V
CM
= 0V, V
OUT
= V
DD
/2, R
L
≥
1MΩ connected to V
DD
/2,
SHDN
= V
DD
(MAX4481 only),
T
A
= +25°C,
unless
otherwise noted.)
PARAMETER
Supply Voltage Range
Supply Current per Amplifier
Supply Current in Shutdown
Input Offset Voltage
Input Bias Current
Input Offset Current
Input Resistance
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
SYMBOL
V
DD
I
DD
I
SHDN
V
OS
I
B
I
OS
R
IN
V
CM
CMRR
PSRR
(Note 1)
(Note 1)
Differential or common mode
Inferred from CMRR test
V
SS
≤
V
CM
≤
V
DD
- 1.3V
2.5V
≤
V
DD
≤
5.5V
V
SS
+ 0.02V
≤
V
OUT
≤
V
DD
- 0.03V
V
SS
+ 0.10V
≤
V
OUT
≤
V
DD
- 0.20V
Specified as
V
DD
- V
OUT
Specified as
V
OUT
- V
SS
Sourcing
Sinking
Device in shutdown mode,
SHDN
= V
SS
,
V
SS
< V
OUT
< V
CC
(MAX4481 only)
MAX4481 only
MAX4481 only
SHDN
= V
DD
or V
SS
(MAX4481 only)
0.7
✕
V
DD
±0.001
±1
140
±500
R
L
= 100kΩ
R
L
= 5kΩ
R
L
= 100kΩ
R
L
= 5kΩ
R
L
= 100kΩ
R
L
= 5kΩ
94
V
SS
71
82
86
92
110
dB
105
4
80
1
8
3
17
±0.01
±0.1
30
150
mV
mV
mA
µA
V
V
nA
kHz
Maxim Integrated
CONDITIONS
Inferred from PSRR test
V
DD
= 2.5V
V
DD
= 5.0V
SHDN
= V
SS
(MAX4481 only)
MIN
2.5
TYP
45
50
0.05
±1
±0.1
±0.1
1000
MAX
5.5
100
0.5
±5.5
±100
±100
UNITS
V
µA
µA
mV
pA
pA
MΩ
V
DD
- 1.3
V
dB
dB
Large-Signal Voltage Gain
A
VOL
Output Voltage High
Output Voltage Low
Output Short-Circuit Current
V
OH
V
OL
I
SC
Shutdown Mode Output Leakage I
OUTSHDN
SHDN
Logic Low
SHDN
Logic High
SHDN
Input Current
Gain-Bandwidth Product
2
V
IL
V
IH
I
IL
, I
IH
GBW
0.3
✕
V
DD
MAX4480–MAX4483
Single/Dual/Quad, Low-Cost, Single-Supply,
Rail-to-Rail Op Amps with Shutdown
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= +5V, V
SS
= 0V, V
CM
= 0V, V
OUT
= V
DD
/2, R
L
≥
1MΩ connected to V
DD
/2,
SHDN
= V
DD
(MAX4481 only),
T
A
= +25°C,
unless
otherwise noted.)
PARAMETER
Phase Margin
Gain Margin
Slew Rate
Input Voltage Noise Density
Input Current Noise Density
Capacitive-Load Stability
Shutdown Delay Time
Enable Delay Time
Power-On Time
Input Capacitance
Total Harmonic Distortion
Settling Time to 0.1%
SR
e
n
i
n
C
LOAD
t
SHDN
t
EN
t
ON
C
IN
THD
t
S
f = 1kHz, V
OUT
=
2Vp-p, A
V
= +1V/V
V
OUT
= 2V step
R
L
= 100kΩ
f = 10kHz
f = 10kHz
A
V
= +1V/V
MAX4481 only
MAX4481 only
SYMBOL
φ
M
CONDITIONS
MIN
TYP
70
30
80
100
1
400
0.4
12
15
2.0
0.005
50
MAX
UNITS
degrees
dB
V/ms
nV/√Hz
fA/√Hz
pF
µs
µs
µs
pF
%
µs
ELECTRICAL CHARACTERISTICS
(V
DD
= +5V, V
SS
= 0V, V
CM
= 0V, V
OUT
= V
DD
/2, R
L
≥
1MΩ connected to V
DD
/2,
SHDN
= V
DD
(MAX4481 only),
T
A
= -40°C to
+125°C,
unless otherwise noted.) (Note 2)
PARAMETER
Supply Voltage Range
Supply Current per Amplifier
Supply Current in Shutdown
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
SYMBOL
V
DD
I
DD
I
SHDN
V
OS
TC
VOS
I
B
I
OS
V
CM
CMRR
PSRR
(Note 1)
(Note 1)
Inferred from CMRR test
V
SS
≤
V
CM
≤
V
DD
- 1.4V
2.5V
≤
V
CC
≤
5.5V
Device in shutdown
mode,
SHDN
= V
SS
,
V
SS
< V
OUT
< V
CC
(MAX4481 only)
MAX4481 only
MAX4481 only
SHDN
= V
DD
or V
SS
(Note 1) (MAX4481 only)
V
SS
+ 0.1V
≤
V
OUT
≤
V
DD
- 0.20V, R
L
= 5kΩ
Specified as V
DD
- V
OUT
, R
L
= 5kΩ
84
200
0.7
✕
V
DD
1
-40°C to +85°C
+85°C to +125°C
V
SS
67
77
±0.5
µA
±2.5
0.3
✕
V
DD
V
V
µA
dB
mV
mV
±3
±100
±100
V
DD
- 1.4
SHDN
= V
SS
, (MAX4481 only)
CONDITIONS
Inferred from PSRR test
MIN
2.5
TYP
MAX
5.5
120
1.0
9
UNITS
V
µA
µA
mV
µV/°C
pA
pA
V
dB
dB
Shutdown Mode Output Leakage I
OUTSHDN
SHDN
Logic Low
SHDN
Logic High
SHDN
Input Current
Large-Signal Voltage Gain
Output Voltage High
V
IL
V
IH
I
IL,
I
IH
A
VOL
V
OH
50
Output Voltage Low
V
OL
Specified as V
OUT
- V
SS
, R
L
= 5kΩ
Note 1:
Guaranteed by design.
Note 2:
Specifications are 100% tested at T
A
= +25°C (exceptions noted). All temperature limits are guaranteed by design.
make 后的错误信息如下:
# make
gcc -Wall -DMODULE -D__KERNEL__ -DLINUX -I/usr/src/linux-2.4.20-8/include -c test.c
test.c: In function `read_test':
test.c:14: warning: implicit ......
便携式医疗设备的特殊性决定了它们应该是对用户友好的、必须工作在无菌环境下，并且空间占用小、耗能低。 同时，便携式医疗设备还需要足够的计算能力以便处理医疗数据，能够连接到无线或有线接口以便记录和发送数据。从设计人员的角度考虑，上述需求需要低功耗的单片机（MCU）和数字信号控制器（Digital Signal Controller，DSC）。 正是有了嵌入式处理器，设计人员才有可能设...[详细]
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