Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -60NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
FMAX
Junction-to-Ambient Thermal Resistance (B
JA
)
.......77.6NC/W
Junction-to-Case Thermal Resistance (B
JC
)
.................5NC/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
IN
= 12V, C
GATE-SOURCE
= 1nF, T
A
= -40NC to +125NC, unless otherwise noted. Typical values are at T
A
= +25NC.) (Note 2)
PARAMETER
Input Voltage Range
SYMBOL
V
IN
CONDITIONS
Operating range
Protection range
V
IN
= V
SRC
= V
IN
=
12V
SHDN
= high
Input Supply Current
I
IN
SHDN
= low
V
IN
= V
SRC
= V
IN
=
30V
V
IN
= V
SRC
= V
IN
=
12V
V
IN
= V
SRC
= V
IN
=
30V
MIN
3
-36
224
260
34
64
36
240
0.97 x
V
UV
V
UV
0.05 x
V
UV
V
IN
rising
0.97 x
V
OV
V
OV
0.05 x
V
OV
1.03 x
V
OV
TYP
MAX
30
+90
320
380
FA
50
100
200
350
1.03 x
V
UV
UNITS
V
SRC Input Current
Internal Undervoltage Threshold
Internal Undervoltage-Threshold
Hysteresis
Internal Overvoltage Threshold
Internal Overvoltage-Threshold
Hysteresis
I
SRC
V
UV_TH
V
UV_HYS
V
OV_TH
V
OV_HYS
V
IN
= V
SRC
= 12V
V
IN
= V
SRC
= 30V
V
IN
rising
FA
V
V
V
V
Maxim Integrated
2
MAX16128/MAX16129
Load-Dump/Reverse-Voltage Protection Circuits
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= 12V, C
GATE-SOURCE
= 1nF, T
A
= -40NC to +125NC, unless otherwise noted. Typical values are at T
A
= +25NC.) (Note 2)
PARAMETER
Internal Cold-Crank Threshold
SYMBOL
V
CCK
V
IN
falling
CONDITIONS
MIN
0.97 x
V
CCK
TYP
V
CCK
0.05 x
V
CCK
MAX16128
MAX16129
4
2
0.9 x V
IN
0.87 x
V
IN
(Note 3)
V
GATE
rising (GND to V
SRC
+ 8V)
V
IN
rising (MAX16128) from
(0.9 x V
OV_TH
) to (1.1 x V
OV_TH
),
V
OUT
rising (MAX16129) from
(0.9 x V
OV_TH
) to (1.1 x V
OV_TH
)
V
IN
falling from (1.1 x V
UV_TH
) to
(0.9 x V
UV_TH
)
V
IN
rising (MAX16128) from
(0.9 x V
OV_TH
) to (1.1 x V
OV_TH
)
V
OUT
rising (MAX16129) from
(0.9 x V
OV_TH
) to (1.1 x V
OV_TH
)
V
IN
= V
SRC
= V
OUT
= 3V,
I
GATE
= -1FA
V
IN
= V
SRC
= V
OUT
= 12V,
I
GATE
= -1FA
V
IN
= V
SRC
= V
OUT
= 24V,
I
GATE
= -1FA
V
IN
= V
SRC
= V
OUT
= 30V,
I
GATE
= -1FA
GATE Pulldown Current
GATE Charge-Pump Current
Thermal Shutdown
Thermal-Shutdown Hysteresis
SHDN
Logic-High Input Voltage
SHDN
Logic-Low Input Voltage
Maxim Integrated
MAX
1.03 x
V
CCK
UNITS
V
V
mI
V
V
Fs
ms
ms
Internal Cold-Crank Threshold Hysteresis V
CCK_HYS
OUT Input Resistance to Ground
POK Threshold Rising
POK Threshold Falling
Startup Response Time
Autoretry Timeout
GATE Rise Time
R
OUT
V
POK+
V
POK-
t
START
t
RETRY
t
RISE
150
150
1
Overvoltage-to-GATE Propagation Delay
t
OVG
1
Fs
Undervoltage-to-GATE Propagation
Delay
t
UVG
21
Fs
Overvoltage to
FLAG
Propagation Delay
t
OV
1
Fs
5
8
7
6.25
8.8
180
5
9
8.5
8
5.5
10
V
10
9.5
mA
FA
GATE Output Voltage High Above V
SRC
V
GS
I
PD
I
GATE
T
+
δT
V
IH
V
IL
V
GATE
= 12V
V
IN
= V
GATE
= V
SRC
= 12V
+145
15
1.4
0.4
NC
NC
V
V
3
MAX16128/MAX16129
Load-Dump/Reverse-Voltage Protection Circuits
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= 12V, C
GATE-SOURCE
= 1nF, T
A
= -40NC to +125NC, unless otherwise noted. Typical values are at T
A
= +25NC.) (Note 2)
PARAMETER
SHDN
Input Pulse Width
SHDN
Input Pulldown Current
FLAG
Output Voltage Low
FLAG
Leakage Current
SYMBOL
t
PW
I
SPD
V
OL
I
IL
FLAG
sinking 1mA
V
FLAG
= 12V
CONDITIONS
MIN
6
0.8
1.2
0.4
0.5
TYP
MAX
UNITS
Fs
FA
V
FA
Note 2:
All parameters are production tested at T
A
= +25NC. Limits over the operating temperature range are guaranteed by
design and characterization.
Note 3:
The MAX16128/MAX16129 power up with the external MOSFETs in off mode (V
GATE
= V
SRC
). The external MOSFETs turn
on t
START
after the devices are powered up and all input conditions are valid.
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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