JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N6648/6649/6650
・
DARLINGTON
・
High DC current gain
APPLICATIONS
・Designed
for low and medium frequency
power application such as power switching
audio amplifer ,hammer drivers and shunt
and series regulators
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6383 2N6384 2N6385
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6383
V
CBO
Collector-base voltage
2N6384
2N6385
2N6383
V
CEO
Collector-emitter voltage
2N6384
2N6385
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
10
15
0.25
100
200
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
UNIT
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2N6383 2N6384 2N6385
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6383
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6384
2N6385
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
2N6383
I
CEO
Collector cut-off current
2N6384
2N6385
2N6383
I
CEX
Collector cut-off current
2N6384
2N6385
I
EBO
h
FE-1
h
FE-2
C
OB
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
I
C
=5A; I
B
=10mA
I
C
=10A ;I
B
=100mA
I
C
=5A ; V
CE
=3V
I
C
=10A ; V
CE
=3V
V
CE
=40V; I
B
=0
V
CE
=60V; I
B
=0
V
CE
=80V; I
B
=0
V
CE
=40V; V
BE
=-1.5V
T
C
=125℃
V
CE
=60V; V
BE
=-1.5V
T
C
=125℃
V
CE
=80V; V
BE
=-1.5V
T
C
=125℃
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=3V
I
C
=10A ; V
CE
=3V
I
E
=0; V
CB
=10V;f=1MHz
1000
100
200
pF
0.3
3.0
0.3
3.0
0.3
3.0
10
20000
mA
mA
1.0
mA
I
C
=0.2A ;I
B
=0
CONDITIONS
MIN
40
60
80
2.0
3.0
2.8
4.5
V
V
V
V
V
TYP.
MAX
UNIT
2