MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4452M
440-520MHz 30W 12.5V MOBILE RADIO
BLOCK DIAGRAM
DESCRIPTION
The RA30H4452M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
• P
out
>30W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA30H4452M-E01
RA30H4452M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H4452M
MITSUBISHI ELECTRIC
1/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=440-520MHz,
Z
G
=Z
L
=50Ω
RATING
17
6
100
45
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
Above Parameters are guaranteed independently
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
MIN
440
30
TYP
MAX
520
UNIT
MHz
W
%
V
DD
=12.5V,
V
GG
=5V,
P
in
=50mW
40
-25
3:1
1
Harmonic
dBc
—
mA
—
—
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<40W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=30W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All Parameters, Conditions, Ratings and Limits are subject to change without notice
RA30H4452M
MITSUBISHI ELECTRIC
2/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
rd
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
P
out
2
nd
, 3 HARMONICS versus FREQUENCY
-20
100
TOTAL EFFICIENCY
η
T(%
)
-30
-40
-50
2
nd
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
OUTPUT POWER P
out
(W)
50
INPUT VSWR
ρ
in
(-)
40
30
20
10
η
T
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
80
60
40
20
HARMONICS (dBc)
3
rd
-60
-70
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
ρ
in
0
0
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
12
10
DRAIN CURRENT
I
DD
(A)
8
OUTPUT POWER P
out
(dBm)
60
Gp
12
P
out
POWER GAIN Gp(dB)
50
40
30
20
10
0
-10
-5
0
5
I
DD
10
8
6
4
DRAIN CURRENT
12
10
8
6
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT I
DD
(A)
4
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
I
DD
6
4
2
0
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
2
0
10
15
20
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER P
out
(dBm)
50
40
30
I
DD
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
12
OUTPUT POWER P
out
(dBm)
10
8
6
4
DRAIN CURRENT
I
DD
(A)
60
50
40
30
I
DD
Gp
P
out
POWER GAIN Gp(dB)
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
f=490MHz,
V
DD
=12.5V,
V
GG
=5V
POWER GAIN Gp(dB)
20
10
0
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
2
0
2
0
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
18
OUTPUT POWER P
out
(W)
16
DRAIN CURRENT I
DD
(A)
14
12
10
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
DRAIN VOLTAGE V
DD
(V)
14
16
I
DD
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
18
16
14
12
10
8
6
4
2
0
RA30H4452M
MITSUBISHI ELECTRIC
3/9
I
DD
(A)
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
DD
f=490MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
OUTPUT POWER P
out
(W)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V
DD
(V)
16
I
DD
18
16
DRAIN CURRENT I
DD
(A)
14
12
10
8
6
4
2
0
18
14
P
out
12
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=440MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
12
10
8
6
4
2
0
12
DRAIN CURRENT I
DD
(A)
DRAIN CURRENT I
DD
(A)
10
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=490MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
60
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
GATE VOLTAGE V
GG
(V)
5
I
DD
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
12
10
8
6
4
2
0
12
10
P
out
8
6
4
2
0
RA30H4452M
MITSUBISHI ELECTRIC
4/9
DRAIN CURRENT I
DD
(A)
f=520MHz,
V
DD
=12.5V,
V
GG
=5V
16
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
OUTLINE DRAWING
(mm)
66.0 ±0.5
3.0 ±0.3
7.25 ±0.8
60.0 ±0.5
51.5 ±0.5
2-R2 ±0.5
21.0 ±0.5
9.5 ±0.5
5
1
2
3
4
14.0 ±1
2.0 ±0.5
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(50.4)
2.3 ±0.3
4.0 ±0.3
(9.88)
17.0 ±0.5
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA30H4452M
MITSUBISHI ELECTRIC
5/9
2 Dec 2002
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