JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-66 package
・Low
collector saturation voltage
・Excellent
safe operating area
APPLICATIONS
・Designed
for switching and wide-band
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6372 2N6373 2N6374
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6372
V
CBO
Collector-base voltage
2N6373
2N6374
2N6372
V
CEO
Collector-emitter voltage
2N6373
2N6374
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
90
70
50
80
60
40
6
6
40
150
-65~200
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6372
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6373
2N6374
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
2N6372
I
CEO
Collector cut-off current
2N6373
2N6374
I
CBO
I
EBO
Collector cut-off current
Emitter cut-off current
2N6372
h
FE
DC current gain
2N6373
2N6374
f
T
Transition frequency
I
C
=2A; I
B
=0.2A
I
C
=6A; I
B
=0.6A
I
C
=2A; I
B
=0.2A
I
C
=6A; I
B
=0.6A
V
CE
=80V; I
B
=0
V
CE
=60V; I
B
=0
V
CE
=40V; I
B
=0
V
CB
=Rated V
CB
; I
E
=0
V
EB
=6V; I
C
=0
I
C
=2A ; V
CE
=2V
I
C
=2.5A ; V
CE
=2V
I
C
=3A ; V
CE
=2V
I
C
=0.1A ;I
B
=0
2N6372 2N6373 2N6374
CONDITIONS
MIN
80
60
40
TYP.
MAX
UNIT
V
0.7
1.2
1.2
2.0
V
V
V
V
0.1
mA
10
0.1
μA
mA
20
100
I
C
=0.5A;V
CE
=10V;f=1MHz
4
MHz
2
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