FLS0116 — MOSFET Integrated Smart LED Lamp Driver IC with PFC Function
April 2012
FLS0116
MOSFET Integrated Smart LED Lamp Driver IC with
PFC Function
Features
Built-in MOSFET(1A/550V)
Digitally Implemented Active-PFC Function
No Additional Circuit for Achieving High PF
Application Input Range: 80V
AC
~ 308V
AC
Built-In HV Supplying Circuit: Self Biasing
AOCP Function with Auto-Restart Mode
Built-In Over-Temperature Protection (OTP)
Cycle-by-Cycle Current Limit
Current Sense Pin Open Protection
Low Operating Current: 0.85mA (Typical)
Under-Voltage Lockout with 5V Hysteresis
Programmable Oscillation Frequency
Programmable LED Current
Analog Dimming Function
Soft-Start Function
Precise Internal Reference: ±3%
Description
The FLS0116 LED lamp driver is a simple IC with
integrated MOSFET and PFC function. The special
“adopted digital” technique automatically detects input
voltage condition and sends an internal reference signal
to achieve high power factor. When AC input is applied
to the IC, the PFC function is automatically enabled.
When DC input is applied to the IC, the PFC function is
automatically disabled. The FLS0116 does not need a
bulk (electrolytic) capacitor for supply rail stability, which
significantly improves LED lamp life.
Applications
LED Lamp for Decorative Lighting
LED Lamp for Low-Power Lighting Fixture
Figure 1. Typical Application
Ordering Information
Part Number
FLS0116MX
Operating
Temperature Range
-40°C to +125°C
Package
7-Lead, Small-Outline Integrated Circuit (SOIC),
JEDEC MS-012, .150-inch, Narrow Body
Packing Method
Tape & Reel
© 2012 Fairchild Semiconductor Corporation
FLS0116 • Rev. 1.0.0
www.fairchildsemi.com
FLS0116 — MOSFET Integrated Smart LED Lamp Driver IC with PFC Function
Block Diagram
VCC
2
VCC
ZCD
JFET
UVLO
time
7 HV
I
AD
ZCD
8 DRAIN
ADIM
5
DAC
Soft-Start
TSD
Digital Block
RT
4
Oscillator
-
Reference
R
S
Q
+
LEB
1 CS
-
+
2.5V
GND
3
FLS0116
Leading-Edge
Blanking
AOCP
Figure 2. Block Diagram
Pin Configuration
Figure 3. Pin Configuration
FLS0116
Pin Definitions
Pin #
1
2
3
4
5
7
8
Name
CS
VCC
GND
RT
ADIM
HV
DRAIN
Description
Current Sense.
Limits output current, depending on the sensing resistor voltage. The CS pin is
also used to set the LED current regulation.
VCC.
Supply pin for stable IC operation; ZCD signal detection used for accurate PFC function.
GROUND.
Ground for the IC
RT.
Programmable operating frequency using an external resistor; the IC has pre-fixed
frequency when this pin is open or floating.
Analog Dimming.
Connect to the internal current source. Use to change the output current
using an external resistor. If ADIM is not used, connect a 0.1µF bypass capacitor between the
ADIM and GND.
High Voltage.
Connect to the high-voltage line and supply current to the IC.
DRAIN.
The drain pin of internal MOSFET
© 2012 Fairchild Semiconductor Corporation
FLS0116 • Rev. 1.0.0
www.fairchildsemi.com
2
FLS0116 — MOSFET Integrated Smart LED Lamp Driver IC with PFC Function
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
V
CC
HV
DRAIN
V
ADIM
V
RT
V
CS
T
A
T
J
T
STG
θ
JA
P
D
ESD
IC Supply Voltage
High Voltage Sensing
Internal Drain Voltage
Analog Dimming
RT Pin Voltage
Parameter
Min.
Max.
20
550
550
5
5
5
Unit
V
V
V
V
V
V
°C
°C
°C
°C/W
mW
V
Allowable Current Sensing Detection Voltage
Operating Ambient Temperature Range
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance Junction-Air
(1,2)
Power Dissipation
Electrostatic Discharge Capability
Human Body Model, JESD22-A114
Charged Device Model, JESD22-C101
-40
-40
-65
+125
+150
+150
135
660
2000
1000
Notes:
1. Thermal resistance test board. Size: 76.2mm x 114.3mm x 1.6mm (1S0P); JEDEC standard: JESD51-2, JESD51-3.
2. Assume no ambient airflow.
© 2012 Fairchild Semiconductor Corporation
FLS0116 • Rev. 1.0.0
www.fairchildsemi.com
3
FLS0116 — MOSFET Integrated Smart LED Lamp Driver IC with PFC Function
Electrical Characteristics
Typical values are at T
A
= +25°C. Specifications to -40°C ~ 125°C are guaranteed by design based on final
characterization results.
Symbol
V
CC
Bias Section
V
CC
V
CCST+
V
CCST-
V
CCHYS
I
HV
I
ST
Parameter
V
CC
Regulator Output Voltage
UVLO Positive-Going Threshold
UVLO Negative-Going Threshold
UVLO Hysteresis
HV Pin Current
Startup Current
Condition
V
HV
=100V
DC
V
CC
Increasing
V
CC
Decreasing
V
HV
=100V
DC
, RT=Open
Min.
14.0
12
7
4
Typ.
15.5
13
8
5
0.85
120
Max.
17.0
14
9
6
1.2
150
Unit
V
V
V
V
mA
μA
Switching Section
R
T
=5.95kΩ
f
OSC
Operating Frequency
R
T
=87kΩ
R
T
Open
t
MIN
D
MAX
t
LEB
V
RT
Minimum On Time
(3)
Maximum Duty Cycle
Leading Edge Blanking Time
(3)
Voltage Reference of RT Pin
DC Mode
AC Mode
DC Mode
AC Mode
(3)
0.354
0.485
17.7
48
200
16
40.5
250
20
45.0
400
50
350
1.5
60
7
0.365
0.500
18.7
2.5
70
140
150
50
0.376
0.515
19.7
72
300
24
49.5
kHz
kHz
kHz
ns
%
ns
V
ms
Periods
Soft-Start Section
t
ss
Soft-Start Time
(3)
Reference Section
V
CS1
V
CS2
OVP
VCC
V
AOCP
t
AOCP
T
TSDH
T
TSDHY
Internal Reference Voltage of CS Pin
V
Protection Section
Over-Voltage Protection on VCC Pin
Abnormal OCP Level at CS Pin
(3)
Abnormal Detection Time
(3)
Thermal Shutdown Threshold
(3)
Thermal Shutdown Threshold
Hysteresis
(3)
V
V
ns
°C
°C
Dimming Section
Analog Dimming Positive Going
V
ADIM(ST+)
Threshold
(3)
Analog Dimming Negative Going
V
ADIM(ST-)
Threshold
(3)
I
AD
Internal Current Source for ADIM Pin
3.15
3.50
0.50
3.85
0.75
15
V
V
μA
9
12
Continued on the following page…
© 2012 Fairchild Semiconductor Corporation
FLS0116 • Rev. 1.0.0
www.fairchildsemi.com
4
FLS0116 — MOSFET Integrated Smart LED Lamp Driver IC with PFC Function
Electrical Characteristics
(Continued)
Typical values are at T
A
= +25°C. Specifications to -40°C ~ 125°C are guaranteed by design based on final
characterization results.
Symbol
MOSFET Section
BV
DSS
I
LKMOS
R
ON(ON)
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
Parameter
Breakdown Voltage
Internal MOSFET Leakage Current
Drain-Source On Resistance
(3)
Input Capacitance
(3)
Output Capacitance
(3)
Reverse Transfer Capacitance
(3)
Turn-On Delay
(3)
Rise Time
(3)
Turn-Off Delay
Fall Time
(3)
(3)
Condition
V
CC
=0V, I
D
=250μA
V
DS
=550V
DC
, V
GS
=0V
V
GS
=10V, V
DGS
=0V,
T
C
=25°C
V
GS
=0V,V
DS
=25V, f=1MHz
V
GS
=0V,V
DS
=25V, f=1MHz
V
GS
=0V,V
DS
=25V, f=1MHz
V
DD
=350V, I
D
=1A
V
DD
=350V, I
D
=1A
V
DD
=350V, I
D
=1A
V
DD
=350V, I
D
=1A
Min.
550
Typ.
Max.
Unit
V
250
7.3
135
21
3.2
10
13.4
14.9
36.8
10.0
μA
Ω
pF
pF
pF
ns
ns
ns
ns
Note:
3. These parameters, although guaranteed, are not 100% tested in production.
© 2012 Fairchild Semiconductor Corporation
FLS0116 • Rev. 1.0.0
www.fairchildsemi.com
5
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