Glass passivated triacs in a plastic TO220 package.
They are intended for use in applications requiring high
bidirectional transient and blocking voltage capability and
high thermal cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching
.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Value
BT139-500 BT139-600 BT139-800
V
DRM
V
RRM
I
T(RMS)
I
TSM
P
GM
PG
(AV)
T
stg
T
j
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
RMS on-state current
Non-repetitive peak on-state
current
Peak gate power
Average gate power
Storage temperature range
Operating junction
temperature
500
500
600
600
16
140
5
0.5
-45 to +150
110
800
V
800
A
A
W
W
°C
°C
Symbol
Ratings
Unit
THERMAL CHARACTERISTICS
Symbol
R
∂j-mb
R
∂JA
Ratings
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
Value
≤
1.2
≤
60
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
1|3
SEMICONDUCTORS
BT139 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DRM
V
RRM
Ratings
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Gate trigger current
Test Condition(s)
BT139-500
I
D
= 0.1 mA BT139-600
BT139-800
BT139-500
I
D
= 0.5 mA BT139-600
BT139-800
T2+ G+
V
D
= 12 V
T2+ G-
R
L
= 100
Ω
T2- G-
T2- G+
T2+ G+
V
D
= 12 V
T2+ G-
R
L
= 100
Ω
T2- G-
T2- G+
T2+ G+
T2+ G-
V
D
= 12 V
I
GT
= 100 mA T2- G-
T2- G+
I
T
= 200 mA, I
GT
= 50 mA
V
D
= V
DRM max
T
j
= 125°C
I
T
= 10 A
V
DM
= 67% V
DRMmax
T
j
= 125°C
Exponential waveform;
gate open circuit
V
D
= 400 V; T
j
= 95 °C
dI
com
/dt = 7.2 A/ms
I
T
= 16 A
gate open circuit
I
TM
= 20 A; V
D
= V
DRMmax
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
Min
500
600
800
500
600
800
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
Max
-
-
-
-
-
-
30
30
30
100
1.5
1.5
1.5
1.8
60
90
60
90
50
0.5
1.65
-
Unit
V
I
GT
mA
V
GT
Gate trigger voltage
V
I
L
I
H
I
D
V
T
dV
D
/dt
Latching current
Holding current
Off-state leakage current
On-state voltage
Critical rate of rise of
off-state voltage
Critical rate of rise of change
commutatating current
Gate controlled turn-on time
mA
mA
mA
V
V/µs
dV
COM
/dt
-
20
-
V/µs
t
gt
-
2
-
µs
26/09/2012
COMSET SEMICONDUCTORS
2|3
SEMICONDUCTORS
BT139 Series
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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