TSOP341..LL1
Vishay Semiconductors
Photo Modules for PCM Remote Control Systems
Description
The TSOP341..LL1 - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefits are
the low supply voltage of 3 V and the compatibility to
all kind of data formats.
1
2
3
16644
Features
• Internal filter for PCM frequency
• Improved shielding against electrical field
disturbance
• TTL and CMOS compatibility
• Low supply voltage: 3 V
• Low power consumption
• High immunity against ambient light
• Enhanced data rate up to 4000 bit/s
• Operation with short short bursts possible
(≥ 6 cycles/burst)
Parts Table
Part
TSOP34130LL1
Carrier Frequency
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
e3
TSOP34133LL1
TSOP34136LL1
TSOP34137LL1
TSOP34138LL1
TSOP34140LL1
TSOP34156LL1
Block Diagram
Application Circuit
16833
3
30 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
1
OUT
Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
R
1
= 100
Ω
V
S
C
1
=
4.7 µF
R
2
>=
10 kΩ
+V
S
OUT
GND
µC
V
O
GND
2
Control Circuit
GND
R
1
+ C
1
recommended to suppress power supply
disturbances.
R
2
optional for improved pulse forming.
Document Number 82199
Rev. 1.1, 31-Jan-05
www.vishay.com
1
TSOP341..LL1
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
5 s, 1 mm from case
(Pin 3)
(Pin 3)
(Pin 1)
(Pin 1)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
- 0.3 to + 6.0
5
- 0.3 to + 6.0
5
100
- 25 to + 85
- 25 to + 85
50
260
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current
Test condition
V
S
= 3 V, E
v
= 0
V
S
= 3 V,
E
v
= 40 klx, sunlight
Supply Voltage
T
amb
= - 25 °C to + 85 °C
T
amb
= 0 °C to + 60 °C,
E
v
< 30 klx, sunlight
Transmission Distance
E
v
= 0, test signal see fig.1,
IR diode TSAL6200,
I
F
= 400 mA
I
OsL
= 0.5 mA,E
e
= 0.7 mW/m
2
Pulse width tolerance:
t
pi
- 4/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
Pulse width tolerance:
t
pi
- 4/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig.1
t
pi
- 4/f
o
< t
po
< t
pi
+ 6/f
o
Angle of half transmission
distance
Symbol
I
SD
I
SH
V
S
V
S
d
2.7
2.4
35
Min
0.8
Typ.
1.3
1.4
3.6
3.6
Max
1.5
Unit
mA
mA
V
V
m
Output Voltage Low (Pin 4)
Minimum Irradiance (30 - 40
kHz)
Minimum Irradiance (56 kHz)
V
OSL
E
e min
0.35
250
0.5
mV
mW/m
2
E
e min
0.4
0.6
mW/m
2
Maximum Irradiance
Directivity
E
e max
ϕ
1/2
30
±45
W/m
2
deg
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2
Document Number 82199
Rev. 1.1, 31-Jan-05
TSOP341..LL1
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
T
on
,T
off
– Output Pulse Width ( ms )
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
t
pi
*)
T
*) t
pi
w
6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
t
d1 )
1)
2)
t
14337
3/f
0
< t
d
< 9/f
0
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
t
t
po2 )
10.0
100.0 1000.010000.0
16910
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 4. Output Pulse Diagram
E
e
Optical Test Signal
1.0
E
e min
/ E
e
– Rel. Responsivity
0.8
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
0.6
94 8134
0.4
0.2
0.0
V
O
V
OH
V
OL
f = f
0
"5%
Df
( 3dB ) = f
0
/7
0.7
0.8
0.9
1.0
1.1
1.2
1.3
T
on
T
off
t
94 9102
f/f
0
– Relative Frequency
Figure 2. Output Function
Figure 5. Frequency Dependence of Responsivity
E
e min
–Threshold Irradiance (mW/m
2
)
0.35
t
po
– Output Pulse Width ( ms )
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.10
1.00
10.00
E – DC Irradiance (W/m
2
)
100.00
Ambient,
λ=
950 nm
Correlationwith ambient light sources
(Disturbance effect): 10W/m
2
≅1.4
klx
(Stand.illum.A, T = 2855 K)
≅8.2
klx
(Daylight,T= 5900K)
0.30
Output Pulse
0.25
0.20
0.15
0.10
0.05
0.00
0.1
l
= 950 nm,
optical test signal, fig.1
Input Burst Duration
1.0
10.0
100.0 1000.010000.0
16907
E
e
– Irradiance ( mW/m
2
)
96 121
11
Figure 3. Pulse Length and Sensitivity in Dark Ambient
Figure 6. Sensitivity in Bright Ambient
Document Number 82199
Rev. 1.1, 31-Jan-05
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3
TSOP341..LL1
Vishay Semiconductors
E
e min
– Threshold Irradiance ( mW/m
2
)
1.0
2.0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
16137
0.9
Envelope Duty Cycle
f(E) = f
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
10
20 30
40 50
60 70
80 90
T
amb
– Ambient Temperature ( °C )
94 8147
E – Field Strength of Disturbance ( kV/m )
Figure 7. Sensitivity vs. Electric Field Disturbances
Figure 10. Max. Envelope Duty Cycle vs. Burstlength
E
e min
–Threshold Irradiance( mW/m
2
)
10
f = f
0
1 kHz
S (
λ
)
rel
- Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
10 kHz
1
100 Hz
0.1
0.01
0.1
1
10
100
1000
16919
850
950
1050
1150
94 9106
∆V
sRMS–
AC Voltage on DC Supply Voltage (mV)
λ
- Wavelength ( nm )
Figure 8. Sensitivity vs. Supply Voltage Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
E
e min
– Threshold Irradiance (mW/m
2
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.6
96 12223p2
0
Sensitivity in dark ambient
10
20
30
40
1.0
0.9
0.8
0.7
50
60
70
80
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
0.0
–30 –15 0
15 30 45 60 75 90
96 121
12
T
amb
– Ambient Temperature (°C )
Figure 9. Sensitivity vs. Ambient Temperature
Figure 12. Directivity
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Document Number 82199
Rev. 1.1, 31-Jan-05
TSOP341..LL1
Vishay Semiconductors
Suitable Data Format
The circuit of the TSOP341..LL1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is neccessary.
• For each burst which is longer than 1.8ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP341..LL1 it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP341..LL1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last (an example of the signal modulation is in the fig-
ure below).
IR
Signal
IR
Signal
from fluorescent
lamp
with
low modulation
0
16920
5
10
Time
( ms )
15
20
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82199
Rev. 1.1, 31-Jan-05
www.vishay.com
5
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