NPN power transistors in a TO-220 package. They are intended for high voltage, high speed power
switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V
SWITCHMODE applications such as switching regulator’s, inverters, motor controls, solenoid/relay
drivers and deflection circuits.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
T
t
J
t
s
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Peak Current (*)
Base Current
Base Peak Current (*)
Emitter Current
Emitter Peak Current (*)
Power Dissipation at Case Temperature
Junction Temperature
Storage Temperature range
Value
400
700
9
8
16
4
8
12
24
80
150
-65 to +150
Unit
V
V
V
A
A
A
A
A
A
W
°C
@ T
mb
< 25°
(*)Pulse Width =
5ms, duty cycle
<10%.
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.56
62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
1/3
SEMICONDUCTORS
MJE13007
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
I
CBO
Ratings
Collector-Emitter
Sustaining Voltage (*)
Collector- Cutoff Current
Test Condition(s)
I
C
= 10 mA, I
B
= 0
Min
400
-
-
-
-
-
-
-
-
-
-
8
5
4
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
80
Mx
-
0.1
1
0.1
1
2
3
13
1.2
1.6
1.5
40
30
-
-
Unit
V
mA
mA
V
T
C
= 25°C
V
CB
= 700 V
I
B
= 0
T
C
= 125°C
Emitter Cutoff Current
V
EB
= 9 V, I
C
= 0
I
EBO
I
C
= 2 A, I
B
= 400 mA
T
C
= 25°C
I
C
= 5 A
Collector-Emitter
V
CE(SAT)
I
B
= 1 A
T
C
= 100°C
saturation Voltage (*)
I
C
= 8 A, I
B
= 2 A
I
C
= 2 A, I
B
= 400 mA
Base-Emitter Saturation
T
C
= 25°C
V
BE(SAT)
I
C
= 5 A
Voltage (*)
I
B
= 1 A
T
C
= 100°C
Forward Current transfer V
CE
= 5.0 V, I
C
= 2 A
h
FE
ratio (*)
V
CE
= 5.0 V, I
C
= 5 A
Transition Frequency
V
CE
= 10 V, I
C
= 0.5 A, f= 1 MHz
f
T
Output Capacitance
I
E
= 0 ; V
CB
= 10 V ; f= 1 MHz
C
OB
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
V
-
MHz
pF
SWITCHING TIMES.
Symbol
t
d
t
r
t
s
t
f
.
Ratings
Delay Time
Rise time
Storage Time
Fall Time
Test Condition(s)
V
CC
= 125 V; I
C
= 5 A
I
B1
= -I
B2
= 1 mA
t
p
= 25 µs, duty cycle <1%.
Min
-
-
-
-
Typ
-
-
-
-
Max
0.1
1.5
3
0.7
Unit
µs
02/10/2012
COMSET SEMICONDUCTORS
2/3
SEMICONDUCTORS
MJE13007
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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