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US3421
P-Ch 30V Fast Switching MOSFETs
General Description
The US3421 is the highest performance trench
Product Summery
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US3421 meet the RoHS and Green Product
BVDSS
-30V
Applications
RDSON
70m
ID
-3.2A
requirement with full function reliability approved.
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
Load Switch
SOT23 Pin Configuration
D
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
2
1
G
S
Rating
-30
20
-3.2
-2.5
-13
1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
R
JA
JC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
125
80
Unit
/W
/W
Rev A.01 D012510
1
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US3421
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
Symbol
BV
DSS
BV
DSS
R
DS(ON)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
T
J
BVDSS Temperature Coefficient
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
I
D
=-1A
V
DS
=-20V , V
GS
=-4.5V , I
D
=-3A
, unless otherwise noted)
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25
V
GS
=-10V , I
D
=-3A
V
GS
=-4.5V , I
D
=-1.5A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-24V , V
GS
=0V , T
J
=25
V
DS
=-24V , V
GS
=0V , T
J
=55
V
GS
20V , V
DS
=0V
V
DS
=-5V , I
D
=-3A
V
DS
=0V , V
GS
=0V , f=1MHz
, I
D
=-1mA
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.02
55
90
-1.5
4.32
---
---
---
4.8
24
5.22
1.25
2.3
18.4
11.4
39.4
5.2
463
82
68
Max.
---
---
70
120
-2.5
---
-1
-5
100
---
48
7.3
1.8
3.2
37
21
79
10.4
650
115
95
pF
ns
nC
Unit
V
V/
m
V
mV/
uA
nA
S
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
Pulsed Source Current
2,4
1,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
Min.
---
---
---
Typ.
---
---
---
Max.
-3.2
-13
-1
Unit
A
A
V
Diode Forward Voltage
2
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
300us , duty cycle
2%
3.The power dissipation is limited by 150
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
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US3421
Typical Characteristics
14
12
P-Ch 30V Fast Switching MOSFETs
135.0
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
115.0
I
D
= -3A
-I
D
Drain Current (A)
10
8
6
4
2
0
0
0.5
V
GS
=-4.5V
V
GS
=-3V
R
DSON
(m )
3.5
4
4.5
5
95.0
75.0
55.0
-V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
3
2
4
-V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
10
10
Fig.2 On-Resistance vs. G-S Voltage
V
DS
=-20V
-I
S
Source Current(A)
7.5
-V
GS
Gate to Source Voltage (V)
1.2
8
I
D
=-3A
6
5
T
J
=150
2.5
T
J
=25
4
2
0
0
0.3
0.6
0.9
0
0
2.5
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
5
7.5
10
Fig.3 Forward Characteristics of Reverse
1.5
2.0
Fig.4 Gate-Charge Characteristics
1
0.5
0
-50
Normalized On Resistance
Normalized V
GS(th)
1.5
1.0
0.5
T
J
,Junction Temperature (
0
50
)
100
150
-50
0
50
100
150
T
J
, Junction Temperature ( )
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
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US3421
P-Ch 30V Fast Switching MOSFETs
1000
100.00
F=1.0MHz
Ciss
Capacitance (pF)
10.00
100us
10ms
100ms
1s
100
Coss
Crss
-I
D
(A)
1.00
0.10
10
1
5
9
13
17
21
25
T
A
=25
Single Pulse
0.01
DC
-V
DS
, Drain to Source Voltage (V)
0.1
1
-V
DS
(V)
10
100
Fig.7 Capacitance
1
JA
)
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Normalized Thermal Response (R
P
DM
0.001
SINGLE PULSE
T
ON
T
D = T
ON
/T
T
Jpeak
= T
A
+ P
DM
x R
JA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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