RSQ025P03
Transistor
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
<
<
∗
1 Pw
=
10µs, Duty cycle
=
1%
∗
2 Mounted on a ceramic board
Symbol
V
DSS
V
GSS
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
Limits
−30
±20
±2.5
±10
−1
−4
1.25
150
−55~+150
Unit
V
V
A
A
A
A
°C
°C
∗
1
∗
1
W
∗
2
Electrical characteristics
(Ta=25°C)
Parameter
Gate-source leakage
Symbol
I
GSS
Min.
−
−30
−
−1.0
−
−
−
Y
fs
C
iss
C
oss
C
rss
t
d(on)
∗
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
∗
∗
∗
∗
Typ.
−
−
−
−
80
120
145
−
320
85
60
8
11
33
7
4.4
1.0
1.4
Max.
±10
−
−1
−2.5
110
165
200
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
I
D
=−1.25A
V
DD
−
15V
V
GS
=−4.5V
R
L
=12Ω
R
GS
=10Ω
V
DD
−
15V
V
GS
=−5V
I
D
=−2.5A
Conditions
V
GS
=
±20V,
V
DS
=0V
I
D
=−1
mA, V
GS
=0V
,
V
DS
=−30V,
V
GS
=0V
V
DS
=−10V,
I
D
=−1
mA
I
D
=−2.5A,
V
GS
=−10V
I
D
=−1.25A,
V
GS
=−4.5V
I
D
=−1.25A,
V
GS
=−4.0V
V
DS
=−10V,
I
D
=−1.25A
V
DS
=−10V,V
GS
=0V
f=1MHz
Drain-source breakdown voltage
V
(BR)DSS
Zero gate voltage drain current
Gate threshold voltage
I
DSS
V
GS(th)
∗
Static drain-source on-state
resistance
Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗PULSED
R
DS(on)
1.2
−
−
−
−
−
−
−
−
−
−
Body diode characteristics (source-drain characteristics)
Forward voltage
VSD
−
−
−1.2
V
I
S
=−0.9A,
V
GS
=0V
2/4
RSQ025P03
Transistor
Electrical characteristic curves
10
Drain Current :
−I
D
(A)
1
Ta=125°C
75°C
25°C
−25°C
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
V
DS
=−10V
pulsed
1000
Ta=25 C
pulsed
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
1000
V
GS
=−10V
pulsed
V
GS
=−4V
−4.0V
−10V
Ta=125
75
25
−25
C
C
C
C
0.1
100
100
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
0.1
1
10
10
0.1
1
10
Gate−Source Voltage
: −V
GS
[V]
Drain Current
: −I
D
[A]
Drain Current
: −I
D
[A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain−Source On−State
Resistance
vs.Drain Current
Fig.3 Static Drain−Source On−State
Resistance vs.Drain Current
1000
1000
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
Static Drain−Source On−State Resistance
R
DS
(on)[mΩ]
V
GS
=−4.5V
pulsed
Ta=125
75
25
−25
C
C
C
C
V
GS
=−4V
pulsed
10
V
GS
=0V
pulsed
Reverse Drain Current
: −I
DR
[A]
1
Ta=125 C
75 C
25 C
−25
C
100
100
Ta=125
75
25
−25
C
C
C
C
0.1
10
0.1
10
0.1
1
10
1
10
Drain Current
: −I
D
[A]
Drain Current
: −I
D
[A]
0.01
0
0.5
1.0
1.5
2.0
Fig.4 Static Drain−Source On−State
Resistance vs.Drain−Current
Fig.5 Static Drain−Source On−State
Resistance vs.Drain−Current
Source−Drain Voltage
: −V
SD
[V]
Fig.6 Reverse Drain Current
Source-Drain Voltage
10000
Ta=25 C
f=1MHz
V
GS
=0V
1000
Ta=25 C
V
DD
=−15V
V
GS
=−10V
R
G
=10Ω
Pulsed
8
7
Ta=25 C
V
DD
=−15V
I
D
=−2.5V
R
G
=10Ω
Pulsed
Gate-Source Voltage: -V
GS
[V]
Capacitance
:
C
[pF]
Switching Time
:
t
[ns]
6
5
4
3
2
1
1000
100
tf
td(off)
Ciss
100
Coss
Crss
10
0.01
0.1
1
10
100
10
td(on)
tr
1
0.01
0
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Drain−Source Voltage
: −V
DS
[V]
Drain Current
: −I
D
[A]
Total Gate Charge
:
Qg[nC]
Fig.7 Typical Capactitance
vs.Drain−Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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