TF8A60
Standard Triac
Symbol
○
TO-220F
2.T2
V
DRM
= 600V
I
T(RMS)
= 8 A
▼
▲
○
3.Gate
1.T1
○
I
TSM
= 84A
1
2
3
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
=
8
A )
◆
High Commutation dv/dt
◆
General Description
This device is fully isolated p ackage suitable for AC switching app lication, phase control application
such as fan speed and temperature modulation control, lighting control and static switching relay.
This device may substitute for BTA08-600, BTB08-600, BT137-600, BCR8PM-12, TM861M/S series.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
G(AV)
I
GM
T
J
T
STG
( Tj = 25°C unless otherwise specified )
Condition
Since wave, 50 to 60Hz
T
j
=
125°C
, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Average Gate Power Dissipation
Peak Gate Current
Operating Junction Temperature
Storage Temperature
Ratings
600
8
.0
80/84
32
1
2
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
2
s
W
A
°C
°C
tp
=
10ms
Tj=125 °C
Tj=125 °C
J u l y,
2010. Rev.2
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/6
TF8A60
Electrical Characteristics
(Tj=25 °C unless otherwise specified)
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Holding Current
Tj= 125 °C, V
D
= V
DRM,
RL=3.3K Ω
T
j
= 125 °C,
V
D
=2/3 V
DRM
I
T
=0.2A
Gate Trigger Voltage
V
D
=12 V, R
L
=30
Ω
Gate Trigger Current
V
D
=
12
V, R
L
=30
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
j
= 125 °C
I
TM
= 11 A,
T
P
=380㎲
Ratings
Min.
─
---
─
─
─
─
─
─
0.2
Typ.
─
─
─
─
─
─
─
─
---
Max.
2
1.55
30
30
30
1.5
1.5
1.5
─
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
dv/dt
I
H
mA
V
mA
V
V
200
--
--
--
--
50
V/㎲
mA
2/6
TF8A60
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
V
GM
(10V)
On-State Current [A]
Gate Voltage [V]
P
GM
(5W)
P
G(AV)
(1W)
25
℃
10
10
1
T
J
= 125 C
o
I
GM
(2A)
0
T
J
= 25 C
10
0
o
10
-1
V
GD
(0.2V)
1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
10
9
Fig 4. On State Current vs.
Allowable Case Temperature
o
Power Dissipation [W]
8
7
6
5
4
3
2
1
0
0
1
π
θ
360°
θ
2
π
Allowable Case Temperature [
o
C]
θ
= 180
o
θ
= 150
o
θ
= 120
θ
= 90
θ
= 60
o
o
130
120
θ
: Conduction Angle
110
θ
= 30
100
o
o
θ
= 30
o
π
θ
360°
θ
2
π
90
θ
: Conduction Angle
θ
= 60
o
θ
= 90
o
θ
= 120
o
θ
= 150
o
θ
= 180
5
6
7
8
9
10
80
2
RMS On-State Current [A]
3
4
5
6
7
8
9
10
0
1
2
3
4
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
100
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
80
60Hz
V
V
GT
(25 C)
V
GT
(t C)
V
1
o
60
+
GT1
_
GT1
_
GT3
V
40
50Hz
20
o
0
0
10
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/6
TF8A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I
I
+
GT1
_
GT1
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
o
1
I
0.1
-50
_
GT3
0
50
100
o
150
0.1
-2
10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
4/6
TF8A60
TO-220F Package Dimension
Sym bol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MIN
9.88
15.30
2.95
10.30
0.95
1.81
0.50
3.00
4.35
6.20
0.41
2.30
2.53
2.34
IN C H ES
TYP
10.08
15.50
3.00
10.50
1.08
1.84
0.70
3.20
4.45
6.40
0.51
2.50
2.73
2.54
MAX
10.28
15.70
3.05
10.70
1.20
1.87
0.90
3.40
4.55
6.60
0.61
2.70
2.93
2.74
25.10
38.86
7.49
26.16
2.41
4.60
1.27
7.62
11.05
15.75
1.03
5.84
6.43
5.94
MILLIMETER S
MIN
25.60
39.37
7.62
26.67
2.74
4.67
1.78
8.13
11.30
16.26
1.28
6.35
6.93
6.45
TYP
26.11
39.88
7.75
27.18
3.05
4.75
2.29
8.64
11.56
16.76
1.54
6.86
7.44
6.96
5/6
单片机
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